Characterization of leakage current on diamond Schottky barrier diodes using thermionic-field emission modeling

In this theoretical work, the author has modified the current-voltage relationship of the field and thermionic–field emission models developed by Padovani and Stratton for the Schottky barrier diodes in the reverse bias conditions with account of the image force correction. Considered in this approach has been the shape of Schottky barrier as trapezoidal. The obtained results show a good agreement between current densities calculated within the framework of these developed models and those calculated using the general model.

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1/f Noise in Ti–Au/n-Type GaAs Schottky Barrier Diodes

Fluctuation and Noise Letters ◽

10.1142/s0219477515500297 ◽

2015 ◽

Vol 14 (03) ◽

pp. 1550029 ◽

Cited By ~ 6

Author(s):

Alexey V. Klyuev ◽

Arkady V. Yakimov ◽

Irene S. Zhukova

Keyword(s):

Schottky Barrier ◽

Field Emission ◽

Thermionic Emission ◽

Low Frequency ◽

Schottky Barrier Diodes ◽

Transport Mechanisms ◽

Current Dependence ◽

Current Voltage ◽

Thermionic Field Emission ◽

Multiple Charge

We have studied the forward current–voltage (I–V) characteristics of Ti–Au /n-type GaAs Schottky barrier diodes. However, we found some anomalies in I–V characteristics. Hence, we have considered a model that incorporates thermionic emission, thermionic-field emission and leakage components. Leakage component is linear and visible at rather small currents. The anomalies observed in the diode parameters were effectively construed in terms of the contribution of these multiple charge transport mechanisms across the interface of the diodes. It is shown that thermionic-field emission and leakage are the sources of low-frequency (1/f) noise in such type of diodes. Various Schottky diode parameters were also extracted from the I–V characteristics and current dependence of spectrum of 1/f voltage noise.

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The Impact of Chemical-Mechanical Polishing on Defective 4H-SiC Schottky Barrier Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.827 ◽

2008 ◽

Vol 600-603 ◽

pp. 827-830

Author(s):

Kung Yen Lee ◽

Wen Zhou Chen ◽

Michael A. Capano

Keyword(s):

Schottky Barrier ◽

Barrier Height ◽

Leakage Current ◽

Electric Fields ◽

Chemical Mechanical Polishing ◽

Mechanical Polishing ◽

Schottky Barrier Diodes ◽

Morphological Defects ◽

Thermionic Field Emission ◽

The Impact

In this article, the correlation of surface morphological defects and barrier-height inhomogeneities with the electrical characteristics of defective 4H-SiC Schottky barrier diodes (SBDs) before and after chemical-mechanical polishing (CMP) is investigated. The forward characteristics, an ideality factor and a single barrier height of a SBD, remain the same after CMP, so that CMP does not affect SBD characteristics. Most barrier-height inhomogeneities are eliminated or improved after CMP. Therefore, leakage current induced by barrier-height inhomogeneities are improved by CMP as well. In addition, about 40% of SBDs with carrots inside the active areas exhibits double barriers before CMP. This excludes that carrots are a cause of barrier-height inhomogeneities. In reverse-bias mode, CMP reduces reverse leakage current at low bias and increases breakdown voltage due to the reduction of thermionic field emission and elimination of local enhanced electric fields.

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Stacking faults: Origin of leakage current in halide vapor phase epitaxial (001) β-Ga2O3 Schottky barrier diodes

Applied Physics Letters ◽

10.1063/5.0049761 ◽

2021 ◽

Vol 118 (17) ◽

pp. 172106

Author(s):

Sayleap Sdoeung ◽

Kohei Sasaki ◽

Satoshi Masuya ◽

Katsumi Kawasaki ◽

Jun Hirabayashi ◽

...

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Vapor Phase ◽

Stacking Faults ◽

Schottky Barrier Diodes

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Epitaxial Growth and Characterization of 4H-SiC(11–20) and (03–38)

MRS Proceedings ◽

10.1557/proc-742-k1.1 ◽

2002 ◽

Vol 742 ◽

Cited By ~ 1

Author(s):

T. Kimoto ◽

K. Hashimoto ◽

K. Fujihira ◽

K. Danno ◽

S. Nakamura ◽

...

Keyword(s):

Epitaxial Growth ◽

Schottky Barrier ◽

Breakdown Voltage ◽

Doping Concentration ◽

Schottky Barrier Diodes ◽

Homoepitaxial Growth ◽

Nitrogen Incorporation ◽

Impurity Doping ◽

Background Doping

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

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Influence of Epi-Layer Growth Pits on SiC Device Characteristics

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.177 ◽

2015 ◽

Vol 821-823 ◽

pp. 177-180 ◽

Cited By ~ 4

Author(s):

Chiaki Kudou ◽

Hirokuni Asamizu ◽

Kentaro Tamura ◽

Johji Nishio ◽

Keiko Masumoto ◽

...

Keyword(s):

Metal Oxide ◽

Schottky Barrier ◽

Leakage Current ◽

Dielectric Breakdown ◽

Layer Growth ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Constant Current ◽

Schottky Barrier Diodes ◽

Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

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Large-size (1.7 × 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio

Applied Physics Express ◽

10.35848/1882-0786/ac4080 ◽

2021 ◽

Vol 15 (1) ◽

pp. 016501

Author(s):

Fumio Otsuka ◽

Hironobu Miyamoto ◽

Akio Takatsuka ◽

Shinji Kunori ◽

Kohei Sasaki ◽

...

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Schottky Barrier Diodes ◽

Wafer Level ◽

Current Ratio ◽

Field Plate ◽

Low Leakage ◽

Large Size ◽

Forward Current ◽

Low Leakage Current

Abstract We fabricated high forward and low leakage current trench MOS-type Schottky barrier diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown by halide vapor phase epitaxy on β-Ga2O3 (001) substrate. The MOSSBDs, measuring 1.7 × 1.7 mm2, exhibited a forward current of 2 A (70 A cm−2) at 2 V forward voltage and a leakage current of 5.7 × 10–10 A at −1.2 kV reverse voltage (on/off current ratio of > 109) with an ideality factor of 1.05 and wafer-level specific on-resistance of 17.1 mΩ · cm2.

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