Post-annealing induced defects and their influences on Bi2Sr2CaCu2Oy superconducting thin films

1995 ◽  
Vol 10 (8) ◽  
pp. 1872-1877 ◽  
Author(s):  
Xiao Feng Zhang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Large Angle ◽  
High Resolution Electron Microscopy ◽  
Superconducting Thin Films ◽  
Superconducting Transition ◽  
Secondary Phases ◽  
Post Annealing ◽  
Resolution Electron ◽  
Induced Defects

Defects in Bi2Sr2Can-1CunOy superconducting thin films annealed in an oxygen atmosphere are examined by high-resolution electron microscopy (HREM). In addition to the majority 2212 (n = 2) phase, subsequent slabs of other homologous phases with n values up to n = 10 are found intergrown in the films. Large-angle tilt grain boundaries and various secondary phases such as CuO, Sr-Cu-O oxides are formed in the films. The occurrence of these defects is attributed to an inhomogeneous Sr, Ca, and Cu distribution induced by the post-annealing. Superconducting transition temperature (Tc) is increased by the annealing under suitable conditions.

Morphology of Vapor Evaporated Mo Thin Films

1991 ◽  
Vol 222 ◽  
Author(s):  
Y. Cheng ◽  
M. B. Stearns
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Large Angle ◽  
High Resolution Electron Microscopy ◽  
Cross Sectional ◽  
X Ray ◽  
X Ray Scattering ◽  
Resolution Electron ◽  
Deposition Angle

ABSTRACTStudies were made of the dependence of the morphology of Mo films, prepared by ebeam evaporation in an UHV system, on the substrate temperature and deposition angle. The main characterization techniques used were large angle x-ray scattering and cross-sectional high resolution electron microscopy.

Recent studies of thin films and surfaces by high-Resolution electron microscopy

1992 ◽  
Vol 23 (4) ◽  
pp. 1063-1070
Author(s):  
David J. Smith ◽  
Rob W. Glaisher ◽  
Z. G. Li ◽  
Ping Lu ◽  
M. R. McCartney ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron

High-resolution electron microscopy study of SiGeC thin films grown on Si(100) by laser-assisted techniques

2006 ◽  
Vol 252 (13) ◽  
pp. 4527-4530
Author(s):  
Ch.B. Lioutas ◽  
N. Frangis ◽  
S. Soumelidis ◽  
S. Chiussi ◽  
E. López ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
High Resolution Electron Microscopy ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Resolution Electron

High-resolution electron microscopy investigations of stacking faults in Y1Ba2Cu3O7−δ metalorganic chemical vapor deposited thin films

1999 ◽  
Vol 14 (7) ◽  
pp. 2732-2738 ◽  
Author(s):  
Ch. Grigis ◽  
S. Schamm ◽  
D. Dorignac
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
High Resolution ◽  
Image Matching ◽  
Chemical Vapor ◽  
High Resolution Electron Microscopy ◽  
Resolution Electron ◽  
Chemical Vapor Deposited ◽  
Structural Imperfections ◽  
Metalorganic Chemical

New structural planar defects in Ba-deficient Y1Ba2Cu3O7−δ (YBCO) (1:1.6:3) thin films grown on NdGaO3 and SrTiO3 substrates by metalorganic chemical vapor deposition have been observed by means of high-resolution electron microscopy. The defects are associated with perturbations of the YBCO “1:2:3” stacking sequences along the c direction, which give rise to structural variants with locally “2:5:7,” “3:4:7,” or “4:6:10” cationic stoichiometries. The defects can be consistently interpreted as CuO–YO–CuO/CuO conversions or YO/BaO (BaO/YO) interconversions in the (a,b) planes and extending over a few nanometers along the c axis. Structural models based on image matching with simulations are proposed for two particular cases. It is thought that these structural imperfections can be effective sites of flux pinning.

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