Effect of zirconia content on electrical conductivities of mullite/zirconia composites measured by impedance spectroscopy

2008 ◽  
Vol 23 (8) ◽  
pp. 2125-2132 ◽  
Author(s):  
Hong-Da Ko ◽  
Chien-Cheng Lin ◽  
Kuo-Chuang Chiu

Electrical conductivities of various mullite/zirconia composites, as well as monolithic mullite and zirconia, were measured using AC impedance spectroscopy from 100 Hz to 10 MHz at temperatures ranging from 150 to 1300 °C. The impedance spectra of monolithic zirconia and mullite/zirconia composites showed two semicircles because of the contributions from grains and grain boundaries, while those of monolithic mullite had one semicircle due to the predominant contribution from grains. This indicates that the conductivities of the mullite/zirconia composites increased with zirconia content. The activation energies of electrical conduction in mullite and zirconia were about 65 and 79 kJ/mol, respectively, and those of mullite/zirconia composites were between 65 and 79 kJ/mol. While the conductivities of various composites at 1 MHz were fitted by Lichtenecker’s rule, the general mixing equation could be applied to the conductivities measured at 1 kHz.

2001 ◽  
Vol 16 (1) ◽  
pp. 192-196 ◽  
Author(s):  
Seong-Ho Kim ◽  
Jung-Ho Moon ◽  
Jae-Hwan Park ◽  
Jae-Gwan Park ◽  
Yoonho Kim

The thermal activation energies for conduction of Nb-doped SrTiO3 grains and grain boundaries have been investigated by impedance spectroscopy. First, to observe the effect of electrode/SrTiO3 bulk interface, the varied impedances of SrTiO3 single crystal were measured with temperatures. The activation energy of an electrode/bulk interface was determined to be 1.3 eV, whereas that of bulk was 0.8 eV. When the impedances of Nb-doped SrTiO3 ceramics were measured, it was suggested that the more precise impedance values of a single grain and a single grain to grain junction be obtained using a microelectrode method. The activation energies for a grain, a grain boundary, and an electrode/bulk interface were determined to be about 0.8, 1.3, and 1.5 eV, respectively. From these measured results, it was suggested that the activation energy, 0.8 eV, measured in grain was originated from oxygen vacancies and the activation energy, 1.3 eV, in grain boundary was from strontium vacancies.


2007 ◽  
Vol 336-338 ◽  
pp. 709-711 ◽  
Author(s):  
Hong Jie Zhao ◽  
Ji Zhou ◽  
Zhi Lun Gui ◽  
Long Tu Li

The effects of Bi-substitution on the complex impedance spectra of yttrium iron garnet (YIG) were studied in this paper. The polycrystalline yttrium iron garnet Y2BiFe5O12 (YIG: Bi) and Y3Fe5O12 (YIG) samples were prepared by solid-reaction method. The complex impedance spectra were measured in the frequency range from 1 KHz to 100MHz at several temperatures between 210oC and 500oC. The complex impedance sample shows that the YIG: Bi can be represented by double Cole-Cole semicircles, and the YIG can be represented by a single Cole semicircle. The physical structure of the specimen was visualized as comprising of small resistance grains separated by large resistance grain boundaries in accordance with the impedance spectra observations. The electrical processes in the sample were modeled in the form of an electrical equivalent circuit made up of a series combination of two parallel RC circuits attributed to grains and grain boundaries. The temperature dependence of bulk resistance indicated an evidence of Arrhenius-type thermally activated process, showing a close to linear variation up to a temperature of 740 K.


2021 ◽  
Vol 904 ◽  
pp. 363-368
Author(s):  
Xiao Yan Zhou ◽  
Bang Sheng Yin

The 3 at% Al doped ZnO thin films were deposited on p-Si substrate with a native SiO2 layer by spray pyrolysis method. Low temperature conduction behaviors were studied by analysis of impedance spectroscopy and low temperature ac conductivity. The results of impedance spectroscopy showed that the grain boundaries contributed to the resistivity of Al doped ZnO/SiO2/p-Si heterojunction. The calculated activation energy was 0.073 eV for grain boundaries. The equivalent circuit to demonstrate the electrical properties of Al doped ZnO/SiO2/p-Si heterojunction was a series connection of two parallel combination circuits of a resistor and a universal capacitor. Low temperature ac conductivity measurements indicated that the conductivity increased with temperature. Low temperature conductivity mechanism was electron conductivity, and the activation energy was 0.086 eV.


2009 ◽  
Vol 421-422 ◽  
pp. 471-474 ◽  
Author(s):  
Dedy Eka Priyanto ◽  
Hidenobu Shiroishi ◽  
Satoshi Tanimoto ◽  
Shunsuke Hirukawa ◽  
Morihiro Saito ◽  
...  

Proton conducting ZrO2-yP2O5 (y = 1.0, 1.2, 1.4. 1.6, 1.8) electrolytes based on a shell-core structure were synthesized with diammonium hydrogen phosphate by a solid state reaction, and their conductivities were investigated by ac-impedance spectroscopy. Among the ZrO2-yP2O5 compositions, ZrO2-1.6P2O5 showed the highest proton conductivity of 0.13 Scm-1 at 250°C. The conductivity increased with increasing P2O5 molar ratio and were significantly influenced by heat-treatments in the preparation process. Polytetraflouroethylene (PTFE) was also mixed into these electrolytes in order to improve the mechanical strength and long term durability.


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