Charge density and bare surface barrier height in GaN/AlGaN/GaN heterostructures: A modeling and simulation study

2018 ◽  
Vol 28 (8) ◽  
pp. e21455 ◽  
Author(s):  
Joydeep Ghosh ◽  
Dipankar Saha ◽  
Swaroop Ganguly ◽  
Apurba Laha
Keyword(s):  
Modeling And Simulation ◽  
Charge Density ◽  
Barrier Height ◽  
Simulation Study ◽  
Surface Barrier ◽  
Bare Surface

Analytical modeling of bare surface barrier height and charge density in AlGaN/GaN heterostructures

2012 ◽  
Vol 101 (10) ◽  
pp. 103505 ◽  
Author(s):  
Nitin Goyal ◽  
Benjamin Iñiguez ◽  
Tor A. Fjeldly
Keyword(s):  
Charge Density ◽  
Barrier Height ◽  
Analytical Modeling ◽  
Surface Barrier ◽  
Bare Surface

Impact of Gate Metal on Surface States Distribution and Effective Surface Barrier Height in AlGaN/GaN Heterostructures

2013 ◽  
Vol 1538 ◽  
pp. 335-340 ◽  
Author(s):  
Nitin Goyal ◽  
Tor A. Fjeldly
Keyword(s):  
Barrier Height ◽  
Surface States ◽  
Surface Barrier ◽  
Metal Gate ◽  
Effective Surface ◽  
Barrier Layers ◽  
Donor Density ◽  
Model Predictions ◽  
Surface Donor ◽  
Bare Surface

ABSTRACTA physics based model is presented to describe the surface donor density distribution for metal/AlGaN/GaN structures. This model partly relies on experimental observations to describe the reduction that takes place in surface donor density when the metal gate is deposited. This new model is based on our previous work on the bare surface barrier height for both unrelaxed and partially relaxed barrier layers. The model predictions are consistent with reported experimental data.

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