scholarly journals Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime

2021 ◽  
Vol 24 (1) ◽  
pp. 16-21
Author(s):  
A. Latreche ◽  
Keyword(s):  
Schottky Barrier ◽  
Field Emission ◽  
Image Force ◽  
Theoretical Work ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Emission Models ◽  
Current Densities ◽  
Relationship Of

In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.

1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes

2015 ◽  
Vol 14 (03) ◽  
pp. 1550029 ◽  
Author(s):  
Alexey V. Klyuev ◽  
Arkady V. Yakimov ◽  
Irene S. Zhukova
Keyword(s):  
Schottky Barrier ◽  
Field Emission ◽  
Thermionic Emission ◽  
Low Frequency ◽  
Schottky Barrier Diodes ◽  
Transport Mechanisms ◽  
Current Dependence ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Multiple Charge

We have studied the forward current–voltage (I–V) characteristics of Ti–Au /n-type GaAs Schottky barrier diodes. However, we found some anomalies in I–V characteristics. Hence, we have considered a model that incorporates thermionic emission, thermionic-field emission and leakage components. Leakage component is linear and visible at rather small currents. The anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the diodes. It is shown that thermionic-field emission and leakage are the sources of low-frequency (1/f) noise in such type of diodes. Various Schottky diode parameters were also extracted from the I–V characteristics and current dependence of spectrum of 1/f voltage noise.

Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling

2006 ◽  
Vol 15 (11-12) ◽  
pp. 1949-1953 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Norio Tokuda ◽  
Masahiko Ogura ◽  
Sung-Gi Ri ◽  
Shin-ichi Shikata
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Field Emission ◽  
Schottky Barrier Diodes ◽  
Thermionic Field Emission ◽  
Emission Modeling

Current/voltage characteristics of ion beam synthesised CoSi2/Si Schottky barrier diodes

1992 ◽  
Vol 28 (3) ◽  
pp. 296 ◽  
Author(s):  
R.S. Spraggs ◽  
G. Pananakakis ◽  
D. Bauza ◽  
K.J. Reeson ◽  
B.J. Sealy
Keyword(s):  
Schottky Barrier ◽  
Ion Beam ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Current Voltage Characteristics

Simulation and analysis of the current–voltage–temperature characteristics of Al/Ti/4H-SiC Schottky barrier diodes

2019 ◽  
Vol 58 (1) ◽  
pp. 014002 ◽  
Author(s):  
Kamal Zeghdar ◽  
Lakhdar Dehimi ◽  
Fortunato Pezzimenti ◽  
Sandro Rao ◽  
Francesco G. Della Corte
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Temperature Characteristics ◽  
Current Voltage
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