Composition and Structure of Si3n4 Implanted with Ti AT 900°C
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ABSTRACTTi+ ions were implanted to high fluences (up to 5 × 1017 /cm2 ) into Si3N4 substrates heated to around 900°C. Composition vs depth profiles were obtained by RBS (in conjunction with RUMP analysis) and microstructures were examined by TEM. At a fluence of 4 × 1017 /cm2, the Si concentration was considerably reduced at the Ti peak depth but enriched near the surface. By 5 × 1017 /cm2, Si was nearly depleted from the implanted layer, leaving a Ti-rich nitride layer merging continuously into Si3N4. TEN detected TiN precipitates up to several pm in diameter, and coherent with Si3N4 crystallites. A Si-Ti-N ternary phase diagram is used to interpret the observed solid state reactions.
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1998 ◽
Vol 19
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pp. 577-586
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2014 ◽
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pp. 1393-1404
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pp. 1073-1080
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2015 ◽
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1963 ◽
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pp. 128-136
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