Excimer laser deposition of c-axis oriented Pb(Zr, Ti)O3 thin films on silicon substrates with direct-current glow discharge

Ferroelectric thin films of Pb(Zr, Ti)O3 (PZT) were fabricated on platinum-coated silicon using the process of direct-current glow discharge assisted laser deposition, where the substrate was electrically grounded. The films deposited at 730 °C with +800 V discharge voltage are oriented mostly with the c-axis perpendicular to the substrate surface, and exhibit good ferroelectric hysteresis loops. A possible mechanism for the improvement of the deposition process has been proposed.

Download Full-text

Effect of Capacitor Configuration on Oxygen-dependent Electrical Properties of Ferroelectric Pb(Zr,Ti)O3 Thin Films

MRS Proceedings ◽

10.1557/proc-688-c4.16.1 ◽

2001 ◽

Vol 688 ◽

Author(s):

M. A. McCormick ◽

E. B. Slamovich ◽

P. Metcalf ◽

M. McElfresh

Keyword(s):

Thin Films ◽

Room Temperature ◽

Hysteresis Loops ◽

Laser Deposition ◽

Partial Pressure Of Oxygen ◽

Pzt Thin Films ◽

Pzt Films ◽

Planar Capacitor ◽

Polarization Axis ◽

Ferroelectric Hysteresis

AbstractPolarization versus applied field (P-E) hysteresis loop measurements on Pb(Zr,Ti)O3 (PZT) thin films were performed using a controlled-atmosphere probe station. Measurements were made using two different capacitor configurations, each producing differing results. The capacitor configurations included using either the typical arrangement of two top electrodes (planar) or an arrangement using contacts to the top and the bottom electrodes (sandwich). The films included PZT films deposited using pulsed laser deposition (PLD) and commercially-available rfsputtered PZT thin films. Qualitatively similar results were obtained for both types of films. For both PLD and Ramtron PZT films, translation of ferroelectric hysteresis loops along the polarization axis was observed for sandwich capacitors. The magnitude of this voltage was strongly dependent on the partial pressure of oxygen at room temperature. Translations were not observed for the same films using the planar capacitor configuration. However, for both sandwich and planar configurations, the thin film capacitance was sensitive to changes in pO2.

Download Full-text

Low-temperature ultraviolet sol-gel photoannealing processing of multifunctional lead-titanate-based thin films

Journal of Materials Research ◽

10.1557/jmr.2007.0228 ◽

2007 ◽

Vol 22 (7) ◽

pp. 1824-1833 ◽

Cited By ~ 11

Author(s):

M.L. Calzada ◽

I. Bretos ◽

R. Jiménez ◽

H. Guillon ◽

J. Ricote ◽

...

Keyword(s):

Thin Films ◽

Thermal Processing ◽

Lead Titanate ◽

Remanent Polarization ◽

Sol Gel ◽

Rapid Thermal Processing ◽

Hysteresis Loops ◽

Relaxor Ferroelectric ◽

Silicon Substrates ◽

Ferroelectric Hysteresis

(Pb1−xCax)TiO3 perovskite thin films with nominal compositions of (Pb0.76Ca.24)TiO3 (ferroelectric) and (Pb0.50Ca0.50)TiO3 (relaxor-ferroelectric) were prepared on silicon substrates at low temperatures compatible with those used in Si-technology. The technique used for the processing of these films was ultraviolet (UV) sol-gel photoannealing, using photo-sensitive precursor solutions and UV-assisted rapid thermal processing. The UV-irradiation and thermal treatment of the solution-derived films (gel films) were carried out in air or in oxygen. In both cases, the formation of the perovskite occurred at the same temperature, and this temperature increased as the Ca2+ content increased. Thus, full-perovskite films of (Pb0.76Ca.24)TiO3 were obtained at 723 K whereas those of (Pb0.50Ca0.50)TiO3 were formed at 773 K. Well-defined ferroelectric hysteresis loops were measured in the (Pb0.76Ca.24)TiO3 films, with values of remanent polarization of Pr ∼ 11 μC cm−2 and coercive fields for the films processed in oxygen lower than those of the films processed in air, Ec ∼ 164 and ∼226 kV.cm−1, respectively. These films showed a ferro-paraelectric transition at close temperatures of Tmax ∼ 605 K, although with higher values of the permittivity for the film processed in oxygen, k ∼ 567 at 10 kHz. The (Pb0.50Ca.50)TiO3 films had a diffuse ferro-paraelectric transition with a relaxor-like character, also with higher k values for the films prepared in oxygen, k ∼ 179 at Tmax ∼ 20 K. The possible use of these materials in silicon integrated multifunctional devices is discussed in this paper.

Download Full-text

Influence of the microstructure of Pt/Si substrates on textured growth of barium titanate thin films prepared by pulsed laser deposition

Journal of Materials Research ◽

10.1557/jmr.1998.0049 ◽

1998 ◽

Vol 13 (2) ◽

pp. 368-375 ◽

Cited By ~ 22

Author(s):

Cheol Seong Hwang ◽

Mark D. Vaudin ◽

Peter K. Schenck

Keyword(s):

Thin Films ◽

Substrate Surface ◽

Pulsed Laser ◽

Pulsed Laser Ablation ◽

Growth Behavior ◽

Laser Deposition ◽

Silicon Substrates ◽

Epitaxial Relationship ◽

Si Substrates ◽

Transmission Electron

Pt-coated silicon substrates with strong (111) Pt texture were annealed in an oxidizing atmosphere at temperatures from 500 °C to 750 °C. BaTiO3 thin films were deposited by pulsed laser ablation on the substrates. Observation by transmission electron microscopy showed that the substrate anneal caused the formation of TiO2 in the Pt layer, accompanied by the formation of a high density of faceted protrusions on the Pt surface, particularly at the higher anneal temperatures. The Pt protrusions had (111) facets, parallel to the substrate surface, on which (100)-oriented BaTiO3 grains were observed. BaTiO3 grains with an epitaxial relationship to the Pt lattice were observed on inclined facets of the Pt protrusions [which were not (111) planes], and also on the nonplanar regions of the Pt surface. These epitaxial BaTiO3 grains had (111) preferred orientation relative to the substrate surface. Thus, the BaTiO3 films displayed bimodal growth behavior, with both (100) texture and (111) epitaxy. We propose a model for this behavior based on surface energy considerations.

Download Full-text

Epitaxial Growth and Multiferroic Properties of (001)-Oriented BiFeO3-YMnO3 Films

Energy Harvesting and Systems ◽

10.1515/ehs-2014-0054 ◽

2015 ◽

Vol 2 (3-4) ◽

pp. 157-162

Author(s):

Peng-Xiao Nie ◽

Yi-Ping Wang ◽

Ying Yang ◽

Guo-Liang Yuan ◽

Wei Li ◽

...

Keyword(s):

Thin Films ◽

Room Temperature ◽

Single Phase ◽

Hysteresis Loops ◽

Laser Deposition ◽

X Ray Diffraction ◽

Leakage Currents ◽

X Ray ◽

Multiferroic Properties ◽

Ferroelectric Hysteresis

Abstract In this paper, high-quality multiferroic (1-x)BiFeO3-xYMnO3 (x=0.05, 0.10, 0.15) thin films were successfully epitaxially grown on (001)SrTiO3 substrates with La0.67Sr0.33MnO3 buffered layers by pulsed laser deposition (PLD). X-ray diffraction shows the thin films are all single-phase perovskite with preferential orientation along the (001) direction. The (002) diffraction angles of thin films (from 0 to 0.15) shift to right, indicating the decrease of lattice parameters. All YMnO3-doped thin films exhibit strong upward self-poling via piezoelectric force microscope (PFM) measurement. Saturated ferroelectric hysteresis loops of thin films cannot be obtained even at the frequency of 50 kHz because of large leakage currents. It is noted that BFO-YMO thin films exhibit ferroelectricity considering the PFM and ferroelectric test. The magnetization measurements show that all BiFeO3-based films exhibit weak ferromagnetic behaviors with saturated magnetization at room temperature. The enhancement of magnetization was observed because of YMO doping, with the maximum saturation magnetization (M s) of 17.07 emu/cm3 in x=0.10 thin film.

Download Full-text

Optimization of the pulsed laser deposition process of In2O3 thin films for ferroelectric field effect device applications

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-020-04935-x ◽

2021 ◽

Author(s):

Meng Xu ◽

Lei Guo ◽

Jian-Min Yan ◽

Zhi-Xue Xu ◽

Hui Wang ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Field Effect ◽

Pulsed Laser ◽

Deposition Process ◽

Laser Deposition ◽

Device Applications

Download Full-text

Low-energy femtosecond pulsed laser deposition of cerium (IV) oxide thin films on silicon substrates

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2021.126323 ◽

2021 ◽

pp. 126323

Author(s):

Joseph A. De Mesa ◽

Angelo P. Rillera ◽

Melvin John F. Empizo ◽

Nobuhiko Sarukura ◽

Roland V. Sarmago ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Low Energy ◽

Laser Deposition ◽

Silicon Substrates ◽

Oxide Thin Films ◽

Femtosecond Pulsed Laser

Download Full-text

Effects of Single-Crystalline GaN Target on GaN Thin Films in Pulsed Laser Deposition Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.44.7896 ◽

2005 ◽

Vol 44 (11) ◽

pp. 7896-7900 ◽

Cited By ~ 3

Author(s):

Takahiro Nagata ◽

Young-Zo Yoo ◽

Parhat Ahmet ◽

Toyohiro Chikyow

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Deposition Process ◽

Laser Deposition ◽

Single Crystalline

Download Full-text

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-243-495 ◽

1991 ◽

Vol 243 ◽

Cited By ~ 2

Author(s):

K. Nashimoto ◽

D. K. Fork ◽

F. A. Ponce ◽

T. H. Geballe

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Epitaxial Growth ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Buffer Layers ◽

Laser Deposition ◽

Hrtem Observation ◽

Device Applications ◽

Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

Download Full-text