Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

scholarly journals Growth of U-Shaped Graphene Domains on Copper Foil by Chemical Vapor Deposition

Materials ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 1887
Author(s):  
Ming Pan ◽  
Chen Wang ◽  
Hua-Fei Li ◽  
Ning Xie ◽  
Ping Wu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Morphology Evolution ◽  
Force Microscopy ◽  
Smooth Edge ◽  
Transmission Electron

U-shaped graphene domains have been prepared on a copper substrate by chemical vapor deposition (CVD), which can be precisely tuned for the shape of graphene domains by optimizing the growth parameters. The U-shaped graphene is characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman. These show that the U-shaped graphene has a smooth edge, which is beneficial to the seamless stitching of adjacent graphene domains. We also studied the morphology evolution of graphene by varying the flow rate of hydrogen. These findings are more conducive to the study of morphology evolution, nucleation, and growth of graphene domains on the copper substrate.

Comparison of Aluminum Nitride Nanowire Growth with and without Catalysts via Chemical Vapor Deposition

2011 ◽  
Vol 1324 ◽  
Author(s):  
Kasif Teker ◽  
Joseph A. Oxenham
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Systematic Investigation ◽  
Efficient Catalyst ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Direct Nitridation ◽  
20 Nm

ABSTRACTThis paper presents a systematic investigation of AlN nanowire synthesis by chemical vapor deposition using Al and NH3 on SiO2/Si substrate and direct nitridation of mixture of Al-Al2O3 by NH3. A wide variety of catalyst materials, in both discrete nanoparticle and thin film forms, have been used (Co, Au, Ni, and Fe). The growth runs have been carried out at temperatures between 800 and 1100oC mainly under H2 as carrier gas. It was found that the most efficient catalyst in terms of nanowire formation yield was 20-nm Ni film. The AlN nanowire diameters are about 20-30 nm, about the same thickness as the Ni-film. Further studies of direct nitridation of mixture of Al-Al2O3 by NH3 have resulted in high density one-dimensional nanostructure networks at 1100oC. It was observed that catalyst-free nanostructures resulted from the direct nitridation were significantly longer than that with catalysts. The analysis of the grown nanowires has been carried out by scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and x-ray diffraction.

Novel Electromigration Failure Mechanism for Aluminium-Based Metallization on Titanium Substrate

1998 ◽  
Vol 516 ◽  
Author(s):  
G. Girardi ◽  
C. Caprile ◽  
F. Cazzaniga ◽  
L. Riva
Keyword(s):  
Electron Microscopy ◽  
Grain Growth ◽  
Ion Beam ◽  
Titanium Substrate ◽  
Vertical Direction ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Focus Ion Beam

AbstractIn this paper a phenomenological characterisation of an anomalous grain growth, observed after classical electromigration lifetests, on Al-l%Si-0.5%Cu multigrain stripes, deposited at high temperature (460°C) on a Ti substrate, is reported. Failure analysis, carried out by Scanning Electron Microscopy (SEM) and Focus Ion Beam (FIB), has detected an abnormal single-grain growth in the vertical direction, starting from the Ti/Al interface. Medium Time to Failure (MTF) data are compared with those of stripes on Ti/TiN substrate, on which no grain growth was observed. The growth of the anomalous grains has been related to the Ti/Al interface properties. Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD) and Atomic Force Microscopy (AFM) analyses concurrently show a higher texture of the film on the Ti, compared with the film on the Ti/TiN substrate. The tight columnar orientation of grain boundaries strongly limits the mechanism of grain boundary diffusion during electromigration stress. The atomic flux is then forced to take place at the Ti/Al interface, where the epitaxial growth of the Al single grains is favoured.

scholarly journals Structure and Mechanical Properties of PVD and CVD TiAlSiN Coatings Deposited on Cemented Carbide

Crystals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 598
Author(s):  
Liying Wu ◽  
Lianchang Qiu ◽  
Yong Du ◽  
Fangfang Zeng ◽  
Qiang Lu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mechanical Properties ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Energy Dispersive Spectrometer ◽  
Chemical Vapor ◽  
Cemented Carbide ◽  
Transmission Electron ◽  
Pressure Chemical

This work reports the results of our investigation of the structure and mechanical properties of physical vapor deposition (PVD) and chemical vapor deposition (CVD) TiAlSiN coatings deposited on cemented carbide substrates. For the first time, a novel nanocomposite of Ti0.13Al0.85Si0.02N coating deposited from TiCl4-AlCl3-SiCl4-NH3-H2 gas precursors was prepared by low pressure chemical vapor deposition (LPCVD) at 780 °C and a pressure of 60 mbar, while PVD Ti0.31Al0.60Si0.09N coating was prepared using the arc ion plating method. The investigation results including morphology, microstructure, chemical composition, phase component, and hardness were carried out by scanning electron microscopy (SEM) equipped with energy dispersive spectrometer (EDS), transmission electron microscopy (TEM), X-ray diffraction (XRD), and nano-indentator. TEM results revealed that both PVD and CVD TiAlSiN coatings consisted of nanocrystalline embedded in SiNx amorphous. The nanohardness of CVD Ti0.13Al0.85Si0.02N coating obtained in this work was 31.7 ± 1.4 GPa, which was 35% higher than that of the PVD Ti0.31Al0.60Si0.09N coating.

Growth of Ultra-High Density 3C-SiC Nanowires via Single Source CVD

2011 ◽  
Vol 1350 ◽  
Author(s):  
Kasif Teker ◽  
Joseph A. Oxenham
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor ◽  
Iron Film ◽  
X Ray Diffraction ◽  
Lower Efficiency ◽  
Force Microscopy ◽  
High Temperature Electronics ◽  
Sic Nanowires ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTSilicon carbide (SiC) nanostructures attract interest due to their applications in optoelectronic devices, sensors, and high-power/high temperature electronics. The synthesis of SiC nanowires by chemical vapor deposition using hexamethyldisilane (HMDS) as a source material on SiO2/Si substrate has been investigated. Various catalyst materials, including iron (film and nanoparticles), nickel (film and nanoparticles), and cobalt nanoparticles have been used. The growth runs have been carried out at temperatures between 900 and 1100°C under H2 as carrier gas. 3C-SiC nanowires have successfully been grown at even lower temperatures despite the lower efficiency of source decomposition at low temperatures. The SiC nanowire diameters are in the range of 8 nm to 60 nm, as determined by transmission electron microscopy (TEM). In general, the efficiency of nanowire growth has increased with temperature except the growth on Ni film, which has occasionally resulted in SiC flowers. Higher nanowire density at high temperatures can be attributed to more efficient decomposition of the source at higher temperatures. Further, optical properties of the nanowires have been studied by Fourier transform infrared spectroscopy (FTIR). The fabricated nanowires have also been characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), and x-ray diffraction (XRD).

Poly(meta-phenylene isophthalamide) nanofibers: Coating and post processing

2002 ◽  
Vol 17 (12) ◽  
pp. 3206-3212 ◽  
Author(s):  
Wenxia Liu ◽  
Matthew Graham ◽  
Edward A. Evans ◽  
Darrell H. Reneker
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Electrospun Nanofibers ◽  
Post Processing ◽  
Good Thermal Stability ◽  
Nanoscale Structures ◽  
Transmission Electron ◽  
Deposited Films

Electrospun nanofibers have applications in the areas of filtration, composites, biomaterials, and electronics. Controlling the surface properties of these nanofibers is important for many applications. Nanofibers can also be used as unique substrates for observing the growth of deposited films and creating nanoscale structures. In this work, electrospun poly(meta-phenylene isophthalamide) (MPD-I) nanofibers were used as substrates for creating nanoscale structures out of carbon-based materials and metals. MPD-I was used because it can be electrospun into nanofibers with diameters smaller than 10 nm and it has good thermal stability. MPD-I nanofibers were coated with carbon, copper, and aluminum using plasma enhanced chemical vapor deposition and physical vapor deposition methods. Some of the aluminum-coated nanofibers were then converted into nanotubes. Transmission electron microscopy was used to determine the thickness, uniformity, and grain size of the coatings on the fibers and the nanotubes.

A Comparative Study of the Synthesis of Carbon Nanotubes Using Ni and Fe as Catalyst

2009 ◽  
Vol 67 ◽  
pp. 89-94 ◽  
Author(s):  
Joydip Sengupta ◽  
Sovan Kumar Panda ◽  
Chacko Jacob
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Raman Spectroscopic ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Synthesis Of Carbon Nanotubes

The effect of Fe and Ni catalysts on the synthesis of carbon nanotubes (CNTs) using atmospheric pressure chemical vapor deposition (APCVD) was investigated. Distribution of the catalyst particles over the Si substrate was analyzed by atomic force microscopy (AFM). Characterization by X-ray diffraction analysis (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopic measurements over the grown species is reported. The study clearly shows that the catalyst strongly influences morphology and microstructure of the grown CNTs.

scholarly journals Influence of duration time of CVD process on emissive properties of carbon nanotubes films

2015 ◽  
Vol 33 (1) ◽  
pp. 36-46
Author(s):  
Izabela Stępinska ◽  
Mirosław Kozłowski ◽  
Joanna Radomska ◽  
Halina Wronka ◽  
Elżbieta Czerwosz ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Electron Emission ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Second Step ◽  
Step Method ◽  
Transmission Electron ◽  
Deposition Step

AbstractIn this paper various types of films made of carbon nanotubes (CNTs) are presented. These films were prepared on different substrates (Al2O3, Si n-type) by the two-step method. The two-step method consists of physical vapor deposition step, followed by chemical vapor deposition step (PVD/CVD). Parameters of PVD process were the same for all initial films, while the duration times of the second step - the CVD process, were different (15, 30 min.). Prepared films were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and field emission (FE) measurements. The I-E and F-N characteristics of electron emission were discussed in terms of various forms of CNT films. The value of threshold electric field ranged from few V/μm (for CNT dispersed rarely on the surface of the film deposited on Si) up to ~20 V/μm (for Al2O3 substrate).

Transmission Electron Microscopy (TEM) Specimen Preparation Technique using Focused Ion Beam (FIB): Application to Material Characterization of Chemical Vapor Deposition of Tungsten (W) and Tungsten Silicides (WSix)

1997 ◽  
Author(s):  
K. Doong ◽  
J.-M. Fu ◽  
Y.-C. Huang
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Chemical Vapor ◽  
Specimen Preparation ◽  
Preparation Technique ◽  
Transmission Electron

Abstract The specimen preparation technique using focused ion beam (FIB) to generate cross-sectional transmission electron microscopy (XTEM) samples of chemical vapor deposition (CVD) of Tungsten-plug (W-plug) and Tungsten Silicides (WSix) was studied. Using the combination method including two axes tilting[l], gas enhanced focused ion beam milling[2] and sacrificial metal coating on both sides of electron transmission membrane[3], it was possible to prepare a sample with minimal thickness (less than 1000 A) to get high spatial resolution in TEM observation. Based on this novel thinning technique, some applications such as XTEM observation of W-plug with different aspect ratio (I - 6), and the grain structure of CVD W-plug and CVD WSix were done. Also the problems and artifacts of XTEM sample preparation of high Z-factor material such as CVD W-plug and CVD WSix were given and the ways to avoid or minimize them were suggested.

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