Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures

2012 ◽  
Vol 101 (10) ◽  
pp. 103505 ◽  
Author(s):  
Nitin Goyal ◽  
Benjamin Iñiguez ◽  
Tor A. Fjeldly
2013 ◽  
Vol 1538 ◽  
pp. 335-340 ◽  
Author(s):  
Nitin Goyal ◽  
Tor A. Fjeldly

ABSTRACTA physics based model is presented to describe the surface donor density distribution for metal/AlGaN/GaN structures. This model partly relies on experimental observations to describe the reduction that takes place in surface donor density when the metal gate is deposited. This new model is based on our previous work on the bare surface barrier height for both unrelaxed and partially relaxed barrier layers. The model predictions are consistent with reported experimental data.


1995 ◽  
Vol 29 (1-3) ◽  
pp. 198-201 ◽  
Author(s):  
A.L. Syrkin ◽  
A.N. Andreev ◽  
A.A. Lebedev ◽  
M.G. Rastegaeva ◽  
V.E. Chelnokov

1999 ◽  
Vol 573 ◽  
Author(s):  
J. S. Hwan ◽  
G. S. Chang

ABSTRACTIn this study, we develop a novel approach to determine the surface Fermi level and the surface state densities of semiconductors. The built-in electric field and thus the surface barrier height are evaluated from the Franz-Keldysh oscillations in the PR spectra. Based on the thermionic-emission theory and current-transport theory, the surface state density as well as the pinning position of the surface Fermi level can be determined from the dependence of the surface barrier height on the pump beam intensity. Even though this method is significantly simpler, easier to perform, and time efficient compared with other approaches, the results obtained agree with the literature.


Sign in / Sign up

Export Citation Format

Share Document