Sealing of low-k dielectric (k=2.0) with self-assembled monolayers (SAMs) for the atomic layer deposition (ALD) of TiN

2013 ◽  
Vol 1559 ◽  
Author(s):  
Yiting Sun ◽  
Elisabeth Levrau ◽  
Michiel Blauw ◽  
Johan Meersschaut ◽  
Patrick Verdonck ◽  
...  
Keyword(s):  
Atomic Layer ◽  
Self Assembled Monolayers ◽  
Low Dielectric Constant ◽  
Hydroxyl Groups ◽  
Low Dielectric ◽  
Tin Film ◽  
Layer Deposition ◽  
Pore Sealing ◽  
Assembled Monolayers ◽  
Low K

ABSTRACTIn this work, a novel low dielectric constant (low-k) pore sealing approach was engineered by depositing firstly a sub-2 nm SAMs and then a 3 nm TiN barrier film. The low-k film was pretreated by plasma to introduce hydroxyl groups onto the surface, followed by SAMs deposition. Then a TiN film was deposited from tetrakis(dimethylamino)titanium (TDMAT) via ALD as a dielectric barrier. Penetration of Ti atoms into low-k was measured and used to evaluate the sealing ability of SAMs. For the samples covered with SAMs, around 90% reduction of Ti atoms penetration was achieved. The pore radius was reduced to below 0.5 nm after the barrier deposition. The ∆k after pretreatment and after SAMs are 0.1 and 0.16, respectively.

The Effect of Ar/H2 Plasma Pretreatments on Porous K=2.0 Dielectrics for Pore Sealing by Self-Assembled Monolayers Deposition

2012 ◽  
Vol 195 ◽  
pp. 146-149 ◽  
Author(s):  
Y. Sun ◽  
J. Swerts ◽  
P. Verdonck ◽  
A. Maheshwari ◽  
J.L. Prado ◽  
...  
Keyword(s):  
Plasma Temperature ◽  
Self Assembled Monolayers ◽  
Hydroxyl Groups ◽  
K Value ◽  
Oh Groups ◽  
Surface Hydroxyl ◽  
Pore Sealing ◽  
Assembled Monolayers ◽  
Self Assembled ◽  
Low K

Self-assembled monolayers (SAMs) deposition is being recently explored to help sealing the pores of a k=2.0 material. In order to enable a covalent chemical low-k surface functionalization by SAMs, a hydroxyl groups density as high as 1 to 2.5 OH groups/nm2 is required. This surface modification must be carefully controlled to confine the k below 10%. In this paper, the effects of plasma temperature, time and power on the SAMs deposition and plasma-induced damage are investigated. The main findings are that there is always a trade-off between surface hydroxyl groups density and bulk damage. A thick modified layer allows the SAM molecules to penetrate inside the pores which results in a decreased porosity and an increased k value with respect to correspondent plasma-treated pristine substrates.

Atomic Layer Deposition of Tantalum Nitride on Organosilicate and Organic Polymerbased Low Dielectric Constant Materials

2004 ◽  
Vol 812 ◽  
Author(s):  
Oscar van der Straten ◽  
Yu Zhu ◽  
Jonathan Rullan ◽  
Katarzyna Topol ◽  
Kathleen Dunn ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Tantalum Nitride ◽  
Experimental Methodology ◽  
Low Dielectric Constant ◽  
Adhesion Properties ◽  
Low Dielectric ◽  
Layer Deposition ◽  
Low K

AbstractA previously developed metal-organic atomic layer deposition (ALD) tantalum nitride (TaNx) process was employed to investigate the growth of TaNx liners on low dielectric constant (low-k) materials for liner applications in advanced Cu/low-k interconnect metallization schemes. ALD of TaNx was performed at a substrate temperature of 250°C by alternately exposing low-k materials to tertbutylimido-tris(diethylamido)tantalum (TBTDET) and ammonia (NH3), separated by argon purge steps. The dependence of TaNx film thickness on the number of ALD cycles performed on both organosilicate and organic polymer-based low-k materials was determined and compared to baseline growth characteristics of ALD TaNx on SiO2. In order to assess the effect of the deposition of TaNx on surface roughness, atomic force microscopy (AFM) measurements were carried out prior to and after the deposition of TaNx on the low-k materials. The stability of the interface between TaNx and the low-k materials after thermal annealing at 350°C for 30 minutes was studied by examining interfacial roughness profiles using cross-sectional imaging in a high-resolution transmission electron microscope (HR-TEM). The wetting and adhesion properties of Cu/low-k were quantified using a solid-state wetting experimental methodology after integration of ALD TaNx liners with Cu and low-k dielectrics.

Pore Sealing of Porous Ultralow-k Dielectrics by Self-Assembled Monolayers Combined with Atomic Layer Deposition

2012 ◽  
Vol 1 (2) ◽  
pp. P42-P44 ◽  
Author(s):  
S. Armini ◽  
J. L. Prado ◽  
J. Swerts ◽  
Y. Sun ◽  
M. Krishtab ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Self Assembled Monolayers ◽  
Layer Deposition ◽  
Pore Sealing ◽  
Assembled Monolayers ◽  
Self Assembled

scholarly journals Modifying hydrophilic properties of polyurethane acryl paint substrates by atomic layer deposition and self-assembled monolayers

RSC Advances ◽  
2020 ◽  
Vol 10 (57) ◽  
pp. 34333-34343
Author(s):  
D. Beitner ◽  
I. Polishchuk ◽  
E. Asulin ◽  
B. Pokroy
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Self Assembled Monolayers ◽  
Surface Wetting ◽  
Wetting Properties ◽  
Layer Deposition ◽  
Assembled Monolayers ◽  
Self Assembled

A process of atomic layer deposition (ALD) combined with self-assembled monolayers (SAMs) was used to investigate the possible modification of polyurethane (PUR) paint surface wetting properties without altering their original hue.

Controlling Area-Selective Atomic Layer Deposition of HfO2 Dielectric by Self-assembled Monolayers

2004 ◽  
Vol 811 ◽  
Author(s):  
Rong Chen ◽  
Hyoungsub Kim ◽  
Paul C. McIntyre ◽  
Stacey F. Bent
Keyword(s):  
Atomic Layer Deposition ◽  
Chain Length ◽  
Steric Effect ◽  
Atomic Layer ◽  
High Reactivity ◽  
Self Assembled Monolayers ◽  
Organic Monolayers ◽  
Layer Deposition ◽  
Assembled Monolayers ◽  
Self Assembled

ABSTRACTA series of self-assembled molecules have been investigated as deactivating agents for the HfO2 atomic layer deposition (ALD). Three important factors of self-assembled monolayers (SAMs) deactivating efficiency towards ALD--chain length, reactivity and steric effect--have been investigated and discussed as well as the initial blocking mechanism of this process. This investigation shows that in order to achieve satisfactory deactivation, it is crucial to choose high reactivity, low steric effect molecules with certain chain length to form condensed, high hydrophobic organic monolayers.

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