Unipolar Switching Behavior in Highly Crystalline Hexagonal Boron Nitride

2014 ◽  
Vol 1658 ◽  
Author(s):  
Nikhil Jain ◽  
Robin B. Jacobs-Gedrim ◽  
Bin Yu
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Hexagonal Boron Nitride ◽  
Electrical Characterization ◽  
Information Storage ◽  
Switching Behavior ◽  
Reconfigurable Logic ◽  
Substitutional Doping ◽  
Capacitance Voltage

ABSTRACTWe observed resistive switching in highly crystalline layered insulator hexagonal boron nitride (h-BN) under electric field in a nano-device configuration. Two distinct resistive states were observed in the 2D material heterostack. Electrical characterization using capacitance-voltage approach further revealed the role of h-BN as the active switching element. The switching behavior could be attributed to substitutional doping of h-BN under electric field present in the active region, possibly resulting in the formation of multi-element complex in which electrical conductivity depends on the amount of substituted dopant in the boron nitride crystal lattice. Since switching is observed independent of the direction of electric field, it is unipolar in nature. The observed memristance phenomenon in layered insulator may be potentially used in the form of NVM, providing possible direction to implement information storage or reconfigurable logic applications.

Role of size of hexagonal boron nitride particles on tribo-performance of nano and micro oils

2018 ◽  
Vol 30 (8) ◽  
pp. 441-456 ◽  
Author(s):  
Manoj Kumar Gupta ◽  
Jayashree Bijwe ◽  
Meghashree Padhan
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride

scholarly journals Терагерцовые дисперсия и усиление при стриминге электронов в графене при 300 K

2020 ◽  
Vol 54 (9) ◽  
pp. 888
Author(s):  
А.А. Андронов ◽  
В.И. Позднякова
Keyword(s):  
Boron Nitride ◽  
Electric Field ◽  
Terahertz Radiation ◽  
High Resistance ◽  
Applied Voltage ◽  
Momentum Space ◽  
Hexagonal Boron Nitride ◽  
Strong Electric Field ◽  
Microwave Generator ◽  
Time Frequency

Abstract We interpret the recent observations of Otsuji’s team (Sendai) on switching from absorption to amplification at a temperature of T = 300 K during the passage of terahertz radiation through hexagonal boron nitride–graphene sandwiches with multiple gates on the surface with an increase in the electric field in graphene. It is shown that these effects are related to dispersion and negative conductivity near the transit-time frequency of electrons in momentum space under streaming (anisotropic distribution) in graphene in a strong electric field. On the basis of these data, a universal tunable terahertz source is proposed, which has the form of a graphene-containing sandwich with a high-resistance silicon wafer (a cavity) with an applied voltage. This terahertz cavity is a complete analog of the microwave generator implemented on an InP chip by Vorobev’s team (St. Petersburg).

scholarly journals It's a Gas: Oxidative Dehydrogenation of Propane over Boron Nitride Catalysts

2020 ◽  
Author(s):  
Peter Kraus ◽  
R. Peter Lindstedt
Keyword(s):  
Low Temperature ◽  
Boron Nitride ◽  
Gas Phase ◽  
Oxidative Dehydrogenation ◽  
Hexagonal Boron Nitride ◽  
Combustion Model ◽  
Low Temperature Combustion ◽  
Oxidative Dehydrogenation Of Propane ◽  
Temperature Combustion

We investigate the role of gas-phase phenomena in the heterogeneous oxidative dehydrogenation of propane over hexagonal boron nitride. We apply a recently developed gas-phase combustion model for low-temperature combustion of propane and couple it with several surface microkinetic mechanisms to probe the selectivity limits using the open-source flame solver Cantera. We show that while the conversion of propane is surface-driven, the selectivities are significantly influenced by the gas-phase, especially when dilute catalyst beds are used.<br>

scholarly journals AB-stacked nanosheet-based hexagonal boron nitride

2021 ◽  
Vol 77 (2) ◽  
Author(s):  
Jae-Kap Lee ◽  
Jin-Gyu Kim ◽  
K. P. S. S. Hembram ◽  
Seunggun Yu ◽  
Sang-Gil Lee
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Metastable Phase ◽  
Stacking Sequence ◽  
Lateral Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
High Pressure High Temperature ◽  
Crystalline Growth

Hexagonal boron nitride (h-BN) has been generally interpreted as having an AA stacking sequence. Evidence is presented in this article indicating that typical commercial h-BN platelets (∼10–500 nm in thickness) exhibit stacks of parallel nanosheets (∼10 nm in thickness) predominantly in the AB sequence. The AB-stacked nanosheet occurs as a metastable phase of h-BN resulting from the preferred texture and lateral growth of armchair (110) planes. It appears as an independent nanosheet or unit for h-BN platelets. The analysis is supported by simulation of thin AB films (2–20 layers), which explains the unique X-ray diffraction pattern of h-BN. With this analysis and the role of pressure in commercial high-pressure high-temperature sintering (driving nucleation and parallelizing the in-plane crystalline growth of the nuclei), a growth mechanism is proposed for 2D h-BN (on a substrate) as `substrate-induced 2D growth', where the substrate plays the role of pressure.

Analysis of the fluorescence of mechanically processed defect-laden hexagonal boron nitride and the role of oxygen in catalyst deactivation

2019 ◽  
Vol 118 (4) ◽  
pp. 153-158
Author(s):  
David J. Nash ◽  
Katerina L. Chagoya ◽  
Alan Felix ◽  
Fernand E. Torres-Davila ◽  
Tao Jiang ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Catalyst Deactivation ◽  
Hexagonal Boron Nitride

Role of defects in the process of graphene growth on hexagonal boron nitride from atomic carbon

2014 ◽  
Vol 105 (19) ◽  
pp. 191610 ◽  
Author(s):  
J. Dabrowski ◽  
G. Lippert ◽  
T. Schroeder ◽  
G. Lupina
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Atomic Carbon ◽  
Graphene Growth

scholarly journals Surfactant-exfoliated 2D hexagonal boron nitride (2D-hBN): role of surfactant upon the electrochemical reduction of oxygen and capacitance applications

2017 ◽  
Vol 5 (8) ◽  
pp. 4103-4113 ◽  
Author(s):  
Aamar F. Khan ◽  
Michael P. Down ◽  
Graham C. Smith ◽  
Christopher W. Foster ◽  
Craig E. Banks
Keyword(s):  
Boron Nitride ◽  
Electrochemical Reduction ◽  
Hexagonal Boron Nitride ◽  
Aqueous Media ◽  
Sodium Cholate ◽  
Electrochemical Reduction Of Oxygen

Surfactant-exfoliated 2D hexagonal boron nitride (2D-hBN) nanosheets are fabricated using the surfactant sodium cholate in aqueous media and are explored towards the electrochemical reduction of oxygen.

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