Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy

1993 ◽  
Vol 8 (9) ◽  
pp. 2310-2314 ◽  
Author(s):  
L.B. Rowland ◽  
R.S. Kern ◽  
S. Tanak ◽  
Robert F. Davis
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Effusion Cell ◽  
Nitrogen Species ◽  
Gas Source ◽  
Resonance Plasma

Monocrystalline AlN(0001) films with few defects were deposited on vicinal α(6H)–SiC(0001) wafers via plasma-assisted, gas-source molecular beam epitaxy within the temperature range of 1050–1200 °C. The Al was thermally evaporated from an effusion cell. An electron cyclotron resonance plasma source was used to produce activated nitrogen species. Growth on vicinal Si(100) at 900–1050 °C resulted in smooth, highly oriented AlN(0001) films.

Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy

1989 ◽  
Vol 162 ◽  
Author(s):  
Z. Sitar ◽  
M. J. Paisley ◽  
B. Yan ◽  
R. F. Davis
Keyword(s):  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Structural Defects ◽  
Effusion Cell ◽  
Gas Source ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Gas Source Mbe ◽  
Inversion Domain Boundaries ◽  
Resonance Plasma

ABSTRACTSingle crystal cubic or hexagonal GaN thin films have been grown on various substrates, using a modified gas source MBE technique. A standard effusion cell was employed for the evaporation of gallium. A compact electron cyclotron resonance plasma source was used to activate the nitrogen prior to deposition. The films were examined by transmission electron microscopy. The major defects in the wurtzite GaN were double positioning boundaries, inversion domain boundaries, and dislocations. The zinc-blende GaN showed microtwins, stacking faults, and dislocations. The connection between the observed structural defects and the poor electrical properties of GaN is noted.

Electron cyclotron resonance plasma etching of HgTe-CdTe superlattices grown by photo-assisted molecular beam epitaxy

1995 ◽  
Vol 24 (9) ◽  
pp. 1201-1206 ◽  
Author(s):  
K. A. Harris ◽  
D. W. Endres ◽  
R. W. Yanka ◽  
L. M. Mohnkern ◽  
A. R. Reisinger ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Plasma Etching ◽  
Cyclotron Resonance ◽  
Molecular Beam ◽  
Electron Cyclotron Resonance ◽  
Electron Cyclotron ◽  
Electron Cyclotron Resonance Plasma ◽  
Resonance Plasma
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