Aluminum metallization for flat-panel displays using ion-beam-assisted physical vapor deposition

1999 ◽  
Vol 14 (10) ◽  
pp. 4051-4061 ◽  
Author(s):  
Zhenqiang Ma ◽  
Gary S. Was
Keyword(s):  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Ion Beam ◽  
Surface Topology ◽  
Aluminum Films ◽  
Force Microscopy ◽  
Ion Beam Assisted Deposition ◽  
Out Of Plane ◽  
Aluminum Metallization ◽  
Display Control

Failures in aluminum interconnects in display control devices are often caused by the formation of hillocks during postdeposition annealing. Ion-beam-assisted deposition was used to create a (110) out-of-plane texture in aluminum films to suppress hillocking. X-ray diffraction was used to quantify the (110)/(111) out-of-plane texture ratio, and scanning electron microscopy and atomic force microscopy were used to characterize the surface topology. Results show that no hillocks were observed on (110)-textured aluminum films following annealing for 30 min at 450 °C. Following annealing, the resistivity of the films made by ion-beam-assisted deposition recovered to within a factor of 2 of the physical-vapor-deposition films. Results show that ion-beam-assisted deposition can effectiv09ely modify the aluminum out-of-plane texture in such a way that hillock suppression can be achieved without significant change in resistivity.

Ion-Beam Assist Nano-Texturing of Films

2007 ◽  
Vol 1020 ◽  
Author(s):  
Vladimir Matias ◽  
Chris Sheehan ◽  
Alp T. Findikoglu
Keyword(s):  
Experimental Design ◽  
Single Crystal ◽  
Ion Beam ◽  
Fabrication Method ◽  
Polycrystalline Metal ◽  
Tape Transport ◽  
Homoepitaxial Growth ◽  
Ion Beam Assisted Deposition ◽  
High Throughput Experimentation ◽  
Out Of Plane

AbstractWe present an ion-beam based fabrication method for growth of single-crystal-like films that does not utilize epitaxy on single crystal substrates. We use ion-beam assisted texturing to obtain biaxial crystalline alignment in a film. This ion-beam assisted deposition (IBAD) texturing can be done on arbitrary, but smooth substrates, including flexible polycrystalline metal tapes. With IBAD texturing of MgO and subsequent homoepitaxial growth we have demonstrated an in-plane mosaic spread FWHM as low as 2° and out-of-plane alignment of 1°. The deposition system we use includes reel-to-reel tape transport for a linear transport of substrate materials through the deposition zones. This allows for high-throughput experimentation via a linear combinatorial experimental design.

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

Significant texture improvement in single-crystalline-like materials on low-cost flexible metal foils through growth of silver thin films

2019 ◽  
Vol 52 (4) ◽  
pp. 898-902 ◽  
Author(s):  
Yongkuan Li ◽  
Sicong Sun ◽  
Ying Gao ◽  
Yao Yao ◽  
Eduard Galstyan ◽  
...  
Keyword(s):  
High Performance ◽  
Low Cost ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Single Crystalline ◽  
Metal Foils ◽  
Ion Beam Assisted Deposition ◽  
Out Of Plane ◽  
Flexible Metal ◽  
Ag Film

Low texture spreads of single-crystalline-like materials are critical for high performance of low-cost flexible semiconductors and second-generation high-temperature superconductors based on metal foils. For texture improvement, a single-crystalline-like Ag film is epitaxially grown on an ion-beam-assisted deposition TiN substrate using magnetron sputtering. Ultra-low texture spreads are found in the thin Ag film (∼330 nm), with an out-of-plane texture spread (Δω) of ∼1.03° and an in-plane texture spread (Δϕ) of ∼1.34°. Compared with the texture spreads of the TiN substrate, Δω and Δϕ of the Ag film are reduced by ∼42 and ∼79%, respectively. Applying this Ag buffer, the texture spreads of a single-crystalline-like Ge film are reduced by ∼37% (Δω) and ∼36% (Δϕ). Factors contributing to the texture improvement by Ag are studied using single-crystalline-like Ag films with various thicknesses.

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