Fabrication of flexible high-performance organic field-effect transistors using phenacene molecules and their application toward flexible CMOS inverters

2019 ◽  
Vol 7 (20) ◽  
pp. 6022-6033 ◽  
Author(s):  
Emanuela Pompei ◽  
Claudio Turchetti ◽  
Shino Hamao ◽  
Akari Miura ◽  
Hidenori Goto ◽  
...  
Keyword(s):  
Thin Film ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Plastic Substrates

The transport properties of 3,10-ditetradecylpicene ((C14H29)2-picene) and [6]phenacene thin-film field-effect transistors (FETs) on Si and plastic substrates are reported, in which SiO2 and parylene are used as gate dielectrics, respectively.

Solution-grown unidirectionally oriented crystalline thin films of a U-shaped thienoacene-based semiconductor for high-performance organic field-effect transistors

2017 ◽  
Vol 5 (24) ◽  
pp. 5872-5876 ◽  
Author(s):  
Tatsuya Mori ◽  
Tatsuya Oyama ◽  
Hideaki Komiyama ◽  
Takuma Yasuda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Transistors ◽  
Organic Field Effect Transistors ◽  
Lamellar Structures

Strategically dialkylated bis(benzo[4,5]thieno)[2,3-b:3′,2′-d]thiophene molecules having an overall U-shaped configuration can self-organize into bilayer lamellar structures, demonstrating high charge-transport properties in thin-film organic transistors.

Low temperature cross-linked, high performance polymer gate dielectrics for solution-processed organic field-effect transistors

2015 ◽  
Vol 6 (32) ◽  
pp. 5884-5890 ◽  
Author(s):  
Shengxia Li ◽  
Linrun Feng ◽  
Jiaqing Zhao ◽  
Xiaojun Guo ◽  
Qing Zhang
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Cross Linking ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
High Performance Polymer

Thermal cross-linking the bi-functional polymer thin-films at low temperature for gate dielectric application in solution processed organic field-effect transistors.

High performance single-crystalline organic field-effect transistors based on molecular-modified dibenzo[a,e]pentalenes derivatives

2020 ◽  
Vol 44 (40) ◽  
pp. 17552-17557
Author(s):  
Fan Yin ◽  
Long Wang ◽  
Xiankai Yang ◽  
Meihui Liu ◽  
Hua Geng ◽  
...  
Keyword(s):  
Molecular Structure ◽  
Charge Transport ◽  
Transport Properties ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Single Crystalline

Modulating the charge transport properties realized by a controllable molecular structure resulted in different packing arrangements.

A Transparent Cyanated Polyimide Gate Dielectrics for High Performance Organic Field-Effect Transistors

Polymer Korea ◽  
2019 ◽  
Vol 43 (1) ◽  
pp. 38-45
Author(s):  
Yonghwa Baek ◽  
Xinlin Li ◽  
Prerna Chaudhary ◽  
Chan Eon Park ◽  
Sung Soo Han ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Synthesis and characterization of carbazolo[2,1-a]carbazole in thin film and single crystal field-effect transistors

2017 ◽  
Vol 5 (28) ◽  
pp. 7020-7027 ◽  
Author(s):  
Miriam Más-Montoya ◽  
José Pedro Cerón-Carrasco ◽  
Shino Hamao ◽  
Ritsuko Eguchi ◽  
Yoshihiro Kubozono ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Crystal Field ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Synthesis And Characterization ◽  
Organic Field Effect Transistors ◽  
Crystal Field Effect

Carbazole-based azaphenacene with high performance in organic field-effect transistors.

Polymer Gate Dielectrics for High Performance Organic Field-Effect Transistors

2006 ◽  
Vol 937 ◽  
Author(s):  
Faruk Altan Yildirim ◽  
Ronald Meixner ◽  
Robert Roman Schliewe ◽  
Wolfgang Bauhofer ◽  
Holger Goebel ◽  
...  
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Volume Resistivity ◽  
Dielectric Materials ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
Solution Processed ◽  
Metal Insulator Metal

ABSTRACTSolution-processed bottom-gate organic field-effect transistors (OFET) with different dielectric materials were produced and characterized. As the active semiconductor layer, regioregular poly(3-hexylthiophene) (rr-P3HT) was used. In addition to the dielectrics which have been reported in literature, various other materials with simple processing conditions were used as gate-dielectrics. Also, the dielectric properties of the polymeric layers were investigated in metal-insulator-metal capacitor structures, where the thicknesses of the films were exactly the same as they were in the OFETs. The specific volume resistivity and dielectric constant values determined were then used to explain the electrical behavior of OFETs. The devices having BCB, SU-8 and NOA74 as the dielectric layers exhibited the desired transistor characteristics, whereas the transistors with Avatrel dielectric did not, due to higher gate-leakages. As a result, SU-8 and NOA74 resins were proven to be good candidates for gate-dielectric usage in solution-processed all-polymer OFETs.

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