Traction Inverter that Applies Hybrid Module Using 3kV SiC-SBDs and High-speed Drive Circuit

2015 ◽  
Vol 135 (5) ◽  
pp. 531-538 ◽  
Author(s):  
Katsumi Ishikawa ◽  
Kazutoshi Ogawa ◽  
Masahiro Nagasu
Keyword(s):  
High Speed ◽  
Hybrid Module ◽  
Drive Circuit

Traction Inverter that Applies Hybrid Module Using 3-kV SiC-SBDs and High-Speed Drive Circuit

2016 ◽  
Vol 196 (4) ◽  
pp. 50-59 ◽  
Author(s):  
KATSUMI ISHIKAWA ◽  
KAZUTOSHI OGAWA ◽  
MASAHIRO NAGASU
Keyword(s):  
High Speed ◽  
Hybrid Module ◽  
Drive Circuit

Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit

2010 ◽  
Vol 645-648 ◽  
pp. 1127-1130 ◽  
Author(s):  
Katsumi Ishikawa ◽  
Kazutoshi Ogawa ◽  
Norihumi Kameshiro ◽  
Hidekatsu Onose ◽  
Masahiro Nagasu
Keyword(s):  
Energy Loss ◽  
Power Loss ◽  
High Speed ◽  
Loss Reduction ◽  
Forward Voltage ◽  
Turn On ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Hybrid Module ◽  
Drive Circuit

We developed a JBS diode with characteristics of a low forward voltage and a low leakage current at 3kV. Further, we built a prototype of a 3kV/200A hybrid module, equipped with Si-IGBTs and SiC-JBS diodes. We attempted to decrease the recovery loss, and the decrease in the turn-on power loss, by using a hybrid module and a high-speed drive circuit. Moreover, we estimated that the total energy loss of the converter and the inverter were reduced to about 33%.

scholarly journals High-speed gate drive circuit for SiC MOSFET by GaN HEMT

2015 ◽  
Vol 12 (11) ◽  
pp. 20150285-20150285 ◽  
Author(s):  
Kohei Nagaoka ◽  
Kentaro Chikamatsu ◽  
Atsushi Yamaguchi ◽  
Ken Nakahara ◽  
Takashi Hikihara
Keyword(s):  
High Speed ◽  
Gan Hemt ◽  
Drive Circuit

scholarly journals Investigation Into the Nonlinear Characteristics of a High-Speed Drive Circuit for a Proportional Solenoid Controlled by a PWM Signal

IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 61665-61676 ◽  
Author(s):  
Junhui Zhang ◽  
Zhengyu Lu ◽  
Bing Xu ◽  
Qi Su ◽  
Di Wang ◽  
...  
Keyword(s):  
High Speed ◽  
Nonlinear Characteristics ◽  
Drive Circuit

High-Speed Drive Circuit with Separate Source Terminal for 600 V / 40 A Normally-off SiC-JFET

2013 ◽  
Vol 740-742 ◽  
pp. 1060-1064 ◽  
Author(s):  
Katsumi Ishikawa ◽  
Kaoru Katoh ◽  
Ayumu Hatanaka ◽  
Kazutoshi Ogawa ◽  
Haruka Shimizu ◽  
...  
Keyword(s):  
Power Supply ◽  
High Speed ◽  
Energy Losses ◽  
Common Source ◽  
Switching Loss ◽  
Turn On ◽  
Speed Up ◽  
Separate Source ◽  
Drive Circuit ◽  
Efficient Power

When using JFETs with a threshold voltage lower than 2 V in a power supply system or inverter system, a high-speed drive circuit capable of precisely controlling the gate current and a mounting method are important to reduce the switching loss. In this paper, a drive circuit of a normally-off SiC-JFET with a separate source terminal is proposed and the effects are evaluated. By dividing the common source inductance and applying the speed-up capacitor, the turn-on time and turn-on energy losses can be decreased by 40% and 60%, respectively. A speed-up capacitor larger than 100 nF greatly decreases the rising time (tr) and turn-on energy losses. By applying the developed normally-off SiC-JFETs and proposed gate driver to PFC circuits and DC/DC circuits, a highly efficient power supply will be achieved.

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