Deposition of Epitaxial Titanium Carbide Films on MgO(001) and 6H–SiC(0001) by Coevaporation of Ti and C60

1999 ◽  
Vol 14 (4) ◽  
pp. 1589-1596 ◽  
Author(s):  
Lars Norin ◽  
Jun Lu ◽  
Ulf Jansson ◽  
Jan-Olle Malm
Keyword(s):  
Growth Direction ◽  
Epitaxial Films ◽  
Low Energy ◽  
X Ray Diffraction ◽  
Columnar Microstructure ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Transmission Electron ◽  
Low Energy Electron ◽  
Ti Films

Epitaxial films of TiC1-x (0.15 < x < 0.50) were deposited on MgO(001) and 6H–SiC(0001) at 250 and 400 °C by coevaporation of C60 and Ti. Films deposited on MgO(001) were single-crystalline down to deposition temperatures of at least 250 °C as determined by x-`ray diffraction (XRD), low energy electron diffraction (LEED), and transmission electron microscopy (TEM). Films deposited on 6H–SiC(0001) were also epitaxial at 250 °C, but TEM showed a columnar microstructure due to the occurrence of twinned domains in the [111] growth direction normal to the substrate.

Growth of MBE-Codeposited IrSi3 on Si(111) and Si(100)

1994 ◽  
Vol 299 ◽  
Author(s):  
Gary A. Gibson ◽  
Davis A. Lange ◽  
Charles M. Falco
Keyword(s):  
Ion Beam ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Growth Modes ◽  
Transmission Electron ◽  
Low Energy Electron

AbstractWe have used Molecular Beam Epitaxy (MBE) to successfully grow films that are predominantly IrSi3 on both Si(111) and Si(100) substrates by codeposition of Si and Ir in a 3:1 ratio. Bragg-Brentano and Seemann-Bohlin x-ray diffraction reveal that polycrystalline IrSi3 films form as low as 450 °C. This is the lowest temperature yet reported for growth of this iridium silicide phase. These x-ray diffraction techniques, along with Transmission Electron Microscope (TEM) diffraction and in situ Low Energy Electron Diffraction (LEED), show that at higher deposition temperatures codeposition can form IrSi3 films on Si(111) that consist predominantly of a single epitaxial growth orientation. Ion beam channeling and x-ray rocking curves show that the epitaxial quality of IrSi3 films deposited on Si(111) is superior to that of IrSi3 films deposited on Si(100). We also present evidence for several new epitaxial IrSi3 growth modes on Si(111) and Si(100).

Epitaxial Films of Cobalt Disilicide (100) Evaporated onto Si (100) from a Mixed Source

1995 ◽  
Vol 402 ◽  
Author(s):  
P. T. Goeller ◽  
Z. Wang ◽  
D. E. Sayers ◽  
J. T. Glass ◽  
R. J. Nemanich
Keyword(s):  
Photoelectron Spectroscopy ◽  
Epitaxial Films ◽  
Cobalt Disilicide ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Transmission Electron ◽  
Low Energy Electron ◽  
Variant Analysis ◽  
Diffraction Patterns ◽  
X Ray Absorption

AbstractThin films of (100) oriented CoSi2 have been electron beam evaporated onto Si(100)substrates from a mixed Co-Si target. A sharp c(2×2) low energy electron diffraction (LEED)pattern resulted after annealing the films to 800°C. Extended x-ray absorption fine structure (EXAFS) of the film indicated the phase to be CoSi2. Quantitative x-ray photoelectron spectroscopy (XPS) analysis revealed the surface of the film to be slightly Si rich, indicating the Si terminated CoSi2 variant. Analysis of transmission electron microscope (TEM) diffraction patterns also provided evidence of the (100) orientation of the film.

scholarly journals Surface structure of Bi2Se3(111) determined by low-energy electron diffraction and surface x-ray diffraction

2013 ◽  
Vol 88 (4) ◽  
Author(s):  
Diogo Duarte dos Reis ◽  
Lucas Barreto ◽  
Marco Bianchi ◽  
Guilherme Almeida Silva Ribeiro ◽  
Edmar Avellar Soares ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Surface Structure ◽  
Low Energy ◽  
Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

Molecular Beam Epitaxy of GexSi1-x/(Si, Ge) Strained-Layer Heterostructures and Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
J. C. Bean
Keyword(s):  
X Ray Diffraction ◽  
Modulation Doping ◽  
Cross Sectional ◽  
X Ray ◽  
Strained Layer ◽  
Low Energy Electron Diffraction ◽  
Transmission Electron ◽  
New Findings ◽  
Low Energy Electron ◽  
Evaluation Techniques

AbstractThis paper reviews recent work on GexSi1-x/Si(100) strained-layer epitaxy and reports new findings on GexSi1-x/Si(111) and GexSil1-x/Ge(100) growth as well as results on modulation doping. Layer synthesis and evaluation techniques are described along with tabulations of strain and critical layer thickness data. Evaluation techniques include Low Energy Electron Diffraction, Rutherford backscattering, X-ray diffraction, Raman scattering and cross-sectional Transmission Electron Microscopy. Synthesized structures range from simple heterojunctions to 100 period superlattices.

Van Der Waals Epitaxy of GaSe on WSe2

1992 ◽  
Vol 263 ◽  
Author(s):  
O. Lang ◽  
R. Schlaf ◽  
Y. Tomm ◽  
C. Pettenkofer ◽  
W. Jaegermann
Keyword(s):  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Van Der Waals ◽  
Low Energy ◽  
Scanning Tunneling ◽  
X Ray Diffraction ◽  
Tunneling Microscopy ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

ABSTRACTGaSe layers were grown on the van der Waals (0001) planes of WSe2 (van der Waals epitaxy). The substrate (0001) plane was cleaned in UHV by heating to 400°C. GaSe was deposited from resistively heated Knudsen cells at T=300° C. After annealing at 450°C an epitaxial GaSe overlayer is formed as evidenced by X-ray diffraction, scanning tunneling microscopy, low energy electron diffraction and photoelectron spectroscopy.

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100)

2005 ◽  
Vol 483-485 ◽  
pp. 547-550 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Lothar Ley ◽  
A. Tadich ◽  
L. Broekman ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Electron Diffraction ◽  
Photoelectron Spectroscopy ◽  
Low Energy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Surface Band ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Different Temperatures ◽  
Low Energy Electron

We have investigated Si-rich reconstructions of 4H-SiC( 00 1 1 ) surfaces by means of low-energy electron diffraction (LEED), x-ray photoelectron spectroscopy (XPS), and angleresolved ultraviolet photoelectron spectroscopy (ARUPS). The reconstructions of 4H-SiC( 00 1 1 ) were prepared by annealing the sample at different temperatures in a flux of Si. Depending on the temperature different reconstructions were observed: c(2×2) at T=800°C, c(2×4) at T=840°C. Both reconstructions show strong similarities in the electronic structure.

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