Modification Of Properties Of Ion-Beam-Sputtered Yttrium-Oxide Thin Films By Low-Energy Ion Bombardment

1991 ◽  
Vol 223 ◽  
Author(s):  
K. A. Klemm ◽  
L. F. Johnson ◽  
M. B. Moran
Keyword(s):  
Yttrium Oxide ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Ion Energy ◽  
Deposited Energy ◽  
Current Densities ◽  
Argon Ions ◽  
Substrate Temperatures ◽  
Argon Content

ABSTRACTThe effect of low-energy ion bombardment on ion-beam-sputtered yttrium-oxide films was studied. Yttria films were subjected to argon ions accelerated by a potential of up to 500 V with current densities of up to 8 μA/cm2 and were deposited at differing substrate temperatures. Yttria films bombarded during deposition were found to be amorphous, and trends observed with increased ion energy include reduced amount of residual compressive stress, increased argon content, and decreased refractive index, depending on deposited energy and substrate temperature.

Effects of the Combined Exposure of Silicon to Beams of Low-Energy Argon Ions and Halogen-Containing Molecules

1984 ◽  
Vol 38 ◽  
Author(s):  
A. W. Kolfschoten
Keyword(s):  
Experimental Data ◽  
Ion Beam ◽  
Surface Region ◽  
Ion Bombardment ◽  
Low Energy ◽  
Reactive System ◽  
Combined Exposure ◽  
Si Substrate ◽  
Model Based ◽  
Argon Ions

AbstractThis paper reviews our results of modulated ion beam studies of the ion-assisted etching of Si. It is shown that the experimental data of the Si(C12, Ar+) reactive system can be described by a model based upon an ion-bombardment induced amorphousness of the Si substrate and the formation of a mixed surface region of several atomic layers of chlorine, argon and silicon. It is also shown that the model is in general agreement with the experimental data of the Si(XeF2, Ar+) and C(H, Ar+) systems.

Ion Beam Deposition: Damage and Epitaxy

1987 ◽  
Vol 107 ◽  
Author(s):  
D G Armour
Keyword(s):  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Solid Surfaces ◽  
Initial Growth ◽  
Near Surface ◽  
Growth Technique ◽  
Atomic Displacements ◽  
Current Densities ◽  
Low Energy Ions

AbstractThe bombardment of solid surfaces with ions in the energy range below about 150 eV, depending on the ion-substrate combination, results in a net growth of material on the surface. An ion beam facility capable of producing highly uniform, low energy beams of current densities in the range 10-1 to 1 Am-1 has been developed to study the potential of this growth technique for the fabrication of thin epitaxial films at low temperatures.The energy deposition associated with ion bombardment, which is considered to be responsible for the low temperature epitaxy capability, can also cause atomic displacements on the surface and near-surface regions of the substrate during initial growth and in the growing film. A study of the growth processes thus requires investigation of the damaging effects of low energy ion bombardment. In the present paper, fundamental aspects of the implantation and deposition of materials using very low energy ions will be discussed.

Properties of Al2O3 films prepared by argon ion assisted deposition

1994 ◽  
Vol 9 (10) ◽  
pp. 2688-2694 ◽  
Author(s):  
Mansour S. Al-Robaee ◽  
Ghanashyam M. Krishna ◽  
G.N. Subanna ◽  
Narasimha K. Rao ◽  
S. Mohan
Keyword(s):  
Refractive Index ◽  
Current Density ◽  
Ion Beam ◽  
Ion Energy ◽  
Argon Ions ◽  
Beam Parameters ◽  
Substrate Temperatures ◽  
Argon Ion ◽  
Al2o3 Films ◽  
Deposited Films

Aluminum oxide films have been prepared by ion assisted deposition using argon ions with energy in the range 300 to 1000 eV and current density in the range 50 to 220 μA/cm2. The influence of ion energy and current density on the optical and structural properties has been investigated. The refractive index, packing density, and extinction coefficient are found to be very sensitive to the ion beam parameters and substrate temperatures. The as-deposited films were found to be amorphous and could be transformed into crystalline phase on annealing. However, the crystalline phases were different in films prepared at ambient and elevated substrate temperatures.

Ion Beam Deposition: Damage and Epitaxy

1988 ◽  
Vol 100 ◽  
Author(s):  
D G Armour
Keyword(s):  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Solid Surfaces ◽  
Initial Growth ◽  
Near Surface ◽  
Growth Technique ◽  
Atomic Displacements ◽  
Current Densities ◽  
Low Energy Ions

ABSTRACTThe bombardment of solid surfaces with ions in the energy range below about 150 eV, depending on the ion-substrate combination, results in a net growth of material on the surface. An ion beam facility capable of producing highly uniform, low energy beams of current densities in the range 10−2 to 1 Am−2 has been developed to study the potential of this growth technique for the fabrication of thin epitaxial films at low temperatures.The energy deposition associated with ion bombardment, which is considered to be responsible for the low temperature epitaxy capability, can also cause atomic displacements on the surface and near-surface regions of the substrate during initial growth and in the growing film. A study of the growth processes thus requires investigation of the damaging effects of low energy ion bombardment. In the present paper, fundamental aspects of the implantation and deposition of materials using very low energy ions will be discussed.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Ion Bombardment Effect on the Hardness of Ti(C,N,O) Films Prepared by Ion Beam Controlled Deposition (IBCD)

1992 ◽  
Vol 279 ◽  
Author(s):  
Chen Youshan ◽  
Sun Yilin ◽  
Zhang Fumin ◽  
Mou Haichuan ◽  
Tao Wei ◽  
...  
Keyword(s):  
Film Formation ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Advanced Technology ◽  
Preferential Growth ◽  
Ion Energy ◽  
Lattice Constants ◽  
Film Hardness ◽  
Pure Compounds ◽  
Controlled Deposition

Ion beam controlled deposition (IBCD) or ion beam assisted deposition (IB AD) of Ti(C,N,O) films has been investigated much in the last decade for both the advantage of this advanced technology and the promising properties of such materials. Ti(C,N,O) films are various solid solutions of interstitial compounds TiC, TiN and TiO of F.C.C structure with lattice constants lying between the values of the pure compounds. Some content of oxygen improves their wear resistance due to the lower fn;e enthalpies of such films in comparison with pure TiC and TiN films [1]. Many so-synthesizcd titanium carbide and titanium nitride films reported in published papers were actually of this sort as they often had more or less oxygen content from residual gas in vacuum. A number of papers were contributed to depict the texture and composition dependence of film on the arrival ratio of assisting ions versus deposited atoms (AR) as well as their mechanical properties [2–6]. However, the film formation mechanism in IBCD isn't quite clear yet, especially for cases with assisting ion energy of several to tens of keV. During a course to synthesize Ti(C,N,O) films by IBCD with the two beam technique, datum were accumulated. Based on a part of it, a previous paper on ion beam governed preferential growth in IBCD has been published [7]. This paper was aimed to search for the origin of ion bombardment effect on film hardness.

Ion Beam Assisted Deposition of Cubic Boron Nitride Thin Films

1991 ◽  
Vol 235 ◽  
Author(s):  
Daniel J. Kester ◽  
Russell Messier
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Boron Nitride ◽  
Ion Beam ◽  
Cubic Boron Nitride ◽  
Secondary Phase ◽  
Ion Energy ◽  
Ion Beam Assisted Deposition ◽  
Transmission Electron ◽  
Argon Ions

ABSTRACTBoron nitride thin films were grown using ion beam assisted deposition. Boron metal was evaporated, and the depositing film was bombarded by nitrogen and argon ions. The films were characterized using Fourier transform infrared spectroscopy, electron diffraction, transmission electron microscopy, and Rutherford backscattering. The thin films were found to be cubic boron nitride, consisting of 100–200 Å crystallites with a small amount of an amorphous secondary phase. The best conditions for depositing cubic boron nitride were found to be a substrate temperature of 400°C, bombardment by a 50:50 mixture of argon and nitrogen with a bombarding ion energy of 500 eV and a ratio of bombarding ions to depositing boron atoms of from 1.0 to 1.5 ions per atom.

Surface and Bulk Microstructural Modifications in Amorphous Carbon Films after Post-Growth Low Energy Ion Beam Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
P. Patsalas ◽  
S. Logothetidis
Keyword(s):  
Amorphous Carbon ◽  
Amorphous Matrix ◽  
Ion Beam ◽  
Carbon Films ◽  
Low Energy ◽  
Beam Irradiation ◽  
X Ray Diffraction ◽  
Ion Beam Irradiation ◽  
Ion Energy ◽  
X Ray

ABSTRACTWe present the crystallization effects occurring in sputtered amorphous Carbon (a-C) thin films deposited on Si induced by post-growth low energy (0.5-1.5 keV) Ar+ ion beam irradiation (IBI). The a-C films after IBI have the form of an amorphous matrix with embedded crystalline regions. X-ray diffraction and Electron Microscopy measurements identified the crystalline phases of carbon and SiC. We study in detail the effects of ion energy and fluence on the crystallization process. It was found that low fluence (∼2×1016 ions/cm2) of ions with an optimum ion energy (∼1.5 keV) promoted the diamond formation. X-Ray Reflectivity (XRR) and Spectroscopic Ellipsometry were used to study the amorphous matrix. XRR discriminated the IBI induced surface and bulk effects through the density and the a-C surface roughness, showing surface smoothing to be more prominent for low energy IBI.

1X Thin Films Prepared By Mass Separated Ion Beam Deposition

1994 ◽  
Vol 354 ◽  
Author(s):  
H. C. Hofsäss ◽  
C. Ronntng ◽  
U. Griesmeier ◽  
M. Gross
Keyword(s):  
Thermal Activation ◽  
Room Temperature ◽  
Ion Beam ◽  
Ir Absorption ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
Ion Energies ◽  
Substrate Temperatures ◽  
Absorption Measurements ◽  
Beam Deposition

AbstractWe have studied the growth and the properties of CN films prepared by deposition of mass separated 12C+ and 14N+ ions. The film thickness and density were determined as a function of ion energy between 20 eV and 500 eV and for substrate temperatures of 20 °C and 350 °C. Sputtering effects limit the maximum N concentration to about 30 - 40 at.% even for ion energies as low as 20 eV. IR absorption measurements indicate predominantly C-N and C=N bonding and an amorphous or strongly disordered CN-network. For room temperature deposited CN films with N concentrations up to 25 at.% I-V curves of metal-CN-metal devices show Frenkel-Poole behavior due to field-enhanced thermal activation of localized electrons. Films deposited at 350 °C have N concentrations below 15 at.% and graphitic properties like low resistivity and a density close to graphite.

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