Investigation of TiC films synthesized by low energy ion bombardment

1994 ◽  
Vol 9 (9) ◽  
pp. 2355-2361 ◽  
Author(s):  
Xiao-Ming He ◽  
Wen-Zhi Li ◽  
Heng-De Li
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Low Friction ◽  
Aisi 52100 ◽  
Beam Sputtering ◽  
Aisi 52100 Steel ◽  
Dual Ion Beam Sputtering

Low energy bombardment of CHn+ at 100-800 eV has been used to prepare TiC film at room temperature by dual ion beam sputtering. The ion bombardment energies and densities obviously affect the metallographic morphology, the crystalline orientation, and constituent ratio of TiC films. TiC films formed under 200-600 eV CHn+ bombarding with 120-190 μA/cm2 possess much finer and compact microstructure in the compressive stress state. Its hardness is in the range of 2650-2880 kgf/mm2. The tribological tests indicate that TiC films synthesized on AISI 52100 steel by DIBS with low energy bombardment exhibit low friction coefficient and good wear resistance.

Differences between Sputtering Methods in The Formation of Amorphous Magnetic Alloy Films

1985 ◽  
Vol 58 ◽  
Author(s):  
Y. Hoshi ◽  
M. Naoe
Keyword(s):  
Ion Beam ◽  
Film Surface ◽  
Ion Bombardment ◽  
Plasma Potential ◽  
Magnetic Alloy ◽  
Ion Beam Sputtering ◽  
Amorphous Films ◽  
Beam Sputtering ◽  
Amorphous Structures ◽  
Dual Ion Beam Sputtering

ABSTRACTFe-Si, Co-Ta and Co-Zr amorphous films have been deposited by using various sputtering methods (conventional rf diode sputtering, rf triode sputtering, dc Targets Facing type sputtering (dc TF sputtering) and dual ion beam sputtering (DIB sputtering)). The lower limit of the Si and Ta content to form amorphous Fe-Si and Co-Ta films changes significantly with the sputtering method. These differences between the sputtering methods are mainly caused by the differences in the plasma potential which affects the amount of ion bombardment to the film surface during sputtering,and the minimum content of Si or Ta to obtain amorphous films decreases as the plasma potential increases. These results indicate that the ion bombardment suppresses the growth of crystallites and promotes the formation of the films with amorphous structures. This is confirmed by the deposition of Co-Ta and Co-Zr amorphous films under the condition of various amount of ion bombardment by using a DIB sputtering system.

Ion Beam Induced Growth Structure of Fluorite Type Oxide Films for Biaxially Textured HYSC Coated Conductors

1999 ◽  
Vol 585 ◽  
Author(s):  
Y. Iijima ◽  
M. Kimura ◽  
T. Saitoh
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Coated Conductors ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Fluorite Type ◽  
Pyrochlore Type ◽  
Oxide Crystals

AbstractBiaxially aligned film growth by dual-ion-beam sputtering methods were studied for fluorite type (Zr0.85Y0.15O1.93(YSZ), Hf0.74Yb0.26O1.87, CeO2), pyrochlore type (Zr2Sm2O7), and rare-earth C type (Y2O3, Sm2O3) oxides on polycrystalline Ni-based alloy substrates. Cubetextured (all axes aligned with a <100> axis substrate normal) films were obtained for fluorite and pyrochlore ones by low energy (<300 eV) ion bombardment at low temperatures (< 300 °C). Besides, cube textured Y2O3 films were obtained in far narrower conditions with a quite low energy (150 eV)-ion bombardment at the temperature of 300 °C. The assisting ion energy dependence was discussed in connection with lattice energies for these oxide crystals.

Ion Beam Induced Growth Structure of Fluorite Type Oxide Films for Biaxially Textured htsc Coated Conductors

1999 ◽  
Vol 587 ◽  
Author(s):  
Y. Iijima ◽  
M. Kimura ◽  
T. Saitoh
Keyword(s):  
Film Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Coated Conductors ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Fluorite Type ◽  
Pyrochlore Type ◽  
Oxide Crystals

AbstractBiaxially aligned film growth by dual-ion-beam sputtering method were studied for fluorite type (Zr0.85Y0.15O1.93(YSZ), Hf0.74Yb0.26O1.87, CeO2), pyrochlore type (Zr2Sm2O7), and rare-earth C type (Y2O3, Sm2O3) oxides on polycrystalline Ni-based alloy substrates. Cube-textured (all axes aligned with a <100> axis substrate normal) films were obtained for fluorite and pyrochlore ones by low energy (<300 eV) ion bombardment at low temperatures (< 300 °C). Besides, cube textured Y2O3 films were obtained in far narrow conditions with a quite low energy (150 eV)-ion bombardment at the temperature of 300°C. The assisting ion energy dependence was discussed in connection with lattice energies for these oxide crystals.

Electrical and Optical Properties of Permalloy Oxide grown by dual ion beam sputtering.

2014 ◽  
Vol 1708 ◽  
Author(s):  
Maclyn Stuart Compton ◽  
Nelson A. Simpson ◽  
Elizabeth G. LeBlanc ◽  
Michael A. Robinson ◽  
Wilhelmus J. Geerts
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Optical Measurements ◽  
Ion Beam Sputtering ◽  
Electrical And Optical Properties ◽  
Optical Refraction ◽  
Beam Sputtering ◽  
Reproducible Method ◽  
Dual Ion Beam Sputtering

ABSTRACTElectrical and Optical measurements were carried out on permalloy oxide (PyO) thin films made by reactive dual ion beam sputtering at room temperature. VSM measurements at room temperature and 15 Kelvin did not reveal any magnetic moment in 120 nm thick films. The optical refraction and extinction spectra from 200-1000 nm were determined from ellipsometry measurements using a Cody-Lorentz model and provided in a reproducible method to determine the film thickness of PyO films on different substrate materials. PyO is transparent above 700 nm and is strongly absorbing below 500 nm. The resistivity values of PyO samples sputtered at room temperature depend on the oxygen flow rate and is approximately 4E3 Ohm cm for films prepared at 10 sccm. The resistivity of PyO decreases as a function of temperature. The dielectric constant is strongly frequency dependent, decreasing from 500 at 500 Hz to 10 at 1 MHz.

scholarly journals Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
C. G. Jin ◽  
X. M. Wu ◽  
L. J. Zhuge
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Ion Beam ◽  
Substrate Surface ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Sic Films

Silicon carbide (SiC) films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV) was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

Abnormal structure of titanium formed by ion beam sputtering at room temperature

1994 ◽  
Vol 20 (5-6) ◽  
pp. 325-327 ◽  
Author(s):  
C.H. Liu ◽  
Li Wen-Zhi ◽  
Li Heng-De
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Abnormal Structure ◽  
Beam Sputtering
Sign in / Sign up

Export Citation Format

Share Document