Investigation of the valence band structure of PbSe by optical and transport measurement

2013 ◽  
Vol 1490 ◽  
pp. 75-81 ◽  
Author(s):  
Thomas C. Chasapis ◽  
Yeseul Lee ◽  
Georgios S. Polymeris ◽  
Eleni C. Stefanaki ◽  
Euripides Hatzikraniotis ◽  
...  

ABSTRACTWe investigated the valence band structure of PbSe by a combined study of the optical and transport properties of p-type Pb1-xNaxSe, with Na concentrations ranging from 0 – 4%, yielding carrier densities in a wide range of 1018 – 1020 cm−3. Room temperature infrared reflectivity studies showed that the susceptibility (or conductivity) effective mass m* increases from ∼ 0.06mo to ∼ 0.5mo on increasing Na content from 0.08% to 3%. The Seebeck coefficient scales with doping in the whole temperature range, yielding lower values for higher Na contents, while the Hall coefficient increases on heating from room temperature showing a peak close to 650 K. The room temperature Pisarenko plot is well described by the simple parabolic band model up to ∼ 1·1020 cm−3. In order to describe the behaviour in the whole concentration range, the application of the two band model, i.e. light hole and heavy hole, was used giving density of states effective masses 0.28mo and 2.5mo for the two bands respectively.

1994 ◽  
Vol 08 (20) ◽  
pp. 1261-1268 ◽  
Author(s):  
H.I. STARNBERG ◽  
H.E. BRAUER ◽  
P.O. NILSSON ◽  
L.J. HOLLEBOOM ◽  
H.P. HUGHES

We report photoemission studies of the valence band structure of VSe 2 and of VSe2 intercalated with Cs. Pure VSe 2 showed significant band dispersion both perpendicular and parallel to the layers, i.e. the valence band of VSe 2 is 3D in character, confirming self-consistent LAPW band structure calculations. After Cs intercalation the perpendicular band dispersion vanished, while that parallel to the layers remained, showing that the valence band structure had become 2D. The observed changes go far beyond the rigid band model, but are largely understandable in terms of intercalation-induced decoupling of the VSe 2 layers, and charge transfer from the Cs.


2019 ◽  
Vol 99 (19) ◽  
Author(s):  
Martin Franz ◽  
Stephan Appelfeller ◽  
Holger Eisele ◽  
Philipp Ebert ◽  
Mario Dähne

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Takuya Kawazu

Optical properties of GaAs/AlGaAs quantum wells (QWs) in the vicinity of InAlAs quantum dots (QDs) were studied and compared with a theoretical model to clarify how the QD strain affects the electronic states in the nearby QW. In0.4Al0.6As QDs are embedded at the top of the QWs; the QD layer acts as a source of strain as well as an energy barrier. Photoluminescence excitation (PLE) measurements showed that the QD formation leads to the increase in the ratio Ie-lh/Ie-hh of the PLE intensities for the light hole (lh) and the heavy hole (hh), indicating the presence of the valence band mixing. We also theoretically calculated the hh-lh mixing in the QW due to the nearby QD strain and evaluated the PLE ratio Ie-lh/Ie-hh.


1979 ◽  
Vol 43 (15) ◽  
pp. 1134-1137 ◽  
Author(s):  
P. Oelhafen ◽  
E. Hauser ◽  
H. -J. Güntherodt ◽  
K. H. Bennemann

2013 ◽  
Vol 87 (8) ◽  
Author(s):  
M. T. Edmonds ◽  
A. Tadich ◽  
M. Wanke ◽  
K. M. O'Donnell ◽  
Y. Smets ◽  
...  

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