Preparation and Characterization of Pb(Zr0.52Ti0.48)O3 Powders and Thin Films by a Sol-gel Route

2000 ◽  
Vol 15 (6) ◽  
pp. 1336-1341 ◽  
Author(s):  
Dage Liu ◽  
Hongxi Zhang ◽  
Zhong Wang ◽  
Liancheng Zhao

Lead zirconate titanate [Pb(ZrxTi1−x)O3 (PZT)] powders and ferroelectric thin films with a composition near the morphotropic phase boundary [Pb(Zr0.52Ti0.48)O3] were prepared by a modified sol-gel process using zirconium oxynitrate-2-hydrate as the zirconium source and ethylene glycol as solvent. The precursor solution was prepared from lead acetate-3-hydrate, tetrabutyl titanate, and zirconium oxynitrate-2-hydrate. Perovskite PZT powders were obtained after sintering at 450 °C for 2 h. Films rapid-thermally annealed at 650 °C for 1 min formed well-crystallized perovskite.Microstructures of these films indicated the presence of nano-sized grains (∼50 nm). The remnant polarization was 28.5 μC/cm2, and the coercive field was 39.8 kV/cm. Ferroelectric polarization fatigue test of In/PZT/Pt/Ti/SiO2/Si showed a high fatigue resistance up to 3 × 1010 cycles before Pr decreased by 50%.

1999 ◽  
Vol 19 (6-7) ◽  
pp. 1403-1407 ◽  
Author(s):  
Aiying Wu ◽  
Paula M. Vilarinho ◽  
Isabel M.Miranda Salvado ◽  
João L. Baptista ◽  
C.M. de Jesus ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-9
Author(s):  
B. S. Li

Lead zirconate titanate (PZT) thin films with the morphotropic phase boundary composition (Zr/Ti = 52/48) have been prepared using a modified diol-based sol-gel route by introducing 1–5 mol% barium titanate (BT) nanoseeds into the precursor solution on platinized silicon substrates (Pt/Ti/SiO2/Si). Macroscopic electric properties of PZT film with nanoparticle showed a significant improvement of ferroelectric properties. This work aims at the systematic study of the local switching polarization behavior during fatigue in PZT films with and without nanoparticles by using very recent developed scanning piezoelectric microscopy (SPM). We show that the local fatigue performance, which is characterized by variations of local piezoloop with electric cycles, is significantly improved by adding some nanoseeds. It has been verified by scanning electron microscope (SEM) that the film grain morphology changes from columnar to granular structure with the addition of the nanoseeds. On the other hand, the existence of PtxPb transition phase, which existed in interface at early crystallization stage of pure PZT thin film, deteriorates the property of the interface. These microstructures and the interfaces of these films significantly affect the electrons injection occurred on the interfaces. The domain wall pinning induced by injected electrons and the succeeding penetration into the films is discussed to explain the fatigue performance.


2003 ◽  
Vol 42 (Part 1, No. 9B) ◽  
pp. 5936-5940 ◽  
Author(s):  
Zhan Jie Wang ◽  
Li Jun Yan ◽  
Yuki Aoki ◽  
Hiroyuki Kokawa ◽  
Ryutaro Maeda

2007 ◽  
Vol 280-283 ◽  
pp. 239-242 ◽  
Author(s):  
Wen Gong ◽  
Xiang Cheng Chu ◽  
Jing Feng Li ◽  
Zhi Lun Gui ◽  
Long Tu Li

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.


1991 ◽  
Vol 243 ◽  
Author(s):  
Keith G. Brooks ◽  
Jiayu Chen ◽  
K.R. Udayakumar ◽  
L. Eric Cross

AbstractThin films of antiferroelectric tetragonal (Pb.97 La.02 )(Zr1-x-yTixSny)O3 have been synthesized from acetate and alkoxide precursors via a sol-gel process. A multiple layer spin coating procedure was used to prepare 0.4 gtm films on platinized silicon wafers. Crystallization of the films as confirmed by x-ray diffraction was achieved by rapid thermal annealing at 700°C for 20 seconds. Antiferroelectric to ferroelectric phase switching threshold fields were determined from P-E hysteresis curves. Longitudinal strain is reported as a function of applied electric field, with a maximum strain of 1.6×10-3 measured at an applied dc bias field of 120 kV/cm on a film of composition Pb.97 La.02 (Zr.60Ti.l0Sn.30 )O3. These films show promise for micromechanical actuator applications due to the high strain associated with field forced antiferroelectric to ferroelectric phase switching.


1998 ◽  
Vol 83 (4) ◽  
pp. 2202-2208 ◽  
Author(s):  
S. A. Impey ◽  
Z. Huang ◽  
A. Patel ◽  
R. Beanland ◽  
N. M. Shorrocks ◽  
...  

2001 ◽  
Vol 40 (Part 1, No. 8) ◽  
pp. 5074-5078 ◽  
Author(s):  
Qi Zhang ◽  
Tianling Ren ◽  
Lintao Zhang ◽  
Jing Zhu ◽  
Zhijian Li

Sign in / Sign up

Export Citation Format

Share Document