scholarly journals Opening Process of Fictitious Contacts Made of Thermal Plasma after Current Zero in Flat-Type SF6 Gas-Blast Quenching Chamber

1996 ◽  
Vol 116 (10) ◽  
pp. 1204-1211
Author(s):  
Yasunori Tanaka ◽  
Yasunobu Yokomizu ◽  
Motohiro Ishikawa ◽  
Toshiro Matsunmra ◽  
Yukio Kito
Keyword(s):  
Thermal Plasma ◽  
Flat Type ◽  
Current Zero ◽  
Opening Process

CONTACT METHODS FOR DIAGNOSTICS OF THERMAL PLASMA

1990 ◽  
Vol 51 (C5) ◽  
pp. C5-281-C5-288
Author(s):  
P. Lj. STEFANOVIj ◽  
P. B. PAVLOVIj ◽  
M. M. JANKOVIj ◽  
S. N. OKA
Keyword(s):  
Thermal Plasma

Current Zero at Prospective Transient Recovery Voltage Measurement

2016 ◽  
Vol 136 (2) ◽  
pp. 170-174 ◽  
Author(s):  
Tadashi Koshizuka ◽  
Yasuhiko Taniguchi ◽  
Eiichi Haginomori ◽  
Hisatoshi Ikeda ◽  
Keisuke Udagawa
Keyword(s):  
Voltage Measurement ◽  
Transient Recovery Voltage ◽  
Recovery Voltage ◽  
Current Zero

Material Structure of Microcrystalline Silicon Deposited with an Expanding Thermal Plasma

2003 ◽  
Vol 762 ◽  
Author(s):  
C. Smit ◽  
D.L. Williamson ◽  
M.C.M. van de Sanden ◽  
R.A.C.M.M. van Swaaij
Keyword(s):  
Thermal Plasma ◽  
Hydrogen Plasma ◽  
Plasma Chemistry ◽  
Plasma Source ◽  
Growth Direction ◽  
Interaction Time ◽  
Material Structure ◽  
Average Particle ◽  
Microcrystalline Silicon ◽  
X Ray

AbstractExpanding thermal plasma CVD (ETP CVD) has been used to deposit thin microcrystalline silicon films. In this study we varied the position at which the silane is injected in the expanding hydrogen plasma: relatively far from the substrate and close to the plasma source, giving a long interaction time of the plasma with the silane, and close to the substrate, resulting in a short interaction time. The material structure is studied extensively. The crystalline fractions as obtained from Raman spectroscopy as well as from X-ray diffraction (XRD) vary from 0 to 67%. The average particle sizes vary from 6 to 17 nm as estimated from the (111) XRD peak using the Scherrer formula. Small angle X-ray scattering (SAXS) and flotation density measurements indicate void volume fractions of about 4 to 6%. When the samples are tilted the SAXS signal is lower than for the untilted case, indicating elongated objects parallel to the growth direction in the films. We show that the material properties are influenced by the position of silane injection in the reactor, indicating a change in the plasma chemistry.

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