Growth and physical properties of sol–gel derived Co doped ZnO thin film

2007 ◽  
Vol 42 (1-6) ◽  
pp. 246-250 ◽  
Author(s):  
Ki-Chul Kim ◽  
Eung-kwon Kim ◽  
Young-Sung Kim
2019 ◽  
Vol 33 (29) ◽  
pp. 1950345
Author(s):  
Seyedeh-Niousha Mirmohammad-Hosseini-Oushani ◽  
Nasser Zare-Dehnavi

In this work, the ZnO thin film, the Al-doped ZnO (AZO) thin film (0.98M ZnO, 0.02M Al) and the (Al,Co) co-doped ZnO thin film (AZO:Co) (0.95M ZnO, 0.02M Al, 0.03M Co) were deposited on the glass substrate by the Sol–Gel method. We fabricated a sample of the ZnO thin film, a sample of the AZO thin film and three samples of AZO:Co thin films. The spin-coating was used to deposit thin film on the glass substrate. The ZnO and the AZO thin films were annealed at 450[Formula: see text]C while three samples of the AZO:Co thin films were annealed at 300[Formula: see text]C, 450[Formula: see text]C and 600[Formula: see text]C in air for 60 min, respectively. In order to prepare three samples of the AZO:Co thin films, we deposited the (Al,Co) co-doped ZnO on the glass substrate for 20 s then all samples were per-heated at 80[Formula: see text]C for 10 min. we repeated this deposition process five times for each sample. Finally, three samples were annealed at 300[Formula: see text]C, 450[Formula: see text]C and 600[Formula: see text]C in air for 60 min, respectively. The procedure to prepare of the ZnO and AZO thin films was like the AZO:Co thin films except that the annealing temperature was 450[Formula: see text]C. The structural and optical properties of the thin films were investigated by X-ray diffraction technique, UV-Vis spectrophotometer and Field Emission Scanning Electron Microscopy (FESEM). Results indicated that (Al,Co) co-doping in the ZnO thin film improve the optical transmission while changes in the lattice structure is small with respect to the AZO thin film. Also, the AZO:Co thin film which was annealed at 450[Formula: see text]C exhibited simultaneously the high thickness and high optical transmission.


2019 ◽  
Vol 28 (2) ◽  
pp. 427-434
Author(s):  
Amanpal C. Singh ◽  
Parmod Kumar Khanna ◽  
Anuj Kumar ◽  
Mukesh Kumar ◽  
Dinesh Kumar

2009 ◽  
Author(s):  
M. H. Mamat ◽  
M. Z. Sahdan ◽  
S. Amizam ◽  
H. A. Rafaie ◽  
Z. Khusaimi ◽  
...  

2013 ◽  
Vol 48 (22) ◽  
pp. 7994-8002 ◽  
Author(s):  
Akshta Rajan ◽  
Harish Kumar Yadav ◽  
Vinay Gupta ◽  
Monika Tomar

2014 ◽  
Vol 556-562 ◽  
pp. 429-432
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu

Successful synthesis of room-temperature ferromagnetic semiconductors, (Cu, Co) co-doped ZnO film is obtained by sol-gel method. It is found that the essential ingredient in achieving room-temperature ferromagnetism is Cu co-doping. By Hall-effect measurement ap-type conductivity was observed for the Cu co-doped films, which induced the room-temperature ferromagnetism.


2013 ◽  
Vol 1494 ◽  
pp. 43-49 ◽  
Author(s):  
Akshta Rajan ◽  
Kashima Arora ◽  
Harish Kumar Yadav ◽  
Vinay Gupta ◽  
Monika Tomar

ABSTRACTUltraviolet photoconductivity in Copper doped ZnO (Cu:ZnO) thin films synthesized by sol-gel technique is investigated. Response characteristics of Pure ZnO thin film and Cu:ZnO thin film UV photodetector with 1.3 at. wt % Cu doping biased at 5 V for UV radiation of λ = 365 nm and intensity = 24 µwatt/cm2 has been studied. Cu:ZnO UV photodetector is found to exhibit a high photocoductive gain (K = 1.5×104) with fast recovery (T90% = 23s) in comparison to pure ZnO thin film based photodetector (K = 4.9×101 and T90% = 41s). Cu2+ ions have been substituted in ZnO lattice which has been confirmed by X-ray diffraction (XRD) and Raman spectroscopy leading to lowering of dark current (Ioff ∼ 1.44 nA). Upon UV illumination, more electron hole pairs are generated in the photodetector due to the high porosity and roughness of the surface of the film which favours adsorption of more oxygen on the surface of the photodetector. The photogenerated holes recombined with the trapped electrons, increasing the concentration of photogenerated electrons in the conduction band enhancing the photocurrent (Ion ∼ 0.02 mA) of the Cu:ZnO photodetector.


2013 ◽  
Vol 9 (1) ◽  
pp. 7-11 ◽  
Author(s):  
Sung-geun Kang ◽  
Youngrae Kim ◽  
Sarah Eunkyung Kim ◽  
Sungdong Kim

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