Characteristics of copper films produced via atomic layer deposition

Properties of copper films produced using atomic layer deposition (ALD) were characterized. Composition, morphology, and electrical properties of these films grown on glass, as well as Ta, TiN, and TaN on silicon wafers were examined. The resistivity of films thicker than about 60 nm was near bulk value. Films were deposited using a two-step ALD process in which copper(II)-1,1,1,5,5,5,-hexafluoroacetylacetonate hydrate and water vapor were introduced in the first step and a reducing agent was introduced in a subsequent step. Five reducing agents were evaluated, with the best results obtained using isopropanol or formalin. The optimum deposition temperature with isopropanol was about 260 °C, whereas it was about 300 °C with formalin. These films were also investigated as seed layers for electrodeposition of thicker Cu layers for possible interconnect applications. Excellent fills in high aspect ratio trenches were demonstrated.

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Improved electrical properties of Pt/HfO2/Ge using in situ water vapor treatment and atomic layer deposition

Applied Physics Letters ◽

10.1063/1.3562015 ◽

2011 ◽

Vol 98 (10) ◽

pp. 102905 ◽

Cited By ~ 18

Author(s):

In-Sung Park ◽

Youngjae Choi ◽

William T. Nichols ◽

Jinho Ahn

Keyword(s):

Water Vapor ◽

Electrical Properties ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Layer Deposition ◽

Vapor Treatment

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Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2 /SiO2 /4H-SiC Metal-Oxide Semiconductor Structures

physica status solidi (a) ◽

10.1002/pssa.201700882 ◽

2018 ◽

Vol 215 (13) ◽

pp. 1700882 ◽

Cited By ~ 3

Author(s):

Krystian Król ◽

Mariusz Sochacki ◽

Andrzej Taube ◽

Norbert Kwietniewski ◽

Sylwia Gierałtowska ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Deposition Temperature ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Influence of the atomic layer deposition temperature on the structural and electrical properties of Al/Al2O3/p-Ge MOS structures

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.5003375 ◽

2018 ◽

Vol 36 (1) ◽

pp. 01A120 ◽

Cited By ~ 3

Author(s):

Martha A. Botzakaki ◽

George Skoulatakis ◽

Nikolaos Xanthopoulos ◽

Violetta Gianneta ◽

Anastasios Travlos ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Deposition Temperature ◽

Atomic Layer ◽

Layer Deposition ◽

Structural And Electrical Properties ◽

Mos Structures

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Effect of Oxygen Source on the Various Properties of SnO2 Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Coatings ◽

10.3390/coatings10070692 ◽

2020 ◽

Vol 10 (7) ◽

pp. 692

Author(s):

Jong Hyeon Won ◽

Seong Ho Han ◽

Bo Keun Park ◽

Taek-Mo Chung ◽

Jeong Hwan Han

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Carrier Concentration ◽

High Mobility ◽

Impurity Scattering ◽

Atomic Layer ◽

Growth Behavior ◽

Layer Deposition ◽

Growth Feature ◽

O2 Plasma

Herein, we performed a comparative study of plasma-enhanced atomic layer deposition (PEALD) of SnO2 films using Sn(dmamp)2 as the Sn source and either H2O plasma or O2 plasma as the oxygen source in a wide temperature range of 100–300 °C. Since the type of oxygen source employed in PEALD determines the growth behavior and resultant film properties, we investigated the growth feature of both SnO2 PEALD processes and the various chemical, structural, morphological, optical, and electrical properties of SnO2 films, depending on the oxygen source. SnO2 films from Sn(dmamp)2/H2O plasma (SH-SnO2) and Sn(dmamp)2/O2 plasma (SO-SnO2) showed self-limiting atomic layer deposition (ALD) growth behavior with growth rates of ~0.21 and 0.07–0.13 nm/cycle, respectively. SO-SnO2 films showed relatively larger grain structures than SH-SnO2 films at all temperatures. Interestingly, SH-SnO2 films grown at high temperatures of 250 and 300 °C presented porous rod-shaped surface morphology. SO-SnO2 films showed good electrical properties, such as high mobility up to 27 cm2 V−1·s−1 and high carrier concentration of ~1019 cm−3, whereas SH-SnO2 films exhibited poor Hall mobility of 0.3–1.4 cm2 V−1·s−1 and moderate carrier concentration of 1 × 1017–30 × 1017 cm−3. This may be attributed to the significant grain boundary and hydrogen impurity scattering.

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