Molecular Beam Epitaxy of GexSi1-x/(Si, Ge) Strained-Layer Heterostructures and Superlattices

1984 ◽  
Vol 37 ◽  
Author(s):  
J. C. Bean
Keyword(s):  
X Ray Diffraction ◽  
Modulation Doping ◽  
Cross Sectional ◽  
X Ray ◽  
Strained Layer ◽  
Low Energy Electron Diffraction ◽  
Transmission Electron ◽  
New Findings ◽  
Low Energy Electron ◽  
Evaluation Techniques

AbstractThis paper reviews recent work on GexSi1-x/Si(100) strained-layer epitaxy and reports new findings on GexSi1-x/Si(111) and GexSil1-x/Ge(100) growth as well as results on modulation doping. Layer synthesis and evaluation techniques are described along with tabulations of strain and critical layer thickness data. Evaluation techniques include Low Energy Electron Diffraction, Rutherford backscattering, X-ray diffraction, Raman scattering and cross-sectional Transmission Electron Microscopy. Synthesized structures range from simple heterojunctions to 100 period superlattices.

Growth of MBE-Codeposited IrSi3 on Si(111) and Si(100)

1994 ◽  
Vol 299 ◽  
Author(s):  
Gary A. Gibson ◽  
Davis A. Lange ◽  
Charles M. Falco
Keyword(s):  
Ion Beam ◽  
Silicide Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Growth Modes ◽  
Transmission Electron ◽  
Low Energy Electron

AbstractWe have used Molecular Beam Epitaxy (MBE) to successfully grow films that are predominantly IrSi3 on both Si(111) and Si(100) substrates by codeposition of Si and Ir in a 3:1 ratio. Bragg-Brentano and Seemann-Bohlin x-ray diffraction reveal that polycrystalline IrSi3 films form as low as 450 °C. This is the lowest temperature yet reported for growth of this iridium silicide phase. These x-ray diffraction techniques, along with Transmission Electron Microscope (TEM) diffraction and in situ Low Energy Electron Diffraction (LEED), show that at higher deposition temperatures codeposition can form IrSi3 films on Si(111) that consist predominantly of a single epitaxial growth orientation. Ion beam channeling and x-ray rocking curves show that the epitaxial quality of IrSi3 films deposited on Si(111) is superior to that of IrSi3 films deposited on Si(100). We also present evidence for several new epitaxial IrSi3 growth modes on Si(111) and Si(100).

Deposition of Epitaxial Titanium Carbide Films on MgO(001) and 6H–SiC(0001) by Coevaporation of Ti and C60

1999 ◽  
Vol 14 (4) ◽  
pp. 1589-1596 ◽  
Author(s):  
Lars Norin ◽  
Jun Lu ◽  
Ulf Jansson ◽  
Jan-Olle Malm
Keyword(s):  
Growth Direction ◽  
Epitaxial Films ◽  
Low Energy ◽  
X Ray Diffraction ◽  
Columnar Microstructure ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Transmission Electron ◽  
Low Energy Electron ◽  
Ti Films

Epitaxial films of TiC1-x (0.15 < x < 0.50) were deposited on MgO(001) and 6H–SiC(0001) at 250 and 400 °C by coevaporation of C60 and Ti. Films deposited on MgO(001) were single-crystalline down to deposition temperatures of at least 250 °C as determined by x-`ray diffraction (XRD), low energy electron diffraction (LEED), and transmission electron microscopy (TEM). Films deposited on 6H–SiC(0001) were also epitaxial at 250 °C, but TEM showed a columnar microstructure due to the occurrence of twinned domains in the [111] growth direction normal to the substrate.

scholarly journals The Reliability Improvement of Cu Interconnection by the Control of Crystallizedα-Ta/TaNxDiffusion Barrier

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Lin Wang ◽  
Chia-Ti Wang ◽  
Wei-Chun Chen ◽  
Kuo-Tzu Peng ◽  
Ming-Hsin Yeh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Practical Application ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Reliability Improvement ◽  
N Concentration ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interconnection Structure

Ta/TaN bilayers have been deposited by a commercial self-ionized plasma (SIP) system. The microstructures of Ta/TaN bilayers have been systematically characterized by X-ray diffraction patterns and cross-sectional transmission electron microscopy. TaN films deposited by SIP system are amorphous. The crystalline behavior of Ta film can be controlled by the N concentration of underlying TaN film. On amorphous TaN film with low N concentration, overdeposited Ta film is the mixture ofα- andβ-phases with amorphous-like structure. Increasing the N concentration of amorphous TaN underlayer successfully leads upper Ta film to form pureα-phase. For the practical application, the electrical property and reliability of Cu interconnection structure have been investigated by utilizing various types of Ta/TaN diffusion barrier. The diffusion barrier fabricated by the combination of crystallizedα-Ta and TaN with high N concentration efficiently reduces the KRc and improves the EM resistance of Cu interconnection structure.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

Cross-Sectional TEM Study Of Phase Separation In Reaction Of Ni-Ta Films With GaAs

1985 ◽  
Vol 54 ◽  
Author(s):  
A. Lahav ◽  
M. Eizenberg ◽  
Y. Komem
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
Phase Separation ◽  
Gaas Substrate ◽  
Auger Spectroscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTThe reaction between Ni60Ta40 amorphous alloy and (001) GaAs was studied by cross-sectional transmission electron microscopy, Auger spectroscopy, and x-ray diffraction. At 400°C formation of Ni GaAs at the interface with GaAs was observed. After heat treatment at 600°C in vacuum a layered structure of TaAs/NiGa/GaAs has been formed. The NiGa layer has epitaxial relations to the GaAs substrate. The vertical phase separation can be explained by opposite diffusion directions of nickel and arsenic atoms.

Evolution of Nanoindentation Hardness of Fe/Cu Nanometer-Scale Multilayers by Magnetron Sputtering

2008 ◽  
Vol 373-374 ◽  
pp. 104-107 ◽  
Author(s):  
J. Gao ◽  
Z.L. Wu ◽  
Z.P. Zhang ◽  
B.S. Cao ◽  
M.K. Lei
Keyword(s):  
Magnetron Sputtering ◽  
Nanometer Scale ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Modulus Difference ◽  
Nanoindentation Hardness ◽  
Modulation Wavelength ◽  
Peak Value

Fe/Cu nanometer-scale multilayers with nominal modulation wavelengths ranging from 5 to 40 nm are deposited by direct current magnetron sputtering on Si (100) substrates. Modulation structures of the multilayers are examined by small angle / wide angle x-ray diffraction (SA/WAXRD) and cross-sectional transmission electron microscopy (XTEM). Hardness of the multilayers is measured by using nanoindentation. All the multilayers have Fe (110) and Cu (111) textures. Interface coherency is observed in the multilayers with designed modulation wavelengths of 5 and 10 nm. The hardness increases firstly and then deceases with increasing the modulation wavelength, and reaches peak value of 7.29±0.29 GPa in the multilayers with nominal modulation wavelength of 10 nm. The evolution of the hardness of the mulitlayers is explained by interface width and modulus difference between sublayers.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Structural characterization and thermal stability of W/Si multilayers

1993 ◽  
Vol 8 (10) ◽  
pp. 2600-2607 ◽  
Author(s):  
M. Brunel ◽  
S. Enzo ◽  
M. Jergel ◽  
S. Luby ◽  
E. Majkova ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Layer Thickness ◽  
Thickness Ratio ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Layer Thickness Ratio ◽  
Transmission Electron ◽  
Thermal Stability Of ◽  
Beam Deposition

Tungsten/silicon multilayers with tungsten layers of a thickness of 1–2 nm were prepared by means of electron beam deposition. Their structure and thermal stability under rapid thermal annealing were investigated by a combination of x-ray diffraction techniques and cross-sectional transmission electron microscopy. The crystallization behavior was found to depend on the interdiffusion and mixing at the tungsten/silicon interfaces during deposition as well as during annealing. The as-deposited tungsten/silicon multilayers were amorphous and remained stable after annealing at 250 °C/40 s. Interdiffusion and crystallization occurred after annealing all samples from 500 °C/40 s up to 1000 °C/20 s. By performing the same heat treatment in the tungsten/silicon multilayers, the formation of body-centered cubic W was observed with a layer thickness ratio δW/δsi = 1, whereas tetragonal WSi2 was detected in tungsten/silicon multilayers with a layer thickness ratio of δw/δsi ∼0.25. This dependence of the crystallization products on the layer thickness ratio δw/δsi originates from the different phenomena of interdiffusion and mixing at the tungsten/silicon interfaces. The possible formation of bcc tungsten as a first stage of crystallization of tungsten-silicon amorphous phase, rich in tungsten, is discussed.

Stress Gradients Observed in Cu Thin Films Induced by Capping Layers

2009 ◽  
Vol 1156 ◽  
Author(s):  
Conal E. Murray ◽  
Paul R. Besser ◽  
Christian Witt ◽  
Jean L. Jordan-Sweet
Keyword(s):  
Deposition Temperature ◽  
Morphological Changes ◽  
Film Surface ◽  
Stress Distributions ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Cu Films ◽  
Transmission Electron ◽  
Cu Film

AbstractGlancing-incidence X-ray diffraction (GIXRD) has been applied to the investigation of depth-dependent stress distributions within electroplated Cu films due to overlying capping layers. 0.65 μm thick Cu films plated on conventional barrier and seed layers received a CVD SiCxNyHz cap, an electrolessly-deposited CoWP layer, or a CoWP layer followed by a SiCxNyHz cap. GIXRD and conventional X-ray diffraction measurements revealed that strain gradients were created in Cu films possessing a SiCxNyHz cap, where a greater in-plane tensile stress was generated near the film / cap interface. The constraint imposed by the SiCxNyHz layer during cooling from the cap deposition temperature led to an increase in the in-plane stress of approximately 180 MPa from the value measured in the bulk Cu. However, Cu films possessing a CoWP cap without a SiCxNyHz layer did not exhibit depth-dependent stress distributions. Because the CoWP capping deposition temperature was much lower than that employed in SiCxNyHz deposition, the Cu experienced elastic deformation during the capping process. Cross-sectional transmission electron microscopy indicated that the top surface of the Cu films exhibited extrusions near grain boundaries for the samples undergoing the thermal excursion during SiCxNyHz deposition. The conformal nature of these caps confirmed that the morphological changes of the Cu film surface occurred prior to capping and are a consequence of the thermal excursions associated with cap deposition.

An X-ray Photoelectron Spectroscopie Study of B-N-Ti system

1997 ◽  
Vol 472 ◽  
Author(s):  
Sudipta Seal ◽  
Tery L. Barr ◽  
Natalie Sobczak ◽  
Ewa Benko ◽  
J. Morgiel
Keyword(s):  
Photoelectron Spectroscopy ◽  
Industrial Applications ◽  
General Interest ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Wear And Corrosion ◽  
Interfacial Growth ◽  
Wear And Corrosion Resistance

ABSTRACTComposite nitrides (such as BN, TiN) are widely used in various industrial applications because of their extreme wear and corrosion resistance, thermal and electrical properties. In order to obtain composite materials with mese optimal properties, it is important to elucidate whether any chemical reactions occur at nitride/metal interfaces, e.g., those involving BN-Ti/TiN. Materials of interest include the deposition by PVD of Ti and TiN on BN substrates. Some of these systems were then subjected to varying degrees of physical and thermal alteration. Detailed X-ray photoelectron spectroscopy (XPS) has merefore been rendered of these interfaces using cross-sectional display and sputter etching. Resulting structural and morphological features have been investigated with transmission electron microscopy (TEM) and X-ray diffraction (XRD). Diffusion of the nitridation, oxynitride formation and interfacial growth are of general interest.

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