Impact of Gate Metal on Surface States Distribution and Effective Surface Barrier Height in AlGaN/GaN Heterostructures

2013 ◽  
Vol 1538 ◽  
pp. 335-340 ◽  
Author(s):  
Nitin Goyal ◽  
Tor A. Fjeldly

ABSTRACTA physics based model is presented to describe the surface donor density distribution for metal/AlGaN/GaN structures. This model partly relies on experimental observations to describe the reduction that takes place in surface donor density when the metal gate is deposited. This new model is based on our previous work on the bare surface barrier height for both unrelaxed and partially relaxed barrier layers. The model predictions are consistent with reported experimental data.

2004 ◽  
Vol 831 ◽  
Author(s):  
Seong-Eun Park ◽  
Joseph J. Kopanski ◽  
Youn-Seon Kang ◽  
Lawrence H. Robins ◽  
Hyun-Keel Shin

ABSTRACTPhotoreflectance (PR) modulation spectroscopy was performed to investigate surface properties of GaN films grown on sapphire substrates. From the period of the Franz-Keldysh oscillations, the surface electric field across the GaN space charge region was found to be (197 ± 11) kV/cm, which corresponds to a surface state density of 1.0×1012 cm−2. A surface barrier height of 0.71 eV was determined by fitting the dependence of the PR intensities on pump beam power density. We suggest that a deep level is formed at 2.68 eV above the GaN valence band edge due to the large density of surface states.


2012 ◽  
Vol 101 (10) ◽  
pp. 103505 ◽  
Author(s):  
Nitin Goyal ◽  
Benjamin Iñiguez ◽  
Tor A. Fjeldly

1995 ◽  
Vol 29 (1-3) ◽  
pp. 198-201 ◽  
Author(s):  
A.L. Syrkin ◽  
A.N. Andreev ◽  
A.A. Lebedev ◽  
M.G. Rastegaeva ◽  
V.E. Chelnokov

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