Reactions in Omcvd: Detection of Gas Phase Radicals In Gaas Deposition Under Single Gas-Surface Collision Conditions
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ABSTRACTLaser ionization mass spectrometry has been used to study the deposition of gallium from trimethylgallium with and without AsH3. The apparent Arrhenius activation energy for the production of gas-phase methyl radicals from trimethylgallium is measured to be 28 ± 2 kcal/mol in the presence of AsH3, about the same value as measured in the absence of AsH3. At a substrate temperature of 1150 K where gallium desorption is substantial, addition of AsH3 is found to increase methyl radical yield but drastically decrease gallium atom desorption. A mechanism is presented to describe the deposition of GaAs at low pressures under single gas-surface collision conditions.
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2010 ◽
Vol 58
(2)
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pp. 35-46
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1961 ◽
Vol 263
(1312)
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pp. 51-57
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1986 ◽
Vol 9
(1)
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pp. 65-65
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