Ni, Pd, and Pt on GaAs: A comparative study of interfacial structures, compositions, and reacted film morphologies

1987 ◽  
Vol 2 (2) ◽  
pp. 262-275 ◽  
Author(s):  
T. Sands ◽  
V. G. Keramidas ◽  
A. J. Yu ◽  
K-M. Yu ◽  
R. Gronsky ◽  
...  
Keyword(s):  
Thin Film ◽  
Noble Metals ◽  
Rutherford Backscattering Spectrometry ◽  
Native Oxide ◽  
Nominal Composition ◽  
X Rays ◽  
Energy Dispersive Analysis ◽  
Isothermal Sections ◽  
Transmission Electron ◽  
Interfacial Structures

The reactions between (100) GaAs and the near-noble metals Ni, Pd, and Pt have been investigated by application of high-resolution transmission electron microscopy (TEM), energy-dispersive analysis of x-rays in the scanning TEM and Rutherford backscattering spectrometry. Emphasis is placed on the evolution of the phase distributions, film compositions, and interface morphologies during annealing at temperatures up to 480°C. The first phase in the Ni/GaAs reaction is shown to have the nominal composition Ni3GaAs. Ternary phases of the type PdxGaAs are also found to be the dominant products of the Pd/GaAs reaction. Conversely, only binary phases result from the Pt/GaAs reaction. These observations are used to construct isothermal sections of the M-Ga-As thin-film phase diagrams. The behavior of a thin (1–2 nm) native oxide-hydrocarbon layer during the Ni/GaAs, Pd/GaAs, and Pt/GaAs reactions is also investigated. Only the Ni/GaAs reaction is noticeably impeded in some regions by this intervening layer. In contrast, the Pd/GaAs and Pt/GaAs reactions tend to mechanically disperse the native oxide layers.

Investigations on Tin Selenide Thin Film Based Schottky Barrier Diodes by I-V-T Method

2013 ◽  
Vol 665 ◽  
pp. 297-301
Author(s):  
Kiran Kumar Patel ◽  
K.D. Patel ◽  
Mayur Patel ◽  
Keyur S. Hingarajiya ◽  
V.M. Pathak
Keyword(s):  
Thin Film ◽  
Schottky Barrier ◽  
X Rays ◽  
X Ray Diffraction ◽  
Tem Analysis ◽  
Glass Substrates ◽  
Tin Selenide ◽  
Transmission Electron ◽  
Evaporation Technique ◽  
Selenide Thin Film

Tin Selenide thin films have been deposited using thermal evaporation technique on chemically and ultrasonically cleaned glass substrates. The stoichiometry of deposited films has been studied using Energy Dispersive Analysis of X-rays (EDAX).The orthorhombic structure and polycrystalline nature of the films were also revealed by X-ray diffraction (XRD) and Transmission Electron Microscopy (TEM) analysis. The well characterized thin film of SnSe was then used to fabricate Ag/p-SnSe/In Schottky barrier diode. The I-V characteristics of prepared diodes have been investigated over the temperature range of 303 K to 393 K. The forward biased I-V characteristics of prepared structure has been analyzed using TE theory and different device parameters have been evaluated and discussed in present paper. The Richardson constant was also determined from the conventional Richardson plot and it is found close to the reported value.

Mechanisms of Low-Temperature Ti/Si-Based Wafer Bonding

2005 ◽  
Vol 863 ◽  
Author(s):  
Jian Yu ◽  
Yinmin Wang ◽  
Arthur W. Haberl ◽  
Hassa Bakhru ◽  
Jian-Qiang Lu ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Wafer Bonding ◽  
Rutherford Backscattering Spectrometry ◽  
Three Dimensional ◽  
Amorphous Layer ◽  
Bonding Interface ◽  
Native Oxide ◽  
Wafer Level ◽  
Transmission Electron ◽  
Strong Adhesion

AbstractThree-dimensional (3D) wafer-level integration is receiving increased attention with various wafer bonding approaches being evaluated. Recently, we explored an alternative lowtemperature Ti/Si-based wafer bonding, in which an oxidized silicon wafer was successfully bonded with a prime silicon wafer at 400°C using 30 nm sputtered Ti as adhesive. The bonded pairs show excellent bonding uniformity and mechanical integrity. Rutherford backscattering spectrometry (RBS) was applied to confirm the interdiffusion occurred in the interlayer. The bonding interface was examined by high-resolution transmission electron microscopy (HRTEM) assisted with electron energy loss spectroscopy (EELS) elemental mapping and energy dispersive X-ray spectroscopy (EDX). Characterization of the bonding interface indicates the strong adhesion achieved is attributed to an amorphous layer formed by interdiffusion of Si and oxygen into Ti interlayer and the unique ability to reduce native oxide (SiO2) by Ti even at low temperatures.

IN SITU ASSEMBLY OF ZnS NANOFIBERS WITH HIGHLY ORDERED LAMELLAR MESOSTRUCTURE

2006 ◽  
Vol 05 (02n03) ◽  
pp. 245-251 ◽  
Author(s):  
JUNPING LI ◽  
YAO XU ◽  
DONG WU ◽  
YUHAN SUN
Keyword(s):  
Electron Microscope ◽  
Thermal Analyses ◽  
Blue Shift ◽  
X Rays ◽  
Energy Dispersive Analysis ◽  
Visible Absorption ◽  
X Ray ◽  
Transmission Electron ◽  
Uv Visible

ZnS nanofibers with lamellar mesostructure could be built up from in situ generated ZnS precursors via hydrothermal routes using neutral n-alkylamines as structure-directing template and ethylene diamine tetraacetic acid (EDTA) as stabilizer. The morphology and structure of the obtained products were thoroughly investigated via scanning electron microscope (SEM), energy dispersive analysis of X-rays (EDX), transmission electron microscope (TEM), X-ray powder diffraction (XRD) and thermal analyses. HRTEM and XRD results revealed that the so-produced nanofibers were lamellar mesostructure and its framework was built of crystalline wurtzite ZnS . It was also found that the distance between the layers was proportional to the chain length of the alkylamine. The UV-visible absorption spectrum showed that the nanofibers exhibited strong quantum-confined effect with a blue shift in the band gap. Finally, a probable mechanism for the assembly of the nanofibers was also proposed.

Crystallization Behavior of Sputter Deposited Amorphous NixZr100-x, Films

1990 ◽  
Vol 205 ◽  
Author(s):  
Gillian E. Winters ◽  
K.M. Unruh ◽  
C.P. Swann
Keyword(s):  
Crystallization Behavior ◽  
Rutherford Backscattering Spectrometry ◽  
Nominal Composition ◽  
Scanning Calorimetry ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Substrate Temperatures ◽  
Deposited Films ◽  
Thermal Stability Of ◽  
Continuous Range

AbstractSputter deposited films of amorphous NixZr100-x, have been prepared over a wide and continuous range of compositions between x=20 and x=90 atomic percent Ni on liquid nitrogen cooled and room temperature substrates. These films have been characterized by xray and electron diffraction, transmission electron microscopy, and Rutherford backscattering spectrometry. The crystallization behavior of these films has been systematically studied by differential scanning calorimetry and compared with earlier measurements on amorphous liquid quenched alloys. Systematic differences were found between the thermal stability of amorphous alloys of the same nominal composition prepared at different substrate temperatures. Larger differences exist between vapor deposited amorphous films and liquid quenched ribbons.

On The Mechanism of Fatigue in Micron-Scale Structural Films of Polycrystalline Silicon

2001 ◽  
Vol 697 ◽  
Author(s):  
C. L. Muhlstein ◽  
E. A. Stach ◽  
R. O. Ritchie
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Fatigue Behavior ◽  
Crack Size ◽  
Native Oxide ◽  
Self Assembled Monolayer ◽  
Critical Crack ◽  
Thin Film Silicon ◽  
Transmission Electron ◽  
Critical Crack Size

Abstract2-μm thick structural films of polycrystalline silicon are shown to display “metal-like” stress-life fatigue behavior in room air, with failures occurring after > 1011 cycles at stresses as low as half the fracture strength. Using in situ measurements of the specimen compliance and transmission electron microscopy to characterize such damage, the mechanism of thin-film silicon fatigue is deduced to be sequential oxidation and moisture-assisted cracking in the native SiO2 layer. This mechanism can also occur in bulk silicon but it is only relevant in thin films where the critical crack size for catastrophic failure can be exceeded within the oxide layer. The fatigue susceptibility of thin-film silicon is shown to be suppressed by alkene-based self-assembled monolayer coatings that prevent the formation of the native oxide.

Precipitation of Nanoscale Hydrous Alumina from Sodium Aluminate Solutions

2001 ◽  
Vol 704 ◽  
Author(s):  
Biman Das ◽  
Mats Graeffe ◽  
Alicia Toscano ◽  
Chris Brancewicz ◽  
Don H. Rasmussen
Keyword(s):  
Oxalic Acid ◽  
Sodium Aluminate ◽  
X Rays ◽  
Energy Dispersive Analysis ◽  
X Ray Diffraction ◽  
Sodium Carboxymethylcellulose ◽  
X Ray ◽  
Transmission Electron Microcopy ◽  
Transmission Electron ◽  
Surface Active

AbstractSodium aluminate liquor was diluted and neutralized with water and oxalic acid in the presence of surface-active polymers polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA) and sodium carboxymethylcellulose (NaCMC). Dynamic light scattering experiments showed that the final precipitate had diameters between 80 – 300 nm when precipitated in the presence of PVP, and 600 – 800 nm when precipitated in the presence of NaCMC. The initial sols prepared using oxalic acid without surfactant had diameters of 200 – 300 nm. Scanning Electron Microscopy, SEM, Energy Dispersive Analysis by X-rays, EDAX, and X-ray diffraction were used for imaging, chemical and structural analysis of the final dialyzed particles. Transmission Electron Microcopy, TEM, images of the sols trapped and dried between nitrocellulose membranes showed that the initial particles were nearly spherical and bimodal in particle size. Larger particles had diameter of about 176 nm but were not pure solid alumina. A small fraction of initial particles had diameters much smaller than 176 nm. The discrepancies between initial and final precipitates indicate a complex precipitation pathway.

On the Mechanism of Fatigue in Micron-Scale Structural Films of Polycrystalline Silicon

2001 ◽  
Vol 687 ◽  
Author(s):  
C. L. Muhlstein ◽  
E. A. Stach ◽  
R. O. Ritchie
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
Fatigue Behavior ◽  
Crack Size ◽  
Native Oxide ◽  
Self Assembled Monolayer ◽  
Critical Crack ◽  
Thin Film Silicon ◽  
Transmission Electron ◽  
Critical Crack Size

Abstract2-νm thick structural films of polycrystalline silicon are shown to display “metal-like” stress- life fatigue behavior in room air, with failures occurring after >1011 cycles at stresses as low as half the fracture strength. Using in situ measurements of the specimen compliance and transmission electron microscopy to characterize such damage, the mechanism of thin-film silicon fatigue is deduced to be sequential oxidation and moisture-assisted cracking in the native SiO2 layer. This mechanism can also occur in bulk silicon but it is only relevant in thin films where the critical crack size for catastrophic failure can be exceeded within the oxide layer. The fatigue susceptibility of thin-film silicon is shown to be suppressed by alkene-based self- assembled monolayer coatings that prevent the formation of the native oxide.

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