Study of the Carrier Concentration Effect on Si Enhanced AlGaAs/GaAs Superlattice Mixing

1987 ◽  
Vol 102 ◽  
Author(s):  
Ping Mei ◽  
T. Venkatesan ◽  
S. A. Schwarz ◽  
N. G. Stoffel ◽  
J. P. Harbison ◽  
...  
Keyword(s):  
Carrier Concentration ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Mechanism ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
Concentration Effect ◽  
Power Dependence ◽  
Si Doping ◽  
Secondary Ion

ABSTRACTWe have investigated the carrier concentration effect on AlGaAs/GaAs superlattice mixing enhanced by Si doping. The Al0.01Ga0.99As/GaAs superlattice sample with various Si-doping concentrations was grown by molecular beam epitaxy (MBE). Secondary ion mass spectrometry (SIMS) and carrier concentration profiling were used to characterize the Al diffusion and the free-carrier concentration profiles. The Al diffusion coefficients at 800 C show a high power dependence on the free carrier concentration which is not consistent with a Ga vacancy diffusion mechanism. A possible explanation can be provided by a mechanism based on a Si pair diffusion model.

Near-Surface Aggregation of Sn In Heavily Sn-Doped GaAs Films Grown By Molecular Beam Epitaxy

1985 ◽  
Vol 43 ◽  
pp. 368-369
Author(s):  
S. H. Chen
Keyword(s):  
Molecular Beam Epitaxy ◽  
Cross Section ◽  
Electron Spectroscopy ◽  
Molecular Beam ◽  
Surface Segregation ◽  
Secondary Ion Mass Spectrometry ◽  
Specimen Preparation ◽  
Near Surface ◽  
Gaas Films ◽  
Secondary Ion

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.

Effect of free-carrier concentration on the phase transition and vibrational properties of VO2

2011 ◽  
Vol 99 (7) ◽  
pp. 071902 ◽  
Author(s):  
M. Nazari ◽  
Changhong Chen ◽  
A. A. Bernussi ◽  
Z. Y. Fan ◽  
M. Holtz
Keyword(s):  
Phase Transition ◽  
Carrier Concentration ◽  
Free Carrier ◽  
Free Carrier Concentration ◽  
Vibrational Properties
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