Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2
/SiO2
/4H-SiC Metal-Oxide Semiconductor Structures

Oxide Semiconductor ◽

Semiconductor Structures ◽

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

Journal of Applied Physics ◽

10.1063/1.3428492 ◽

2010 ◽

Vol 107 (10) ◽

pp. 106104 ◽

Cited By ~ 43

Author(s):

D. Gregušová ◽

R. Stoklas ◽

Ch. Mizue ◽

Y. Hori ◽

J. Novák ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Trap States ◽

Semiconductor Structures ◽

Formation and characterization of nanometer scale metal-oxide-semiconductor structures on GaAs using low-temperature atomic layer deposition

10.1063/1.1954902 ◽

2005 ◽

Vol 87 (1) ◽

pp. 013501 ◽

Cited By ~ 17

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

E. E. Tois ◽

Jian Jim Wang

Keyword(s):

Low Temperature ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Nanometer Scale ◽

Semiconductor Structures ◽

Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

Journal of Applied Physics ◽

10.1063/1.4759329 ◽

2012 ◽

Vol 112 (8) ◽

pp. 084103 ◽

Cited By ~ 32

Author(s):

Rena Suzuki ◽

Noriyuki Taoka ◽

Masafumi Yokoyama ◽

Sang-Hyeon Kim ◽

Takuya Hoshii ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Deposition Temperature ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Interface Properties ◽

Semiconductor Interface ◽

Effect of annealing processes on the electrical properties of the atomic layer deposition Al2O3/In0.53Ga0.47As metal oxide semiconductor capacitors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ef04 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EF04 ◽

Cited By ~ 7

Author(s):

Quang-Ho Luc ◽

Edward Yi Chang ◽

Hai-Dang Trinh ◽

Hong-Quan Nguyen ◽

Binh-Tinh Tran ◽

...

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Oxide Semiconductor ◽

TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Cited By ~ 12

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

10.1063/1.3007978 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193504 ◽

Cited By ~ 26

Author(s):

Rahul Suri ◽

Bongmook Lee ◽

Daniel J. Lichtenwalner ◽

Nivedita Biswas ◽

Veena Misra

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization

10.1063/1.2806190 ◽

2007 ◽

Vol 91 (19) ◽

pp. 193503 ◽

Cited By ~ 41

Author(s):

D. Shahrjerdi ◽

D. I. Garcia-Gutierrez ◽

T. Akyol ◽

S. R. Bank ◽

E. Tutuc ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Fabrication And Characterization

The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress

Well-behaved metal–oxide–semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor–liquid hybrid deposition process

10.1063/1.1762977 ◽

2004 ◽

Vol 84 (25) ◽

pp. 5097-5099 ◽

Cited By ~ 12

Author(s):

Y. Xuan ◽

D. Hojo ◽

T. Yasuda

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Deposition Process ◽

Oxide Semiconductor ◽

Hafnium Silicate ◽

Layer Deposition ◽

Metal Oxide Semiconductor Capacitor ◽

Deposition Mode

GaAs-based metal-oxide semiconductor field-effect transistors with Al2O3 gate dielectrics grown by atomic layer deposition

Journal of Electronic Materials ◽

10.1007/s11664-004-0220-9 ◽

2004 ◽

Vol 33 (8) ◽

pp. 912-915 ◽

Cited By ~ 12

Author(s):

P. D. Ye ◽

G. D. Wilk ◽

B. Yang ◽

J. Kwo ◽

H. -J. L. Gossmann ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Atomic Layer ◽

Oxide Semiconductor ◽