Preparation and characteristics of 90° rotated biepitaxial Fe3O4 thin films

2002 ◽  
Vol 17 (8) ◽  
pp. 1985-1991 ◽  
Author(s):  
Hiroshi Matsuda ◽  
Hiroshi Sakakima ◽  
Hideaki Adachi ◽  
Akihiro Odagawa ◽  
Kentaro Setsune

In-plane 90° rotated biepitaxial Fe3O4 thin films have been successfully prepared onto MgO (110) substrates using a CeO2 seed layer and their microstructure, electric, and magnetic properties were investigated. From the x-ray φ-scan measurements, the in-plane epitaxial relations were determined as 〈110〉Fe3O4//〈110〉MgO and 〈001〉Fe3O4//〈001〉MgO for the no-seeded Fe3O4 layer, and 〈001〉Fe3O4//〈110〉MgO and 〈110〉Fe3O4//〈001〉MgO for the CeO2 (110) seeded Fe3O4 layer. The CeO2 seed layer was found to rotate the upper Fe3O4 lattice at 90° upon normal axis to the layer against the no-seeded Fe3O4. The transmission electron microscopy and electron diffraction analyses revealed that the transition region of the biepitaxial Fe3O4 boundary between CeO2-seeded and no-seeded portions consisted of columnarlike polycrystalline grains. The Fe 3O4 films exhibited single-crystallinelike electric and magnetic properties, however, substantial spin-dependent-tunneling magnetoresistance across the 90° grain boundary was not observed even in the antiparallel situation for each Fe3O4 portion.

2013 ◽  
Vol 275-277 ◽  
pp. 1952-1955
Author(s):  
Ling Fang Jin ◽  
Xing Zhong Li

New functional nanocomposite FePt:C thin films with FePt underlayers were synthesized by noneptaxial growth. The effect of the FePt layer on the ordering, orientation and magnetic properties of the composite layer has been investigated by adjusting FePt underlayer thickness from 2 nm to 14 nm. Transmission electron microscopy (TEM), together with x-ray diffraction (XRD), has been used to check the growth of the double-layered films and to study the microstructure, including the grain size, shape, orientation and distribution. XRD scans reveal that the orientation of the films was dependent on FePt underlayer thickness. In this paper, the TEM studies of both single-layered nonepitaxially grown FePt and FePt:C composite L10 phase and double-layered deposition FePt:C/FePt are presented.


2013 ◽  
Vol 385-386 ◽  
pp. 7-10
Author(s):  
Ling Fang Jin ◽  
Hong Zhuang

Nonepitaxially grown double-layered films were synthesized with a FePt: C composite layer on top of continuous FePt underlayer. The thickness of FePt was changed from 2 nm to 14 nm. Nanostructures, crystalline orientations and the effect of FePt underlayer on the ordering, orientation and magnetic properties of the thin films were investigated by transmission electron microscopy (TEM) and x-ray diffraction (XRD). XRD confirmed the formation of the ordered L10phase for 5 nm FePt: C film with FePt thickness decreased to 5 nm. TEM studies of FePt:C composite L10phase and double-layered deposition FePt:C/FePt were presented.


1998 ◽  
Vol 523 ◽  
Author(s):  
A. F. Myers ◽  
E. B. Steel ◽  
L. M. Struck ◽  
H. I. Liu ◽  
J. A. Burns

AbstractTitanium silicide films grown on silicon were analyzed by transmission electron microscopy (TEM), electron diffraction, scanning transmission electron microscopy (STEM), and energy dispersive x-ray spectroscopy. The films were prepared by sequential rapid thermal annealing (RTA) at 675 °C and 850 °C of 16-nm-thick sputtered Ti on Si (001) wafers. In some cases, a 20-nm-thick TiN capping layer was deposited on the Ti film before the RTA procedure and was removed after annealing. TEM and STEM analyses showed that the silicide films were less than 0.1 μm thick; the capped film was more uniform, ranging in thickness from ∼ 25 – 45 nm, while the uncapped film ranged in thickness from ∼ 15 – 75 nm. Electron diffraction was used to determine that the capped film contained C54-TiSi2, C49-TiSi2, Ti5Si3, and possibly TiSi, and that the uncapped film contained C49-TiSi2, TiSi, Ti5Si3, unreacted Ti, and possibly C54-TiSi2.


1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.


2011 ◽  
Vol 189-193 ◽  
pp. 1036-1039
Author(s):  
Jing Ling Ma ◽  
Jiu Ba Wen ◽  
Yan Fu Yan

The precipitates of Al-5Zn-0.02In-1Mg-0.05Ti-0.5Ce (wt %) anode alloy were studied by scanning electron microscopy, X-ray microanalysis, high resolution transmission electron microscopy and selected area electron diffraction analyses in the present work. The results show that the alloy mainly contains hexagonal structure MgZn2 and tetragonal structure Al2CeZn2 precipitates. From high resolution transmission electron microscopy and selected area electron diffraction, aluminium, Al2CeZn2 and MgZn2 phases have [0 1 -1]Al|| [1 -10]Al2CeZn2|| [-1 1 0 1]MgZn2orientation relation, and Al2CeZn2 and MgZn2 phases have the [0 2 -1]Al2CeZn2|| [0 1 -10]MgZn2orientation relation.


1997 ◽  
Vol 12 (6) ◽  
pp. 1441-1444 ◽  
Author(s):  
L. Armelao ◽  
A. Armigliato ◽  
R. Bozio ◽  
P. Colombo

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.


2013 ◽  
Vol 313-314 ◽  
pp. 254-257
Author(s):  
Ling Fang Jin ◽  
Hong Zhuang

Nonepitaxially grown FePt (x)/FePt:C thin films were synthesized, where FePt (x) (x=2, 5, 8, 11, 14 nm) layers were served as underlayers and FePt:C layer was nanocomposite with thickness of 5 nm. The effect of FePt underlayer on the ordering, orientation and magnetic properties of FePt:C thin films has been investigated by adjusting FePt underlayer thicknesses from 2 nm to 14 nm. X-ray diffraction (XRD), together with transmission electron microscopy (TEM) confirmed that the desired L10 phase was formed and films were (001) textured with FePt underlayer thickness decreased less 5 nm. For 5 nm FePt:C nanocomposite thin film with 2 nm FePt underlayer, the coercivity was 8.2 KOe and the correlation length of FePt:C nanocomposite film was 67 nm. These results reveal that the better orientation and magnetic properties for FePt:C nanocomposite films can be tuned by decreasing FePt underlayer thickness.


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