Copper Doped ZnO Thin Film for Ultraviolet Photodetector with Enhanced Photosensitivity

2013 ◽  
Vol 1494 ◽  
pp. 43-49 ◽  
Author(s):  
Akshta Rajan ◽  
Kashima Arora ◽  
Harish Kumar Yadav ◽  
Vinay Gupta ◽  
Monika Tomar
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
High Porosity ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Uv Photodetector ◽  
Response Characteristics ◽  
Uv Illumination ◽  
Photogenerated Electrons ◽  
Doped Zno

ABSTRACTUltraviolet photoconductivity in Copper doped ZnO (Cu:ZnO) thin films synthesized by sol-gel technique is investigated. Response characteristics of Pure ZnO thin film and Cu:ZnO thin film UV photodetector with 1.3 at. wt % Cu doping biased at 5 V for UV radiation of λ = 365 nm and intensity = 24 µwatt/cm2 has been studied. Cu:ZnO UV photodetector is found to exhibit a high photocoductive gain (K = 1.5×104) with fast recovery (T90% = 23s) in comparison to pure ZnO thin film based photodetector (K = 4.9×101 and T90% = 41s). Cu2+ ions have been substituted in ZnO lattice which has been confirmed by X-ray diffraction (XRD) and Raman spectroscopy leading to lowering of dark current (Ioff ∼ 1.44 nA). Upon UV illumination, more electron hole pairs are generated in the photodetector due to the high porosity and roughness of the surface of the film which favours adsorption of more oxygen on the surface of the photodetector. The photogenerated holes recombined with the trapped electrons, increasing the concentration of photogenerated electrons in the conduction band enhancing the photocurrent (Ion ∼ 0.02 mA) of the Cu:ZnO photodetector.

Sol–gel derived Ag-doped ZnO thin film for UV photodetector with enhanced response

2013 ◽  
Vol 48 (22) ◽  
pp. 7994-8002 ◽  
Author(s):  
Akshta Rajan ◽  
Harish Kumar Yadav ◽  
Vinay Gupta ◽  
Monika Tomar
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Uv Photodetector ◽  
Doped Zno

The Structural and Optical Properties of Al Doped ZnO Thin Film

2015 ◽  
Vol 727-728 ◽  
pp. 280-283
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Absorption Spectroscopy ◽  
Sol Gel ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Uv Emission ◽  
Doped Zno

Al doped ZnO thin film have been prepared by a sol-gel method. The structural, and optical properties of the sample were investigated. X-ray diffraction and X-ray absorption spectroscopy analyses and UV absorption spectroscopy analyses indicate that Al3+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping, the visible emission increased and the UV emission decreased, which is attributed to the increase of O vacancies and Zn interstitials.

Dielectric Anomaly in Mg Doped ZnO Thin Film Deposited by Sol-Gel Method

2019 ◽  
Vol 28 (2) ◽  
pp. 427-434
Author(s):  
Amanpal C. Singh ◽  
Parmod Kumar Khanna ◽  
Anuj Kumar ◽  
Mukesh Kumar ◽  
Dinesh Kumar
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dielectric Anomaly ◽  
Zno Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno ◽  
Mg Doped

Al Doped ZnO Thin Film Based Ultraviolet Photo-Conductive Sensor Prepared by Sol-Gel Spin-Coating Method

2009 ◽  
Author(s):  
M. H. Mamat ◽  
M. Z. Sahdan ◽  
S. Amizam ◽  
H. A. Rafaie ◽  
Z. Khusaimi ◽  
...  
Keyword(s):  
Thin Film ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Spin Coating Method ◽  
Coating Method ◽  
Doped Zno

Effect of Bi dopant on morphological and optical properties of ZnO semiconductor films produced by the sol-gel spin coating process

2021 ◽  
Vol 63 (8) ◽  
pp. 778-782
Author(s):  
Tülay Yıldız ◽  
Nida Katı ◽  
Kadriye Yalçın
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Spin Coating Method ◽  
Coating Method ◽  
Doped Zno

Abstract In this study, undoped semiconductor ZnO thin film and Bi-doped ZnO thin films were produced using the sol-gel spin coating method. By changing each parameter of the spin coating method, the best conditions for the formation of the film were determined via the trial and error method. When the appropriate parameter was found, the specified parameter was applied for each film. The structural, superficial, and optical properties of the films produced were characterized via atomic force microscope (AFM), UV-visible spectroscopy, and Fourier transform infrared (FTIR), and the effects of Bi dopant on these properties were investigated. When the morphological properties of the undoped and Bi-doped ZnO films were examined, it was observed that they had a structure in a micro-fiber shape consisting of nanoparticles. When the surface roughness was examined, it was observed that the surface roughness values became larger as the rate of Bi dopant increased. By examining the optical properties of the films, it was determined that they were direct band transition materials and Bi-doped thin films were involved in the semiconductor range. In addition, optical properties changed positively with Bi dopant. Since Bi-doped ZnO thin film has a wide bandgap and good optical properties, it is a material that can be used in optoelectronic applications.

Growth and physical properties of sol–gel derived Co doped ZnO thin film

2007 ◽  
Vol 42 (1-6) ◽  
pp. 246-250 ◽  
Author(s):  
Ki-Chul Kim ◽  
Eung-kwon Kim ◽  
Young-Sung Kim
Keyword(s):  
Thin Film ◽  
Physical Properties ◽  
Sol Gel ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Co Doped

Dielectric Anomaly in Mg Doped ZnO Thin Film Deposited by Sol–Gel Method

2011 ◽  
Vol 158 (1) ◽  
pp. G9 ◽  
Author(s):  
Amanpal Singh ◽  
D. Kumar ◽  
P. K. Khanna ◽  
Anuj Kumar ◽  
Mukesh Kumar
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dielectric Anomaly ◽  
Zno Thin Film ◽  
Gel Method ◽  
Sol Gel Method ◽  
Doped Zno ◽  
Mg Doped
Sign in / Sign up

Export Citation Format

Share Document