X-ray diffraction and transmission electron microscopy analysis of ordering and structure in Al1−xInxAs thin films

2000 ◽  
Vol 15 (1) ◽  
pp. 45-55 ◽  
Author(s):  
R. L. Forrest ◽  
J. Kulik ◽  
T. D. Golding ◽  
S. C. Moss

This paper presents an x-ray diffraction and transmission electron microscopy analysis of Al1−xInxAs grown by molecular beam epitaxy. Two samples grown on (001) InP at temperatures of 370 and 400 °C are characterized. The first, which contains a high density of twin lamellae, exhibits triple-period short-range ordering with a rather short correlation range normal to the (111) planes. Within these (individual) planes, the concentration, however, is uniform over a considerably greater distance, leading to a highly anisotropic scattering. This is the first observation of triple-period short-range ordering in a sample that exhibits 2 × 1 surface reconstruction. The second sample exhibits CuPt-type short-range ordering with scattering that is significantly streaked, suggestive of lamellar-shaped ordered domains. Both samples contain high densities of stacking faults leading to additional sharp streaking along symmetry-allowed 〈111〉 directions.

1999 ◽  
Vol 13 (09n10) ◽  
pp. 1005-1010 ◽  
Author(s):  
C. Beneduce ◽  
F. Bobba ◽  
M. Boffa ◽  
M. C. Cucolo ◽  
A. M. Cucolo ◽  
...  

We report on the preparation and characterization of YBa 2 Cu 3 O 7-x/ PrBa 2 Cu 3 O 7-x bilayers onto (100) SrTiO 3 substrates. The samples have been prepared by sequential dc sputtering processes in high oxygen pressure from stoichiometric targets. The structural characterization of the YBa 2 Cu 3 O 7-x and PrBa 2 Cu 3 O 7-x films and of the bilayers has been performed by means of X-ray diffraction. The Scanning Electron Microscopy analysis has showed that the film surfaces are flat and free of precipitates. A detailed study of the interfaces has been performed by Transmission Electron Microscopy analysis. The electrical resistivity measurements showed for the YBa 2 Cu 3 O 7-x films sharp superconducting transitions at 91.5 K and critical current density of about 106 A/cm 2 at 77 K, while for the PrBa 2 Cu 3 O 7-x films a semiconductor-like behavior has been observed.


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