High-Speed Drive Circuit with Separate Source Terminal for 600 V / 40 A Normally-off SiC-JFET

2013 ◽  
Vol 740-742 ◽  
pp. 1060-1064 ◽  
Author(s):  
Katsumi Ishikawa ◽  
Kaoru Katoh ◽  
Ayumu Hatanaka ◽  
Kazutoshi Ogawa ◽  
Haruka Shimizu ◽  
...  
Keyword(s):  
Power Supply ◽  
High Speed ◽  
Energy Losses ◽  
Common Source ◽  
Switching Loss ◽  
Turn On ◽  
Speed Up ◽  
Separate Source ◽  
Drive Circuit ◽  
Efficient Power

When using JFETs with a threshold voltage lower than 2 V in a power supply system or inverter system, a high-speed drive circuit capable of precisely controlling the gate current and a mounting method are important to reduce the switching loss. In this paper, a drive circuit of a normally-off SiC-JFET with a separate source terminal is proposed and the effects are evaluated. By dividing the common source inductance and applying the speed-up capacitor, the turn-on time and turn-on energy losses can be decreased by 40% and 60%, respectively. A speed-up capacitor larger than 100 nF greatly decreases the rising time (tr) and turn-on energy losses. By applying the developed normally-off SiC-JFETs and proposed gate driver to PFC circuits and DC/DC circuits, a highly efficient power supply will be achieved.

Temperature Dependence of dV/dt Impact on the SiC-MOSFET

2019 ◽  
Vol 963 ◽  
pp. 596-599
Author(s):  
Shuhei Nakata ◽  
Shota Tanaka
Keyword(s):  
Temperature Dependence ◽  
High Speed ◽  
The Self ◽  
Power Device ◽  
Gate Bias ◽  
Switching Loss ◽  
Drain Voltage ◽  
Switching Circuits ◽  
Turn On ◽  
High Speed Switching

Recentlly, high speed switching circuits using SiC power device have been developed for reduction of switching loss and downsizing of electric products. The high speed switching leads to the rapid changing of the drain voltage (dV/dt) during the switching period. This paper reports the effects of the dV/dt impact on the self-turn-on and the characteristics of SiC-MOSFET, especially the temperature dependence. The results shows that the gate bias voltage to suppress the self-turn-on is negatively correlated with the temperature. And it is also found that the dV/dt impact breaks down the gate source insulation and the dV/dt value to the breakdown is positively correlated with the temperature.

Inverter Loss Reduction Using 3kV SiC-JBS Diode and High-Speed Drive Circuit

2010 ◽  
Vol 645-648 ◽  
pp. 1127-1130 ◽  
Author(s):  
Katsumi Ishikawa ◽  
Kazutoshi Ogawa ◽  
Norihumi Kameshiro ◽  
Hidekatsu Onose ◽  
Masahiro Nagasu
Keyword(s):  
Energy Loss ◽  
Power Loss ◽  
High Speed ◽  
Loss Reduction ◽  
Forward Voltage ◽  
Turn On ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Hybrid Module ◽  
Drive Circuit

We developed a JBS diode with characteristics of a low forward voltage and a low leakage current at 3kV. Further, we built a prototype of a 3kV/200A hybrid module, equipped with Si-IGBTs and SiC-JBS diodes. We attempted to decrease the recovery loss, and the decrease in the turn-on power loss, by using a hybrid module and a high-speed drive circuit. Moreover, we estimated that the total energy loss of the converter and the inverter were reduced to about 33%.

Scanning x-ray fluorescence microscopy and principal component analysis

1992 ◽  
Vol 50 (2) ◽  
pp. 1752-1753
Author(s):  
Brian Cross
Keyword(s):  
Principal Component Analysis ◽  
Fluorescence Microscopy ◽  
Spatial Resolution ◽  
High Speed ◽  
Image Acquisition ◽  
Principal Component ◽  
Fluorescence Microscope ◽  
Acquisition Rate ◽  
X Ray ◽  
Speed Up

A relatively new entry, in the field of microscopy, is the Scanning X-Ray Fluorescence Microscope (SXRFM). Using this type of instrument (e.g. Kevex Omicron X-ray Microprobe), one can obtain multiple elemental x-ray images, from the analysis of materials which show heterogeneity. The SXRFM obtains images by collimating an x-ray beam (e.g. 100 μm diameter), and then scanning the sample with a high-speed x-y stage. To speed up the image acquisition, data is acquired "on-the-fly" by slew-scanning the stage along the x-axis, like a TV or SEM scan. To reduce the overhead from "fly-back," the images can be acquired by bi-directional scanning of the x-axis. This results in very little overhead with the re-positioning of the sample stage. The image acquisition rate is dominated by the x-ray acquisition rate. Therefore, the total x-ray image acquisition rate, using the SXRFM, is very comparable to an SEM. Although the x-ray spatial resolution of the SXRFM is worse than an SEM (say 100 vs. 2 μm), there are several other advantages.

Ensuring electrical safety of power supply systems of electrified AC railways for highspeed lines

2018 ◽  
Vol 77 (6) ◽  
pp. 337-346 ◽  
Author(s):  
A. B. Kosarev ◽  
A. V. Barch ◽  
E. N. Rozenberg
Keyword(s):  
Power Supply ◽  
High Speed ◽  
Structural Features ◽  
Electrical Safety ◽  
Safe Operation ◽  
Ballastless Track ◽  
Conventional Structure ◽  
Artificial Earth ◽  
Earth Connection ◽  
Supply Systems

Abstract. High-speed railways are fast-growing and promising type of traffic. In Russia development of high-speed railway service is associated with the solution of a number of problems, including infrastructure. Authors propose to use earth connection of the railway catenary with the help of an artificial earthing switch on currently designed high-speed line Moscow—Kazan for 2×25 kV power supply system. Taking into account requirements for electrical safety conditions for maintenance of the track and earthed catenary supports, paper justifies method for calculating allowable voltages of rail—earth points and supports of catenary. Methods takes into account structural features of ballastless track superstructure used for high-speed lines. It is estimated that the voltages admissible under the electrical safety conditions are random in nature and distributed logarithmically normal. When calculating probability of safe operation, one should take into account random nature of both permissible stresses and those actually occurring on the track. It is estimated that the probability of safe operation in traction networks of sections with ballastless track superstructure does not exceed a similar value in electrified sections with the conventional structure of a ballast prism. Feasibility of using a 2×25 kV earth system using an artificial earth connection is confirmed, recommendations on its use are given. Authors substantiate allowable values of the rail—earth voltage and catenary supports, which practically exclude the occurrence of hazardous situations for personnel maintaining the track in sections with ballastless track superstructure.

Reosquido Desalinasi Metode Evaporasi dengan Ultraviolet Berbasis Mikrokontroller

2018 ◽  
Vol 3 (2) ◽  
pp. 38-47
Author(s):  
Muhammad Abdul Azis ◽  
Nuryake Fajaryati
Keyword(s):  
Temperature Measurement ◽  
Fresh Water ◽  
Sea Water ◽  
Evaporation Process ◽  
Heater Element ◽  
The Third ◽  
Turn On ◽  
Speed Up ◽  
Arduino Uno

This research aims to create a Reosquido desalination tool for evaporation methods using a microcontroller. This tool can control the temperature to speed up the evaporation process in producing fresh water. The method applied to Reosquido desalination uses Evaporation. The first process before evaporation is the detection of temperature in sea water that will be heated using an element heater. The second process of temperature measurement is to turn off and turn on the Arduino Uno controlled heater, when the temperature is less than 80 ° then the heater is on. The third process is evaporation during temperatures between 80 ° to 100 °, evaporation water sticks to the glass roof which is designed by pyramid. Evaporated water that flows into the reservoir is detected by its solubility TDS value. The fourth process is heater off when the temperature is more than 100 °. Based on the results of the testing, the desalination process using a microcontroller controlled heater can speed up the time up to 55% of the previous desalination process tool, namely manual desalination prsoes without using the heater element controlled by the temperature and controlled by a microcontroller which takes 9 hours. Produces fresh water as much as 30ml from 3000ml of sea water, so that it can be compared to 1: 100.

scholarly journals A Novel Gate Drive Circuit for Suppressing Turn-on Oscillation of Non-Kelvin Packaged SiC MOSFET

Energies ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2449
Author(s):  
Hongyan Zhao ◽  
Jiangui Chen ◽  
Yan Li ◽  
Fei Lin
Keyword(s):  
Thermal Conductivity ◽  
Breakdown Voltage ◽  
Basic Principle ◽  
Double Pulse ◽  
Experimental Results ◽  
Switching Frequency ◽  
Turn On ◽  
Proof Testing ◽  
Gate Driver ◽  
Drive Circuit

Compared with a silicon MOSFET device, the SiC MOSFET has many benefits, such as higher breakdown voltage, faster action speed and better thermal conductivity. These advantages enable the SiC MOSFET to operate at higher switching frequencies, while, as the switching frequency increases, the turn-on loss accounts for most of the loss. This characteristic severely limits the applications of the SiC MOSFET at higher switching frequencies. Accordingly, an SRD-type drive circuit for a SiC MOSFET is proposed in this paper. The proposed SRD-type drive circuit can suppress the turn-on oscillation of a non-Kelvin packaged SiC MOSFET to ensure that the SiC MOSFET can work at a faster turn-on speed with a lower turn-on loss. In this paper, the basic principle of the proposed SRD-type drive circuit is analyzed, and a double pulse platform is established. For the purpose of proof-testing the performance of the presented SRD-type drive circuit, comparisons and experimental verifications between the traditional gate driver and the proposed SRD-type drive circuit were conducted. Our experimental results finally demonstrate the feasibility and effectiveness of the proposed SRD-type drive circuit.

Superior Short Circuit Performance of 1.2kV SiC JBSFETs Compared to 1.2kV SiC MOSFETs

2019 ◽  
Vol 963 ◽  
pp. 797-800 ◽  
Author(s):  
Ajit Kanale ◽  
Ki Jeong Han ◽  
B. Jayant Baliga ◽  
Subhashish Bhattacharya
Keyword(s):  
High Temperature ◽  
Short Circuit ◽  
Switching Loss ◽  
Switching Circuit ◽  
Inductive Load ◽  
Circuit Performance ◽  
Switching Performance ◽  
Turn On ◽  
Switching Losses ◽  
High Side

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

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