Field-effect transistors made from macroscopic single crystals of tetracene and related semiconductors on polymer dielectrics

We report properties of devices made by the adhesion of semiconductor crystals, including several tetracene specimens, to polymer gate dielectrics along with measurements of tetracene crystals on conventional Si/SiO2 dielectric surfaces. For the best tetracene, pentacene, and alpha-6T devices, mobilities exceeding 0.1 cm2/V were measured, correlating well with expectations based on the literature, and in the case of tetracene and alpha-6T, exceeding the thin film mobility value. The devices were prepared in the open laboratory using simpler crystal handling techniques than had been thought necessary.

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Reduction of bulk and interface defects by network self-organizations in gate dielectrics for silicon thin film and field effect transistors (TFTs and FETs, respectively)

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2006.03.123 ◽

2006 ◽

Vol 352 (42-49) ◽

pp. 4509-4516

Author(s):

G. Lucovsky ◽

J.C. Phillips

Keyword(s):

Thin Film ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Silicon Thin Film ◽

Interface Defects

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Fabrication of flexible high-performance organic field-effect transistors using phenacene molecules and their application toward flexible CMOS inverters

Journal of Materials Chemistry C ◽

10.1039/c8tc05824e ◽

2019 ◽

Vol 7 (20) ◽

pp. 6022-6033 ◽

Cited By ~ 5

Author(s):

Emanuela Pompei ◽

Claudio Turchetti ◽

Shino Hamao ◽

Akari Miura ◽

Hidenori Goto ◽

...

Keyword(s):

Thin Film ◽

Transport Properties ◽

Field Effect ◽

High Performance ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Plastic Substrates

The transport properties of 3,10-ditetradecylpicene ((C14H29)2-picene) and [6]phenacene thin-film field-effect transistors (FETs) on Si and plastic substrates are reported, in which SiO2 and parylene are used as gate dielectrics, respectively.

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Reduction of bonding constraints by self-organization in gate dielectrics for a-Si:H thin film transistors (TFTs) and crystalline Si field effect transistors (FETs)

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2005.11.130 ◽

2006 ◽

Vol 352 (9-20) ◽

pp. 1711-1714 ◽

Cited By ~ 1

Author(s):

G. Lucovsky ◽

J.C. Phillips

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Self Organization

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Functionalization of Polymer Dielectrics: Functionalization of Low‐k Polyimide Gate Dielectrics with Self‐Assembly Monolayer Toward High‐Performance Organic Field‐Effect Transistors and Circuits (Adv. Mater. Interfaces 11/2021)

Advanced Materials Interfaces ◽

10.1002/admi.202170059 ◽

2021 ◽

Vol 8 (11) ◽

pp. 2170059

Author(s):

Yingshuang Zheng ◽

Li Yu ◽

Zhongwu Wang ◽

Xiaosong Chen ◽

Jie Li ◽

...

Keyword(s):

Self Assembly ◽

Field Effect ◽

High Performance ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Polymer Dielectrics ◽

Low K

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Growth of very large MoS2 single crystals using out-diffusion transport and their use in field effect transistors

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2021.3083686 ◽

2021 ◽

pp. 1-1

Author(s):

Sushil Pandey ◽

Nezhueyotl Izquierdo ◽

Stephen A. Campbell

Keyword(s):

Single Crystals ◽

Field Effect ◽

Field Effect Transistors ◽

Diffusion Transport

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Surface Decoration on Polymeric Gate Dielectrics for Flexible Organic Field-Effect Transistors via Hydroxylation and Subsequent Monolayer Self-Assembly

ACS Applied Materials & Interfaces ◽

10.1021/acsami.5b05363 ◽

2015 ◽

Vol 7 (42) ◽

pp. 23464-23471 ◽

Cited By ~ 13

Author(s):

Yan Yan ◽

Long-Biao Huang ◽

Ye Zhou ◽

Su-Ting Han ◽

Li Zhou ◽

...

Keyword(s):

Self Assembly ◽

Field Effect ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Surface Decoration

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Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

Essays in Biochemistry ◽

10.1042/ebc20150009 ◽

2016 ◽

Vol 60 (1) ◽

pp. 81-90 ◽

Cited By ~ 45

Author(s):

Vivek Pachauri ◽

Sven Ingebrandt

Keyword(s):

Field Effect ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Label Free ◽

Biomolecular Detection ◽

New Device ◽

Label Free Detection ◽

History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

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