Effect of ozone exposure on the electrical characteristics of high-purity, large-diameter semiconducting carbon nanotubes

2014 ◽  
Vol 16 (22) ◽  
pp. 10861-10865 ◽  
Author(s):  
Jia Gao ◽  
Yueh-Lin Loo
Keyword(s):  
Carbon Nanotubes ◽  
High Purity ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Large Diameter ◽  
Ozone Exposure ◽  
Electrical Characteristics

Presorted, semiconducting carbon nanotubes in the channels of field-effect transistors undergo simultaneous p-doping and oxidation during ozone exposure.

High‐Purity Monochiral Carbon Nanotubes with a 1.2 nm Diameter for High‐Performance Field‐Effect Transistors

2021 ◽  
pp. 2107119
Author(s):  
Yahui Li ◽  
Miaomiao Zheng ◽  
Jian Yao ◽  
Wenbin Gong ◽  
Yijun Li ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
High Purity ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors

80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes

2009 ◽  
Vol 94 (24) ◽  
pp. 243505 ◽  
Author(s):  
L. Nougaret ◽  
H. Happy ◽  
G. Dambrine ◽  
V. Derycke ◽  
J. -P. Bourgoin ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
High Purity ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Walled Carbon Nanotubes ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

scholarly journals Highly Efficient and Scalable Separation of Semiconducting Carbon Nanotubes via Weak Field Centrifugation

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Wieland G. Reis ◽  
R. Thomas Weitz ◽  
Michel Kettner ◽  
Alexander Kraus ◽  
Matthias Georg Schwab ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
High Purity ◽  
Field Effect ◽  
High Performance ◽  
Large Scale ◽  
Field Effect Transistors ◽  
Weak Field ◽  
Future Application ◽  
Scale Production ◽  
Highly Efficient

Abstract The identification of scalable processes that transfer random mixtures of single-walled carbon nanotubes (SWCNTs) into fractions featuring a high content of semiconducting species is crucial for future application of SWCNTs in high-performance electronics. Herein we demonstrate a highly efficient and simple separation method that relies on selective interactions between tailor-made amphiphilic polymers and semiconducting SWCNTs in the presence of low viscosity separation media. High purity individualized semiconducting SWCNTs or even self-organized semiconducting sheets are separated from an as-produced SWCNT dispersion via a single weak field centrifugation run. Absorption and Raman spectroscopy are applied to verify the high purity of the obtained SWCNTs. Furthermore SWCNT - network field-effect transistors were fabricated, which exhibit high ON/OFF ratios (105) and field-effect mobilities (17 cm2/Vs). In addition to demonstrating the feasibility of high purity separation by a novel low complexity process, our method can be readily transferred to large scale production.

DESIGN FEATURES OF NANOTRANSISTORS BASED ON CARBON TUBES

2021 ◽  
Author(s):  
Марина Евгеньевна Сычева ◽  
Светлана Анатольевна Микаева
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Low Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Manufacturing Technology ◽  
Nanoscale Devices ◽  
Design Features

В статье рассмотрены основные типы CNTFET транзисторов, изготовленных на углеродных нанотрубках. Представлена классификация, особенности конструкции и основные этапы технологии изготовления CNTFET транзисторов. Полевые транзисторы из углеродных нанотрубок (CNTFET) являются перспективными наноразмерными устройствами для реализации высокопроизводительных схем с очень плотной и низкой мощностью. The article considers the main types of CNTFET transistors made on carbon nanotubes. The classification, design features and the main stages of the CNTFET transistor manufacturing technology are presented. Carbon nanotube field effect transistors (CNTFET) are promising nanoscale devices for implementing high-performance circuits with very dense and low power.

Photoswitchable organic field-effect transistors and memory elements comprising an interfacial photochromic layer

2015 ◽  
Vol 51 (28) ◽  
pp. 6130-6132 ◽  
Author(s):  
Lyubov A. Frolova ◽  
Pavel A. Troshin ◽  
Diana K. Susarova ◽  
Alexander V. Kulikov ◽  
Nataliya A. Sanina ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Memory Devices ◽  
Electrical Characteristics ◽  
Organic Field Effect Transistors

Memory devices with superior electrical characteristics were designed using an interfacial spirooxazine layer introduced between dielectric and semiconductor layers in OFETs.

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