Research on Structural Properties of FePt: C Thin Films with FePt Underlayers

2013 ◽  
Vol 385-386 ◽  
pp. 7-10
Author(s):  
Ling Fang Jin ◽  
Hong Zhuang

Nonepitaxially grown double-layered films were synthesized with a FePt: C composite layer on top of continuous FePt underlayer. The thickness of FePt was changed from 2 nm to 14 nm. Nanostructures, crystalline orientations and the effect of FePt underlayer on the ordering, orientation and magnetic properties of the thin films were investigated by transmission electron microscopy (TEM) and x-ray diffraction (XRD). XRD confirmed the formation of the ordered L10phase for 5 nm FePt: C film with FePt thickness decreased to 5 nm. TEM studies of FePt:C composite L10phase and double-layered deposition FePt:C/FePt were presented.

2013 ◽  
Vol 275-277 ◽  
pp. 1952-1955
Author(s):  
Ling Fang Jin ◽  
Xing Zhong Li

New functional nanocomposite FePt:C thin films with FePt underlayers were synthesized by noneptaxial growth. The effect of the FePt layer on the ordering, orientation and magnetic properties of the composite layer has been investigated by adjusting FePt underlayer thickness from 2 nm to 14 nm. Transmission electron microscopy (TEM), together with x-ray diffraction (XRD), has been used to check the growth of the double-layered films and to study the microstructure, including the grain size, shape, orientation and distribution. XRD scans reveal that the orientation of the films was dependent on FePt underlayer thickness. In this paper, the TEM studies of both single-layered nonepitaxially grown FePt and FePt:C composite L10 phase and double-layered deposition FePt:C/FePt are presented.


1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.


1997 ◽  
Vol 12 (6) ◽  
pp. 1441-1444 ◽  
Author(s):  
L. Armelao ◽  
A. Armigliato ◽  
R. Bozio ◽  
P. Colombo

The microstructure of Fe2O3 sol-gel thin films, obtained from Fe(OCH2CH3)3, was investigated by x-ray diffraction (XRD), transmission electron microscopy (TEM), and Raman spectroscopy. Samples were nanocrystalline from 400 °C to 1000 °C, and the crystallized phase was haematite. In the coatings, the α–Fe2O3 clusters were dispersed as single particles in a network of amorphous ferric oxide.


2013 ◽  
Vol 313-314 ◽  
pp. 254-257
Author(s):  
Ling Fang Jin ◽  
Hong Zhuang

Nonepitaxially grown FePt (x)/FePt:C thin films were synthesized, where FePt (x) (x=2, 5, 8, 11, 14 nm) layers were served as underlayers and FePt:C layer was nanocomposite with thickness of 5 nm. The effect of FePt underlayer on the ordering, orientation and magnetic properties of FePt:C thin films has been investigated by adjusting FePt underlayer thicknesses from 2 nm to 14 nm. X-ray diffraction (XRD), together with transmission electron microscopy (TEM) confirmed that the desired L10 phase was formed and films were (001) textured with FePt underlayer thickness decreased less 5 nm. For 5 nm FePt:C nanocomposite thin film with 2 nm FePt underlayer, the coercivity was 8.2 KOe and the correlation length of FePt:C nanocomposite film was 67 nm. These results reveal that the better orientation and magnetic properties for FePt:C nanocomposite films can be tuned by decreasing FePt underlayer thickness.


Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.


2006 ◽  
Vol 78 (9) ◽  
pp. 1651-1665 ◽  
Author(s):  
P. John Thomas ◽  
Paul Christian ◽  
Steven Daniels ◽  
Yang Li ◽  
Y. S. Wang ◽  
...  

Simple thermolysis routes to CdS, ZnS, and CoP nanorods have been developed in our laboratory. The structural properties of the nanorods obtained were elucidated by means of X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HR-TEM). Arguments and calculations in support of the contention that intrinsic rather than extrinsic factors influence the solution-phase growth of nanorods are presented.


2017 ◽  
Vol 5 (36) ◽  
pp. 9331-9338 ◽  
Author(s):  
Anna-Lena Hansen ◽  
Torben Dankwort ◽  
Hendrik Groß ◽  
Martin Etter ◽  
Jan König ◽  
...  

Structural properties of the thermoelectric materials CuCrS2 and CuxCrS2 on different length scales.


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