Sounding out buried nanostructures using subsurface ultrasonic resonance force microscopy

MRS Advances ◽  
2018 ◽  
Vol 3 (11) ◽  
pp. 603-608 ◽  
Author(s):  
Maarten H. van Es ◽  
Abbas Mohtashami ◽  
Paul L.M.J. van Neer ◽  
Hamed Sadeghian
Keyword(s):  
Semiconductor Manufacturing ◽  
Common Variants ◽  
Excellent Performance ◽  
Nanoscale Structures ◽  
Force Microscopy ◽  
Atomic Force ◽  
Covering Material ◽  
Ultrasonic Resonance ◽  
Contrast Mechanism ◽  
Fundamental Research

ABSTRACTImaging of nanoscale structures buried in a covering material is an extremely challenging task, but is also considered extremely important in a wide variety of fields. From fundamental research into the way living cells are built up to process control in semiconductor manufacturing would all benefit from the capability to image nanoscale structures through arbitrary covering layers. Combining Atomic Force Microscopy (AFM) with ultrasound has been shown a promising technology to enable such imaging in various configurations. Here we report the development of an alternative method of combining AFM with ultrasound which we call SubSurface Ultrasonic Resonance Force Microscopy (SSURFM) and which is based on a combination of the two most common variants described in literature, which each have their specific strong points: Ultrasonic Force Microscopy (UFM) and Contact Resonance AFM (CR-AFM). We show the excellent performance of this combination on a number of samples designed specifically to mimic relevant conditions for the application as a metrology technique in the semiconductor manufacturing process. We also discuss the physics of the image contrast mechanism which is based on sensing local changes in visco-elastic properties of the sample bygenerating large indentations in the surface.

scholarly journals Highly spatial-resolved chemical metrology on latent resist images

2022 ◽  
Author(s):  
Maarten van Es ◽  
Mehmet Tamer ◽  
Robbert Bloem ◽  
Laurent Fillinger ◽  
Elfi van Zeijl ◽  
...  
Keyword(s):  
Semiconductor Manufacturing ◽  
Electron Beams ◽  
Experimental Proof ◽  
Crucial Step ◽  
Chemical Metrology ◽  
Force Microscopy ◽  
Atomic Force ◽  
Chemically Amplified ◽  
Chemically Amplified Resist ◽  
Infra Red

Abstract Patterning photoresist with extreme control over dose and placement is the first crucial step in semiconductor manufacturing. But, how to accurately measure the activation of modern complex resists components at sufficient spatial resolution? No exposed nanometre-scale resist pattern is sufficiently sturdy to unaltered withstand inspection by intense photon or electron beams, not even after processing and development. This paper presents experimental proof that Infra-Red Atomic Force Microscopy (IR-AFM) is sufficiently sensitive and gentle to chemically record the vulnerable-yet-valuable lithographic patterns in a chemically amplified resist after exposure, prior to development. Accordingly, IR-AFM metrology provides the long-sought-for insights in changes in the chemical and spatial distribution per component in a latent resist image, both directly after exposure as well as during processing. With these to-be-gained understandings, a disruptive acceleration of resist design and processing is expected.

A Model for the Films Formation of Nb–Si–N Ternary Compound Deposited

2012 ◽  
Vol 476-478 ◽  
pp. 475-479 ◽  
Author(s):  
Yong Jun Jiang
Keyword(s):  
Film Formation ◽  
Composite Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nanoscale Structures ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Step Model ◽  
Si Content

By means of the reactive magnetron sputtering method, a series of Nb–Si–N composite films with different Si contents were deposited in an Ar, N2 and SiH4 mixture atmosphere. These films’ chemical composition, phase formation, microstructure and mechanical properties were characterized by the energy dispersive spectroscopy, X-ray diffraction, transmission electron microcopy, atomic force microscopy and nanoindentation. In the Nb–Si–N films, 3 distinct concentration regions have been observed depending on the Si content. Based on the three concentration regions, a three-step model is proposed for the film formation of the Nb–Si–N thin films. This model correlates nanoscale structures with macroscopic properties of the films.

First Principles Simulations of Nanoindentation and Atomic Force Microscopy on Silicon Surfaces

1995 ◽  
Vol 408 ◽  
Author(s):  
R. Perez ◽  
M. C. Payne ◽  
I. Stich ◽  
K. Terakura
Keyword(s):  
First Principles ◽  
Chemical Interaction ◽  
Silicon Surfaces ◽  
Dangling Bonds ◽  
Plastic Deformations ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pseudopotential Calculations ◽  
Contrast Mechanism ◽  
Adhesive Interactions

AbstractTotal-Energy pseudopotential calculations are used to study both the onset and development of plasticity in nanoindentation experiments and the contrast mechanism in non-contact AFM images on Si (111) surfaces. As regards nanoindentation, plastic flow of atoms towards interstitial positions and extrusion of material towards the tip walls, stabilized by the adhesive interactions with the tip, are the dominant mechanisms. These plastic deformations are triggered by the delocalization of the charge induced by the stress in the elastically compressed structure. Atomic resolution contrast in AFM is shown to be clearly enhanced by the partial covalent chemical interaction between the dangling bonds of the adatoms in the surface and the apex atom in the tip. The contrast mechanism can be understood in terms of the coupling between the tip and the charge transfer modes among the different dangling bonds in the surface.

Surface morphology and mechanical properties of MDCK monolayers by atomic force microscopy

1994 ◽  
Vol 107 (5) ◽  
pp. 1105-1114 ◽  
Author(s):  
J.H. Hoh ◽  
C.A. Schoenenberger
Keyword(s):  
Mechanical Properties ◽  
Atomic Force Microscopy ◽  
Plasma Membrane ◽  
Mechanical Stability ◽  
Physiological Solution ◽  
Apical Plasma Membrane ◽  
Apical Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Contrast Mechanism

We describe the morphology and mechanical stability of the apical surface of MDCK monolayers by atomic force microscopy (AFM). Living cells could be imaged in physiological solution for several hours without noticeable deterioration. Cell boundaries appear as ridges that clearly demarcate neighboring cells. In some cases the nucleus of individual cells could be seen, though apparently only in very thin areas of the monolayer. Two types of protrusions on the surface could be visualized. Smooth bulges that varied in width from a few hundred nanometers to several micrometers, which appear to represent relatively rigid subapical structures. Another type of protrusion extended well above the membrane and was swept back and forth during the imaging. However, the microvilli that are typically present on the apical surface could not be resolved. For comparison, a transformed MDCK cell line expressing the K-ras oncogene was also examined. When cultured on solid substrata at low density, the R5 cells spread out and are less than 100 nm thick over large areas with both extensive processes and rounded edges. Many intracellular structures such as the nucleus, cytoskeletal elements and vesicles could be visualized. None of the intracellular structures seen in the AFM images could be seen by scanning electron microscopy. Both R5 cells and MDCK monolayers required imaging forces of > 2 nN for good image contrast. Force measurements on the MDCK monolayers show that they are very soft, with an effective spring constant of approximately 0.002 N/m for the apical plasma membrane, over the first micrometer of deformation, resulting in a height deformation of approximately 500 nm per nanoNewton of applied force. The mechanical properties of the cells could be manipulated by addition of glutaraldehyde. These changes were monitored in real time by collecting force curves during the fixation reaction. The curves show a stiffening of the apical plasma membrane that was completed in approximately 1 minute. On the basis of these measurements and the imaging forces required, we conclude that deformation of the plasma membrane is an important component of the contrast mechanism, in effect ‘staining’ structures based on their relative rigidity.

Phase image contrast mechanism in intermittent contact atomic force microscopy

2010 ◽  
Vol 108 (9) ◽  
pp. 094311 ◽  
Author(s):  
Yagun Zhao ◽  
Qian Cheng ◽  
Menglu Qian ◽  
John H. Cantrell
Keyword(s):  
Atomic Force Microscopy ◽  
Image Contrast ◽  
Phase Image ◽  
Force Microscopy ◽  
Atomic Force ◽  
Contrast Mechanism ◽  
Intermittent Contact

Quantitative Analysis and Interpretation of Atomic Force Microscopy (AFM) Phase Imaging

1997 ◽  
Vol 3 (S2) ◽  
pp. 1271-1272
Author(s):  
D.N. Leonard ◽  
A.D. Batchelor ◽  
P.E. Russell
Keyword(s):  
Atomic Force Microscopy ◽  
Scanning Probe Microscopy ◽  
Direct Result ◽  
Mapping Technique ◽  
Phase Imaging ◽  
Force Microscopy ◽  
Atomic Force ◽  
Surface Variation ◽  
Contrast Mechanism ◽  
Insight Into

Gaps in the understanding and interpretation of data collected in various SPM modes are a direct result of the rapidly advancing scanning probe microscopy (SPM) technology. This systematic study is coupling classical metallurgical samples with a new surface variation mapping technique in an effort to further the quantitative comprehension of atomic force microscopy (AFM) phase imaging.Phase imaging is a technique that has exhibited the ability to provide the microscopist with qualitative information of a material’s microstructure on the nanometer scale. Regions of a microstructure that exhibit incongruous mechanical properties like: friction, elastic modulus, composition, and viscoelasticity are displayed, in the resulting image, as regions of differing contrast. An example of this type of phase contrast is clearly seen in FIG. 1. A quantification of the phase shift will give new insight into the cause of the contrast mechanism, and reason for contrast reversal.

Atomic-scale contrast mechanism in atomic force microscopy

1992 ◽  
Vol 88 (3) ◽  
pp. 321-326 ◽  
Author(s):  
H. Heinzelmann ◽  
E. Meyer ◽  
D. Brodbeck ◽  
G. Overney ◽  
H. -J. G�ntherodt
Keyword(s):  
Atomic Force Microscopy ◽  
Atomic Scale ◽  
Force Microscopy ◽  
Atomic Force ◽  
Contrast Mechanism
Sign in / Sign up

Export Citation Format

Share Document