Electrical and Photo-Induced Effects in Graphene Channels When Interfaced with Quantum Dots

Semiconductor Quantum Dots ◽

Light Illumination ◽

Electrical Characteristics ◽

Channel Response ◽

ABSTRACTField effect transistors with graphene channels were interfaced with arrays of semiconductor quantum dots (QD). The electrical characteristics of the elements were assessed. The channel response to white light illumination was also assessed as a function of drain-source and gate-source biases.

Graphene Channels Interfaced with Quantum Dots in Field Effect Transistors: Electrical and Photo-Induced Effects

MRS Advances ◽

10.1557/adv.2016.106 ◽

2016 ◽

Vol 1 (22) ◽

pp. 1597-1603

Author(s):

Xin Miao ◽

Samarth Trivedi ◽

Haim Grebel

Keyword(s):

Field Effect ◽

Chemical Vapor ◽

Hole Array ◽

Light Illumination ◽

Anodized Aluminum ◽

Transistor Channel ◽

Anodized Aluminum Oxide ◽

Hexagonal Hole ◽

ABSTRACTGraphene-based field effect transistors (GFETs) were assessed when interfaced with well separated and precisely placed core/shell CdSe/ZnS semiconductor quantum dot (QD) arrays. The QDs were imbedded in a hexagonal hole-array, which was formed in a layer of anodized aluminum oxide on Si/SiO2substrates. Graphene (single, or two layers), grown by chemical vapor deposition (CVD) on Cu foils, was transferred and placed on top of the QDs imbedded films and served as the transistor channel. Electrical characteristics under white-light illumination at various biasing conditions revealed that the photo current was decreasing upon increasing biasing. The device's photoluminescence (PL) as a function of both the drain-source and gate-source potentials also reduced as a function of the potential biases. We observed two maxima in the PL data while tilting the sample with respect to the incident laser beam. We attributed it to the optimal coupling between the incident and the emission wavelengths to resonating surface modes.

A simple and green synthesis of carbon quantum dots from coke for white light-emitting devices

RSC Advances ◽

10.1039/c9ra06946a ◽

2019 ◽

Vol 9 (58) ◽

pp. 33789-33793 ◽

Cited By ~ 1

Author(s):

Xiaoting Feng ◽

Yi Zhang

Keyword(s):

Quantum Dots ◽

Green Synthesis ◽

White Light ◽

Carbon Quantum Dots ◽

Light Illumination ◽

Light Emitting ◽

Light Emitting Devices ◽

CQDs are prepared from coke. The coke-based CQDs as a converter are applied to the white light illumination field.

Electrical characteristics and reliability properties of metal-oxide-semiconductor field-effect transistors with La2O3 gate dielectric

Journal of Applied Physics ◽

10.1063/1.2356902 ◽

2006 ◽

Vol 100 (7) ◽

pp. 074108 ◽

Cited By ~ 13

Author(s):

Chih-Hsiang Hsu ◽

Ming-Tsong Wang ◽

Joseph Ya-Min Lee

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics

Full field of view super-resolution imaging based on two static gratings and white light illumination

Applied Optics ◽

10.1364/ao.47.003080 ◽

2008 ◽

Vol 47 (17) ◽

pp. 3080 ◽

Cited By ~ 13

Author(s):

Javier García ◽

Vicente Micó ◽

Dan Cojoc ◽

Zeev Zalevsky

Keyword(s):

White Light ◽

Super Resolution ◽

Field Of View ◽

Light Illumination ◽

Full Field ◽

Resolution Imaging ◽

Light-emitting field-effect transistors with EQE over 20% enabled by a dielectric-quantum dots-dielectric sandwich structure

Science Bulletin ◽

10.1016/j.scib.2021.12.013 ◽

2021 ◽

Author(s):

Lingmei Kong ◽

Jialong Wu ◽

Yunguo Li ◽

Fan Cao ◽

Feijiu Wang ◽

...

Keyword(s):

Quantum Dots ◽

Field Effect ◽

Sandwich Structure ◽

Light Emitting

Photoswitchable organic field-effect transistors and memory elements comprising an interfacial photochromic layer

Chemical Communications ◽

10.1039/c5cc00711a ◽

2015 ◽

Vol 51 (28) ◽

pp. 6130-6132 ◽

Cited By ~ 47

Author(s):

Lyubov A. Frolova ◽

Pavel A. Troshin ◽

Diana K. Susarova ◽

Alexander V. Kulikov ◽

Nataliya A. Sanina ◽

...

Keyword(s):

Field Effect ◽

Memory Devices ◽

Electrical Characteristics ◽

Organic Field Effect Transistors

Memory devices with superior electrical characteristics were designed using an interfacial spirooxazine layer introduced between dielectric and semiconductor layers in OFETs.

New Interferometric Methods for Group-Delay Measurement Using White-Light Illumination

Ultrafast Processes in Spectroscopy ◽

10.1007/978-1-4615-5897-2_135 ◽

1996 ◽

pp. 607-611

Author(s):

A. P. Kovács ◽

G. Kurdi ◽

K. Osvay ◽

R. Szipöcs ◽

J. Hebling ◽

...

Keyword(s):

White Light ◽

Group Delay ◽

Light Illumination ◽

Delay Measurement ◽

Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes

Physical Chemistry Chemical Physics ◽

10.1039/c4cp00665h ◽

2014 ◽

Vol 16 (22) ◽

pp. 10861-10865 ◽

Cited By ~ 6

Author(s):

Jia Gao ◽

Yueh-Lin Loo

Keyword(s):

Carbon Nanotubes ◽

High Purity ◽

Field Effect ◽

Large Diameter ◽

Ozone Exposure ◽

Electrical Characteristics

Presorted, semiconducting carbon nanotubes in the channels of field-effect transistors undergo simultaneous p-doping and oxidation during ozone exposure.