Thermally-Assisted Pulsed-Laser Annealing of SOS

1980 ◽  
Vol 1 ◽  
Author(s):  
Masayoshi Yamada ◽  
Ken-Ichi Yamazaki ◽  
Hisakazu Kotani ◽  
Keiichi Yamamoto ◽  
Kenji Abe
Keyword(s):  
Residual Strain ◽  
Room Temperature ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Raman Shift ◽  
Crystal Silicon ◽  
Depolarization Factor ◽  
Pulsed Laser Annealing ◽  
Residual Strains

ABSTRACTThermally-assisted pulsed-laser annealing has been performed on ion-implanted silicon-on-sapphire(SOS) by irradiating Q-switched(20 nsec) ruby laser light during thermally heating. Raman scattering measurements have been made to estimate the residual strain of the annealed SOS. It was observed that Raman shift of SOS annealed in the temperature range of 400°C to 500°C was very close to that of single crystal silicon and the depolarization factor(the Raman intensity ratio of allowed z(xy)z to forbidden z(xx)z scattering configuration) was infinite, while Raman shift of SOS annealed at room temperature was shifted down to about 5 cm-1 and the depolarization factor was finite. It was found that the residual strain of SOS was relieved by the thermally-assisted pulsed-laser annealing, but the residual strain of SOS annealed at room temperature was inhomogeneous and attained to 7×10−3. The annealing temperature dependences of the residual strains were not explained well with a strictly thermal melting and recrystallization model in conjunction with the thermal expansion difference between silicon and sapphire, and suggested to need a new model.

Preferential Crystallization of β-FeSi2 from Micro-droplets Generated by Laser Ablation.

2004 ◽  
Vol 848 ◽  
Author(s):  
Aiko Narazaki ◽  
Tadatake Sato ◽  
Yoshizo Kawaguchi ◽  
Hiroyuki Niino
Keyword(s):  
Laser Ablation ◽  
Room Temperature ◽  
Crystallization Behavior ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Excimer Laser Ablation ◽  
Pulsed Laser Annealing ◽  
Molten Droplets ◽  
Equilibrium Process ◽  
Krf Excimer Laser

ABSTRACTβ-FeSi2 was successfully fabricated at room temperature via the deposition of molten micro-droplets generated by the KrF excimer laser ablation. Only the molten droplets precipitated as the β-FeSi2 crystalline phase on a silicon substrate kept even at room temperature, whereas the rest of film was amorphous. The crystallization behavior of micro-droplets has been discussed in the light of non-equilibrium process due to rapid cooling on the substrate. After the deposition, pulsed laser annealing was also performed in order to improve the crystallinity of the β-FeSi2 microprecipitates-containing film.

Relief of Residual Strain in Silicon-on-Sapphire by Heat-Assisted Pulsed-Laser Annealing

1981 ◽  
Vol 20 (5) ◽  
pp. L371-L374 ◽  
Author(s):  
Ken-ichi Yamazaki ◽  
Masayoshi Yamada ◽  
Keiichi Yamamoto ◽  
Kenji Abe
Keyword(s):  
Residual Strain ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Formation of buried Sb dopant profiles in silicon by pulsed laser epitaxy

1993 ◽  
Vol 8 (4) ◽  
pp. 841-846
Author(s):  
R.J. Carolissen ◽  
D.K. Knoesen ◽  
W.C. Sinke ◽  
R. Pretorius
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
No Oxidation ◽  
Surface Layers ◽  
Crystal Silicon ◽  
State Diffusion ◽  
Degree Of Oxidation ◽  
Minimum Yield ◽  
Dopant Profiles

In this investigation buried Sb dopant profiles in single crystal silicon have been formed from evaporated layers using laser annealing. For irradiations carried out in air, severe oxidation of the surface layers inhibited epitaxy. Oxygen concentrations as high as 5 × 1017 atoms/cm2 (equivalent to about 105 nm SiO2) were measured. It was found that both the thin (less than 3 nm) Sb layer and the free volume in the a-Si, deposited by evaporation onto a cold substrate, need to be present for this degree of oxidation to take place. However, when silicon was evaporated onto a substrate heated to 350 °C, dense packing of the silicon atoms was obtained and even for irradiations in air good epitaxy (minimum yield of 7%) and no oxidation occurred. To form buried Sb profiles, laser energies only slightly higher than the threshold for epitaxy were used to prevent excessive spreading due to an increase in liquid state diffusion obtained at higher energies. Under these conditions the width of the buried Sb profile was typically about 120 nm, and up to 90% of the Sb atoms were found to occupy lattice sites.

Pulsed Laser Annealing of Al, Ni, and MgO Containing Nickel Precipitates

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Thermal Stresses ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Dislocation Loops ◽  
Vacancy Loops ◽  
Pulsed Laser Annealing ◽  
Melting Threshold

ABSTRACTWe have investigated the generation of point defects and dislocations, and the formation of dislocation loops as a function of pulse energy density in laser annealed Al, Ni, and MgO containing nickel precipitates. In the case of Al where vacancies are mobile above 200 K, mostly vacancy loops were observed at room temperature in laser melted layers. Dislocations are formed below the laser-melted layers as well as in specimens treated with pulses below the melting threshold, due to thermal stresses. In the case of Ni (where vacancies are mobile above 373 K) the microstructure in room temperature laser annealed specimens consists of primarily dislocations and their tangles. In MgO:Ni crystals, enough laser energy was absorbed to melt nickel precipitates. The dislocation structure around the precipitates and the transformation of nickel precipitates from coherent into incoherent, provided information on melting and crystal growth of these precipitates.

HREM observation of dislocations near room temperature fractures in silicon

1988 ◽  
Vol 46 ◽  
pp. 892-893
Author(s):  
M. H. Rhee ◽  
W. A. Coghlan
Keyword(s):  
Cross Section ◽  
Room Temperature ◽  
Single Crystal Silicon ◽  
Dislocation Nucleation ◽  
Back Side ◽  
Ion Milling ◽  
Crystal Silicon ◽  
Flat Surfaces ◽  
Induced Fractures ◽  
Vicker’S Microhardness

Silicon is believed to be an almost perfectly brittle material with cleavage occurring on {111} planes. In such a material at room temperature cleavage is expected to occur prior to any dislocation nucleation. This behavior suggests that cleavage fracture may be used to produce usable flat surfaces. Attempts to show this have failed. Such fractures produced in semiconductor silicon tend to occur on planes of variable orientation resulting in surfaces with a poor surface finish. In order to learn more about the mechanisms involved in fracture of silicon we began a HREM study of hardness indent induced fractures in thin samples of oxidized silicon.Samples of single crystal silicon were oxidized in air for 100 hours at 1000°C. Two pieces of this material were glued together and 500 μm thick cross-section samples were cut from the combined piece. The cross-section samples were indented using a Vicker's microhardness tester to produce cracks. The cracks in the samples were preserved by thinning from the back side using a combination of mechanical grinding and ion milling.

Pulsed laser annealing of zinc implanted GaAs

1978 ◽  
Vol 14 (4) ◽  
pp. 85 ◽  
Author(s):  
S.S. Kular ◽  
B.J. Sealy ◽  
K.G. Stephens ◽  
D.R. Chick ◽  
Q.V. Davis ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Optical and electrical correlation effects in ZnO nanostructures: Role of pulsed laser annealing

2021 ◽  
Vol 115 ◽  
pp. 111028
Author(s):  
Hayder J. Al-Asedy ◽  
Shuruq A. Al-khafaji ◽  
S.K. Ghoshal
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Zno Nanostructures ◽  
Correlation Effects ◽  
Pulsed Laser Annealing

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

scholarly journals Devitrification of thin film Cu-Zr metallic glass via ultrashort pulsed laser annealing

2021 ◽  
pp. 161437
Author(s):  
J. Antonowicz ◽  
P. Zalden ◽  
K. Sokolowski-Tinten ◽  
K. Georgarakis ◽  
R. Minikayev ◽  
...  
Keyword(s):  
Thin Film ◽  
Metallic Glass ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Ultrashort Pulsed Laser

Dynamic behaviors of pulsed-laser annealing in ion-implanted silicon studied by measuring the optical reflectance

1979 ◽  
Author(s):  
Kouichi Murakami ◽  
Kenji Gamo ◽  
Susumu Namba ◽  
Mitsuo Kawabe ◽  
Yoshinobu Aoyagi ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Optical Reflectance ◽  
Dynamic Behaviors ◽  
Pulsed Laser Annealing ◽  
Ion Implanted
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