Lead Zirconate Titanate Stannate Thin Films for Large Strain Microactuator Applications

1991 ◽  
Vol 243 ◽  
Author(s):  
Keith G. Brooks ◽  
Jiayu Chen ◽  
K.R. Udayakumar ◽  
L. Eric Cross
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Ferroelectric Phase ◽  
Large Strain ◽  
Sol Gel ◽  
Bias Field ◽  
Lead Zirconate ◽  
X Ray Diffraction ◽  
Phase Switching ◽  
Sol Gel Process

AbstractThin films of antiferroelectric tetragonal (Pb.97 La.02 )(Zr1-x-yTixSny)O3 have been synthesized from acetate and alkoxide precursors via a sol-gel process. A multiple layer spin coating procedure was used to prepare 0.4 gtm films on platinized silicon wafers. Crystallization of the films as confirmed by x-ray diffraction was achieved by rapid thermal annealing at 700°C for 20 seconds. Antiferroelectric to ferroelectric phase switching threshold fields were determined from P-E hysteresis curves. Longitudinal strain is reported as a function of applied electric field, with a maximum strain of 1.6×10-3 measured at an applied dc bias field of 120 kV/cm on a film of composition Pb.97 La.02 (Zr.60Ti.l0Sn.30 )O3. These films show promise for micromechanical actuator applications due to the high strain associated with field forced antiferroelectric to ferroelectric phase switching.

Influence of Film Thickness on Dielectric Properties of (Pb0.97La0.02)(Zr0.95Ti0.05)O3 Antiferroelectric Thin Films

2011 ◽  
Vol 194-196 ◽  
pp. 2467-2471
Author(s):  
Jun Liu ◽  
Jing Wang ◽  
Ya Ting Zhang ◽  
Wen Ping Geng ◽  
Xiu Jian Chou
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Film Thickness ◽  
Current Density ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Phase Switching ◽  
Sol Gel Process ◽  
Maximum Current ◽  
Plzt Thin Films

By the sol-gel process, Pb0.97La0.02(Zr0.95Ti0.05)O3(PLZT) antiferroelectric (AFE) thin films with different thicknesses were successfully deposited on Pt(111)/Ti/SiO2/Si(100) substrates. The phase structure of the PLZT antiferroelectric thin films was studied by X-ray diffraction (XRD) analyses. The electric field-induced AFE-FE phase transformation behavior of the PLZT thin films，was examined by polarization versus field (P-E) and relative permittivity versus field (C-E) measurements, with priority focused on thickness-dependent phase switching field. The current by the polarization and depolarization of polar in the PLZT films was measured through current density-electric field (J-E) measurement. With the increase of film thickness, the maximum polarization less and less, the maximum current density is increasing.

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers

2007 ◽  
Vol 280-283 ◽  
pp. 239-242 ◽  
Author(s):  
Wen Gong ◽  
Xiang Cheng Chu ◽  
Jing Feng Li ◽  
Zhi Lun Gui ◽  
Long Tu Li
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Wafers ◽  
Seeding Layer ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.

A Study on the Microstructure of Preferred Orientation of Lead Zirconate Titanate (PZT) Thin Films

1997 ◽  
Vol 12 (4) ◽  
pp. 1043-1047 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Kwangsoo No
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Preferred Orientation ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Zirconate Titanate

The lead zirconate titanate (PZT) thin films were fabricated using sol-gel spin coating onto Pt/Ti/glass substrates. Effects of the holding time for pyrolysis and the coating cycle on the preferred orientation of the PZT thin films were studied. The films were fabricated with different coating cycles (3, 5, 7, 9, 11), dried at 330 °C for different holding times (5, 30, 60 min), and then annealed at the same temperature of 650 °C using rapid thermal annealing (RTA). The preferred orientations of the films were investigated using x-ray diffraction and glancing angle x-ray diffraction. The microstructure and the selected area diffraction pattern of the PZT thin films were also investigated using scanning electron microscopy (SEM) and transmission electron microscopy (TEM), respectively.

Preparation and Characterization of Pb(Zr0.52Ti0.48)O3 Powders and Thin Films by a Sol-gel Route

2000 ◽  
Vol 15 (6) ◽  
pp. 1336-1341 ◽  
Author(s):  
Dage Liu ◽  
Hongxi Zhang ◽  
Zhong Wang ◽  
Liancheng Zhao
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Lead Acetate ◽  
Sol Gel ◽  
Precursor Solution ◽  
Lead Zirconate ◽  
Tetrabutyl Titanate ◽  
Sol Gel Process ◽  
High Fatigue

Lead zirconate titanate [Pb(ZrxTi1−x)O3 (PZT)] powders and ferroelectric thin films with a composition near the morphotropic phase boundary [Pb(Zr0.52Ti0.48)O3] were prepared by a modified sol-gel process using zirconium oxynitrate-2-hydrate as the zirconium source and ethylene glycol as solvent. The precursor solution was prepared from lead acetate-3-hydrate, tetrabutyl titanate, and zirconium oxynitrate-2-hydrate. Perovskite PZT powders were obtained after sintering at 450 °C for 2 h. Films rapid-thermally annealed at 650 °C for 1 min formed well-crystallized perovskite.Microstructures of these films indicated the presence of nano-sized grains (∼50 nm). The remnant polarization was 28.5 μC/cm2, and the coercive field was 39.8 kV/cm. Ferroelectric polarization fatigue test of In/PZT/Pt/Ti/SiO2/Si showed a high fatigue resistance up to 3 × 1010 cycles before Pr decreased by 50%.

Ferroelectric Thin Films on Silicon and Fused Silica Substrates by Sol-Gel Process

1990 ◽  
Vol 200 ◽  
Author(s):  
Yuhuan Xu ◽  
Ching Jih Chen ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Fused Silica ◽  
Ferroelectric Thin Films ◽  
Strontium Barium Niobate ◽  
Strontium Barium ◽  
Sol Gel Process ◽  
Silica Substrates

ABSTRACTFerroelectric thin films including undoped and doped PZT (lead zirconate titanate), BaTiO3 (barium titanate), SBN (strontium barium niobate), KNbO3 (potassium niobate), PBN (lead barium niobate), KNSBN (potassium sodium strontium barium niobate), and LiNbO3 (lithium niobate) were made on silicon and fused silica substrates by a sol-gel process. Microstructure and physical (pyroelectric, ferroelectric and optical) properties of these thin films were studied. Transparent and preferentially orientated SBN thin films on fused silica substrates can be obtained by applying a d.c. electric field during heat treatment. A heterojunction effect was observed in ferroelectric thin films on both n-silicon and p-silicon through measurement of I-V characteristics, and by the demonstration of a photocurrent effect.

Early Stages of Crystallization of Sol−Gel-Derived Lead Zirconate Titanate Thin Films

2003 ◽  
Vol 15 (5) ◽  
pp. 1147-1155 ◽  
Author(s):  
A. Wu ◽  
P. M. Vilarinho ◽  
I. Reaney ◽  
I. M. Miranda Salvado
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Early Stages ◽  
Zirconate Titanate

scholarly journals Interfacial mechanisms controlling phase formation in sol-gel derived lead zirconate titanate thin films

1994 ◽  
Vol 17 (6) ◽  
pp. 1005-1014 ◽  
Author(s):  
S B Majumder ◽  
V N Kulkarni ◽  
Y N Mohapatra ◽  
D C Agrawal
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Zirconate Titanate

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

Relationships Between Microstructure and Reliability in Pzt Mems

2001 ◽  
Vol 666 ◽  
Author(s):  
B.W. Olson ◽  
L.M. Randall ◽  
C.D. Richards ◽  
R.F. Richards ◽  
D.F. Bahr
Keyword(s):  
Grain Size ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Electrical Energy ◽  
Lead Zirconate ◽  
Fatigue Tests ◽  
Operating Conditions ◽  
Processing Route ◽  
Bulge Testing ◽  
Sol Gel Process

ABSTRACTPiezoelectric oxide films, such as lead zirconate titanate (PZT), are now being integrated into MEMS applications. Many PZT derived systems are deposited using a sol-gel process, which can be used in a microelectronics processing route using spin coating as the deposition method. An application of interest for PZT films is in power generation, where a flexing membrane is used to transform mechanical to electrical energy. The current study was undertaken to identify the relationships between the processing, microstructure, and mechanical reliability of these films. Films were deposited onto both monolithic and bulk micromachined platinized silicon wafers using standard sol-gel chemistries, with roughness and grain size tracked using electron and scanning probe microscopy. Mechanical properties were evaluated in a dynamic bulge testing apparatus. Grain size variations in the Pt film between 35 and 125 nm are shown to have little effect on grain size of the subsequent PZT film and the adhesion of the PZT to the Pt film. Only the Pt film with 125 nm grains was shown to undergo any significant interfacial fracture. Fatigue tests suggest film lifetime is primarily limited by the number of pre- existing flaws in the film from processing. Reducing the microcrack density has been shown to produce films and devices that fail at strains of 1.4% and have mechanical fatigue lifetimes in excess of 100 million cycles at strains simulating the operating conditions.

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