Tunneling Current Due to Thermionic-Field Emission in an Au–InS Schottky-Barrier Diode

1979 ◽  
Vol 18 (1) ◽  
pp. 107-112 ◽  
Author(s):  
Kenichi Takarabe ◽  
Taneo Nishino ◽  
Yoshihiro Hamakawa
Keyword(s):  
Schottky Barrier ◽  
Field Emission ◽  
Tunneling Current ◽  
Schottky Barrier Diode ◽  
Thermionic Field Emission

scholarly journals Modified expressions of field and thermionic-field emission for Schottky barrier diodes in the reverse regime

2021 ◽  
Vol 24 (1) ◽  
pp. 16-21
Author(s):  
A. Latreche ◽  
Keyword(s):  
Schottky Barrier ◽  
Field Emission ◽  
Image Force ◽  
Theoretical Work ◽  
Schottky Barrier Diodes ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Emission Models ◽  
Current Densities ◽  
Relationship Of

In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.

scholarly journals A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer

Micromachines ◽  
2019 ◽  
Vol 10 (2) ◽  
pp. 91 ◽  
Author(s):  
Youlei Sun ◽  
Ying Wang ◽  
Jianxiang Tang ◽  
Wenju Wang ◽  
Yifei Huang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Buffer Layer ◽  
Computer Aided Design ◽  
Tunneling Current ◽  
Cathode Region ◽  
Schottky Barrier Diode ◽  
Electrical Characteristics ◽  
Edge Termination ◽  
Dimensional Electron Gas ◽  
Aided Design

In this paper, an AlGaN/GaN Schottky barrier diode (SBD) with the T-anode located deep into the bottom buffer layer in combination with field plates (TAI-BBF FPs SBD) is proposed. The electrical characteristics of the proposed structure and the conventional AlGaN/GaN SBD with gated edge termination (GET SBD) were simulated and compared using a Technology Computer Aided Design (TCAD) tool. The results proved that the breakdown voltage (VBK) in the proposed structure was tremendously improved when compared to the GET SBD. This enhancement is attributed to the suppression of the anode tunneling current by the T-anode and the redistribution of the electric field in the anode–cathode region induced by the field plates (FPs). Moreover, the T-anode had a negligible effect on the two-dimensional electron gas (2DEG) in the channel layer, so there is no deterioration in the forward characteristics. After being optimized, the proposed structure exhibited a low turn-on voltage (VT) of 0.53 V and a specific on-resistance (RON,sp) of 0.32 mΩ·cm2, which was similar to the GET SBD. Meanwhile, the TAI-BBF FP SBD with an anode-cathode spacing of 5 μm achieved a VBK of 1252 V, which was enhanced almost six times compared to the GET SBD with a VBK of 213 V.

Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling

2006 ◽  
Vol 15 (11-12) ◽  
pp. 1949-1953 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Norio Tokuda ◽  
Masahiko Ogura ◽  
Sung-Gi Ri ◽  
Shin-ichi Shikata
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Field Emission ◽  
Schottky Barrier Diodes ◽  
Thermionic Field Emission ◽  
Emission Modeling

Thermionic Field Emission Transport at Nanowire Schottky Barrier Contacts

2015 ◽  
Vol 1785 ◽  
pp. 19-25
Author(s):  
Kan Xie ◽  
Steven Allen Hartz ◽  
Virginia M. Ayres
Keyword(s):  
Dielectric Constant ◽  
Schottky Barrier ◽  
Effective Mass ◽  
Field Emission ◽  
Relative Dielectric Constant ◽  
Semiconductor Nanowires ◽  
Materials Properties ◽  
Thermionic Field Emission ◽  
High Carrier ◽  
General Method

ABSTRACTThe high carrier concentrations typically reported for nanowire devices indicate that when Schottky barrier transport is present, it occurs in the thermionic field emission regime with a substantial but not exclusive tunneling component. Analysis by thermionic field emission is difficult due to its multivariate nature. In recent work, we developed a mathematical stability approach that greatly simplified the evaluation of the multivariate thermionic field emission parameters. This is a general method with potentially wide applicability, requiring only the effective mass m* and relative dielectric constant εr for a given semiconductor as inputs. In the present work, we investigate the influence of the materials properties effective mass m* and relative dielectric constant εr on stability for a range of real and simulated semiconductor nanowires. A further investigation of temperature sensitivity and regime trends is presented.

1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes

2015 ◽  
Vol 14 (03) ◽  
pp. 1550029 ◽  
Author(s):  
Alexey V. Klyuev ◽  
Arkady V. Yakimov ◽  
Irene S. Zhukova
Keyword(s):  
Schottky Barrier ◽  
Field Emission ◽  
Thermionic Emission ◽  
Low Frequency ◽  
Schottky Barrier Diodes ◽  
Transport Mechanisms ◽  
Current Dependence ◽  
Current Voltage ◽  
Thermionic Field Emission ◽  
Multiple Charge

We have studied the forward current–voltage (I–V) characteristics of Ti–Au /n-type GaAs Schottky barrier diodes. However, we found some anomalies in I–V characteristics. Hence, we have considered a model that incorporates thermionic emission, thermionic-field emission and leakage components. Leakage component is linear and visible at rather small currents. The anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the diodes. It is shown that thermionic-field emission and leakage are the sources of low-frequency (1/f) noise in such type of diodes. Various Schottky diode parameters were also extracted from the I–V characteristics and current dependence of spectrum of 1/f voltage noise.

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