Ion Beam Deposition: Damage and Epitaxy

1988 ◽  
Vol 100 ◽  
Author(s):  
D G Armour
Keyword(s):  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Solid Surfaces ◽  
Initial Growth ◽  
Near Surface ◽  
Growth Technique ◽  
Atomic Displacements ◽  
Current Densities ◽  
Low Energy Ions

ABSTRACTThe bombardment of solid surfaces with ions in the energy range below about 150 eV, depending on the ion-substrate combination, results in a net growth of material on the surface. An ion beam facility capable of producing highly uniform, low energy beams of current densities in the range 10−2 to 1 Am−2 has been developed to study the potential of this growth technique for the fabrication of thin epitaxial films at low temperatures.The energy deposition associated with ion bombardment, which is considered to be responsible for the low temperature epitaxy capability, can also cause atomic displacements on the surface and near-surface regions of the substrate during initial growth and in the growing film. A study of the growth processes thus requires investigation of the damaging effects of low energy ion bombardment. In the present paper, fundamental aspects of the implantation and deposition of materials using very low energy ions will be discussed.

Ion Beam Deposition: Damage and Epitaxy

1987 ◽  
Vol 107 ◽  
Author(s):  
D G Armour
Keyword(s):  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Solid Surfaces ◽  
Initial Growth ◽  
Near Surface ◽  
Growth Technique ◽  
Atomic Displacements ◽  
Current Densities ◽  
Low Energy Ions

AbstractThe bombardment of solid surfaces with ions in the energy range below about 150 eV, depending on the ion-substrate combination, results in a net growth of material on the surface. An ion beam facility capable of producing highly uniform, low energy beams of current densities in the range 10-1 to 1 Am-1 has been developed to study the potential of this growth technique for the fabrication of thin epitaxial films at low temperatures.The energy deposition associated with ion bombardment, which is considered to be responsible for the low temperature epitaxy capability, can also cause atomic displacements on the surface and near-surface regions of the substrate during initial growth and in the growing film. A study of the growth processes thus requires investigation of the damaging effects of low energy ion bombardment. In the present paper, fundamental aspects of the implantation and deposition of materials using very low energy ions will be discussed.

Modification Of Properties Of Ion-Beam-Sputtered Yttrium-Oxide Thin Films By Low-Energy Ion Bombardment

1991 ◽  
Vol 223 ◽  
Author(s):  
K. A. Klemm ◽  
L. F. Johnson ◽  
M. B. Moran
Keyword(s):  
Yttrium Oxide ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Ion Energy ◽  
Deposited Energy ◽  
Current Densities ◽  
Argon Ions ◽  
Substrate Temperatures ◽  
Argon Content

ABSTRACTThe effect of low-energy ion bombardment on ion-beam-sputtered yttrium-oxide films was studied. Yttria films were subjected to argon ions accelerated by a potential of up to 500 V with current densities of up to 8 μA/cm2 and were deposited at differing substrate temperatures. Yttria films bombarded during deposition were found to be amorphous, and trends observed with increased ion energy include reduced amount of residual compressive stress, increased argon content, and decreased refractive index, depending on deposited energy and substrate temperature.

Epitaxy and Chemical Reactions During Thin Film Formation from Low Energy Ions New Kinetic Pathways, New Phases and New Properties

1991 ◽  
Vol 236 ◽  
Author(s):  
Nicole Herbots ◽  
O.C. Hellman ◽  
O. Vancauwenberghe
Keyword(s):  
Thin Film ◽  
Chemical Reactions ◽  
Degrees Of Freedom ◽  
Film Growth ◽  
Film Formation ◽  
Chemical Reactivity ◽  
Ion Beam ◽  
Low Energy ◽  
Low Energy Ions ◽  
Beam Deposition

AbstractThree important effects of low energy direct Ion Beam Deposition (IBD) are the athermal incorporation of material into a substrate, the enhancement of atomic mobility in the subsurface, and the modification of growth kinetics it creates. All lead to a significant lowering of the temperature necessary to induce epitaxial growth and chemical reactions. The fundamental understanding and new applications of low temperature kinetics induced by low energy ions in thin film growth and surface processing of semiconductors are reviewed. It is shown that the mechanism of IBD growth can be understood and computed quantitatively using a simple model including ion induced defect generation and sputtering, elastic recombination, thermal diffusion, chemical reactivity, and desorption The energy, temperature and dose dependence of growth rate, epitaxy, and chemical reaction during IBD is found to be controlled by the net recombination rate of interstitials at the surface in the case of epitaxy and unreacted films, and by the balance between ion beam decomposition and phase formation induced by ion beam generated defects in the case of compound thin films. Recent systematic experiments on the formation of oxides and nitrides on Si, Ge/Si(100), heteroepitaxial SixGe1−x/Si(100) and GaAs(100) illustrate applications of this mechanism using IBD in the form of Ion Beam Nitridation (IBN), Ion Beam Oxidation (IBO) and Combined Ion and Molecular beam Deposition (CIMD). It is shown that these techniques enable (1) the formation of conventional phases in conditions never used before, (2) the control and creation of properties via new degrees of freedom such as ion energy and lowered substrate temperatures, and (3) the formation of new metastable heterostructures that cannot be grown by pure thermal means.

Nanostructural Evolution of Au on Silica Surfaces Exposed to Low Energy Ions

2006 ◽  
Vol 929 ◽  
Author(s):  
Volha Abidzina ◽  
I. Tereshko ◽  
I. Elkin ◽  
R.L. Zimmerman ◽  
S. Budak ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Discharge Plasma ◽  
Ion Irradiation ◽  
Absorption Spectrometry ◽  
Low Energy ◽  
Glow Discharge Plasma ◽  
Near Surface ◽  
Silica Surfaces ◽  
Low Concentrations ◽  
Low Energy Ions

ABSTRACTWe studied the effects of the low energy ions to induce nucleation of nanoscale crystals on and near surface of silica nano-layer containing low concentrations of Au. Suprasil substrates were coated with thin layer of gold followed by low-energy ion irradiation in a glow discharge plasma. The formation of nanoscale crystals due to low energy ion irradiation were then studied using RBS and optical absorption spectrometry.

Surface and Near-Surface Atom Dynamics During Low Energy Xe Ion Bombardment of Si and Fcc Surfaces

1990 ◽  
Vol 193 ◽  
Author(s):  
M. V. R. Murty ◽  
H. S. Lee ◽  
Harry A. Atwater
Keyword(s):  
Molecular Dynamics ◽  
Surface Layer ◽  
Ion Bombardment ◽  
Low Energy ◽  
Surface Processes ◽  
Defect Production ◽  
Near Surface ◽  
Qualitative Nature ◽  
Dynamics Simulations ◽  
Atom Dynamics

ABSTRACTSurface and near-surface processes have been studied during low energy Xe ion bombardment of Si (001) and fcc surfaces using molecular dynamics simulations. Defect production is enhanced near the surface of smooth Si (001) surfaces with respect to the bulk in the energy range 20–150 eV, but is not confined exclusively to the surface layer. The extent and qualitative nature of bombardment-induced dissociation of small fcc islands on an otherwise smooth fcc (001) surface is found to depend strongly on island cohesive energy.

Neutralisation behavior in scattering of low energy ions from solid surfaces

1976 ◽  
Vol 132 ◽  
pp. 559-564 ◽  
Author(s):  
H.H. Brongersma ◽  
T.M. Buck
Keyword(s):  
Low Energy ◽  
Solid Surfaces ◽  
Low Energy Ions

Ion beam stimulated reactions in metallic alloys

1988 ◽  
Vol 46 ◽  
pp. 490-491
Author(s):  
L. K. Mansur ◽  
E. H. Lee
Keyword(s):  
Vacancy Concentration ◽  
Ion Beam ◽  
Relaxation Times ◽  
Solute Segregation ◽  
Metallic Alloys ◽  
Defect Production ◽  
Ion Beam Mixing ◽  
Near Surface ◽  
Atomic Displacements ◽  
Compositional Changes

Ion implantation, ion beam mixing, and ion beam stimulated reactions can be discussed as somewhat distinct but related processes. The first two emphasize compositional changes in near-surface regions. The last relies mainly on microstructural and precipitation reactions caused by atomic displacements. In this last area much of the work has been carried out in metallic alloys. Here we summarize experiments in our laboratory that cover several ion-beam-induced reactions in Fe-15Ni-15Cr base alloys, to provide a perspective on related work in materials other than silicon. The techniques and mechanistic interpretations of results are applicable to a variety of materials.This is a powerful way to examine the interplay of characteristic relaxation times. Intervals of high point defect production and resultant processes, such as solute segregation and drift-directed clustering, are alternated with thermal annealing. Remarkable changes with respect to either steady bombardment or thermal aging at the same temperature can be produced. Figure 1(a) shows theoretically calculated fluctuating vacancy concentration in a steady irradiation.

Localization of Electrically Active Extended Defects in GaN Using a DualBeam FIB

2018 ◽  
Author(s):  
T. Nshanian ◽  
B. Tracy ◽  
H. Ho
Keyword(s):  
Sample Preparation ◽  
Focused Ion Beam ◽  
Piezoelectric Materials ◽  
Ion Beam ◽  
Low Energy ◽  
Threading Dislocations ◽  
Extended Defects ◽  
Electrical Fields ◽  
Low Energy Ions ◽  
Piezoelectric Charge

Abstract The Dual Focused Ion Beam (DFIB has been used to expose electrical fields associated with the charge of electrically active extended defects (ED) – (e.g. threading dislocations - TDs) in GaN structures. The localized electrical fields above electrically active defects in piezoelectric materials are shown to capture sputtered low energy ions, turning them back toward the surface and redepositing them on top of defects (TDs), forming Gallium-rich islands. This “Ga droplet” decorates EDs and significantly simplifies the process of locating EDs for TEM sample preparation and analyses. The size and shape of the Ga islands is correlated with the accumulated piezoelectric charge density at the EDs.

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