scholarly journals Size effects on the Mechanical Behavior of Nanometric W/Cu Multilayers

2008 ◽  
Vol 1086 ◽  
Author(s):  
Baptiste Girault ◽  
Guillaume Geandier ◽  
Dominique Eyidi ◽  
Pierre-Olivier Renault ◽  
Eric Le Bourhis ◽  
...  
Keyword(s):  
Mechanical Behavior ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Elastic Response ◽  
Elastic Behavior ◽  
Polycrystalline Materials ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Voronoi Method ◽  
The One

AbstractThe mechanical behavior of nanostructured stratified W/Cu composites prepared by ion beam sputtering has been investigated using a method combining X-ray diffraction and tensile testing. Tests were performed on a synchrotron light source to analyze the elastic response of the tungsten phase. Three different microstructures have been analyzed: the specimen composed of the thinner tungsten layers reveals an elastic behavior different from the one expected assuming bulk elastic constants. However, Transmission Electron Microscopy (TEM) and Grazing-Incidence Small-Angle X-ray Scattering (GISAXS) measurements reveal discontinuities in the copper layers. As the strain in the related copper clusters as well grains boundary contributions are not experimentally accessible, atomistic calculation are of utmost importance. Polycrystalline materials have already been constructed through the Voronoï method and thanks to TEM observations. Atomistic simulation and calculation are underway to validation.

Characterizing Surfaces and Overlying Multilayer Structures Using Grazing Incidence X-Ray Reflectivity

1995 ◽  
Vol 403 ◽  
Author(s):  
Joseph Pedulla ◽  
Richard D. Deslates ◽  
Karsten D. Joensen ◽  
Paul Gorenstein
Keyword(s):  
Ion Beam ◽  
Grazing Incidence ◽  
Fused Silica ◽  
Interface Roughness ◽  
Multilayer Structures ◽  
Ion Beam Sputtering ◽  
Model Calculations ◽  
X Ray ◽  
Beam Sputtering ◽  
Diffuse Reflectivity

AbstractA proposed hard x-ray (>10 keV) telescope design uses multilayers on gold coated replica substrates. We investigated the grazing incidence x-ray reflectivity (0.154 nm) of super polished fused silica, gold coated fused silica, and mutilayers deposited on each. Gold coatings of 100 nm were deposited by both magnetron sputtering and ion beam sputtering. Carbon/nickel multilayers (20 layer pair with 4.0 nm d-spacing) were deposited by ion beam sputtering. We report the results of specular and diffuse reflectivity characterizations of these samples. The easured x-ray reflectivities are compared to model calculations evaluating film thickness, ensity, optical properties, and interface roughness/diffusion. It is concluded that substrate and film quality (roughness and density) can be determined by grazing incidence reflectivity measurements and correlated to final multilayer reflectivity and model calculations.

Grazing incidence small-angle x-ray scattering applied to the characterization of nanocomposite thin films

2001 ◽  
Vol 678 ◽  
Author(s):  
David Babonneau ◽  
Amelia Suárez-García ◽  
José Gonzalo ◽  
Ivan R. Videnovic ◽  
Michael G. Garnier ◽  
...  
Keyword(s):  
Thin Films ◽  
Small Angle ◽  
Metallic Nanoparticles ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
X Ray Scattering ◽  
Nanocomposite Thin Films ◽  
Ray Scattering

AbstractGrazing incidence small-angle x-ray scattering (GISAXS) allows to investigate precisely the microstructure of nanocomposite thin films containing metal nanocrystals produced using different synthesis techniques. We present results on the size, size distribution, shape, and correlation length of metallic nanoparticles embedded in different matrices fabricated by sequential pulsed laser deposition, magnetron sputtering, and ion-beam sputtering co-deposition. The morphology of the nanoparticles is discussed in terms of the different growth process that takes place in each case.

Thickness-Dependent Structural and Magnetic Study of Co/Si/Co Trilayers Grown by Ion Beam Sputtering

SPIN ◽  
2018 ◽  
Vol 08 (02) ◽  
pp. 1850005 ◽  
Author(s):  
Anil Kumar ◽  
Ranjeet Brajpuriya ◽  
Priti Singh
Keyword(s):  
Magnetic Properties ◽  
Layer Thickness ◽  
Optical Measurement ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Semiconductor Layer ◽  
Magnetic Characteristics ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Silicide Layer

The magnetic properties of the metal/semiconductor structure can be modulated by the semiconductor layer thickness and therefore in the present paper, a series of trilayers of ion beam sputtered Cobalt–Silicon–Cobalt (Co/Si/Co) were grown to study the interface characteristics and their connections with magnetic properties. The thickness of Co layer, [Formula: see text], is fixed to 3[Formula: see text]nm, while varying the thickness of Si sandwich layer, [Formula: see text], from 1.5[Formula: see text]nm to 4[Formula: see text]nm, respectively. Grazing incidence X-ray diffraction (GIXRD), grazing incidence X-ray reflectivity (GIXRR), Atomic Force Microscopy (AFM) and Magneto-Optic Kerr Effect (MOKE) techniques were employed to study the crystal structure, surface and interface structure, morphology and magnetic characteristics of thin films. X-ray reflectivity measurements show substantial intermixing between the layers leading to trilayers of complicated structure at the interface during deposition. At [Formula: see text][Formula: see text]nm, whole Si layer is converted into silicide, whereas at higher spacer layer thickness ([Formula: see text]), in addition to silicide layer, an unreacted elemental layer of Si also remains in the spacer. A magneto-optical measurement reveals the presence of anti-ferromagnetic coupling in these samples and the strength of coupling between Co layers is found to be depended on [Formula: see text].

scholarly journals Micro-structural and bonding structure analysis of TiAlN thin films deposited with varying N2 flow rate via ion beam sputtering technique

2020 ◽  
Vol 38 (1) ◽  
pp. 122-131
Author(s):  
Soham Das ◽  
Mukul Gupta ◽  
Ashis Sharma ◽  
Bibhu P. Swain
Keyword(s):  
Thin Films ◽  
Crystallite Size ◽  
Flow Rate ◽  
Ion Beam ◽  
Grazing Incidence ◽  
Ion Beam Sputtering ◽  
Sem Images ◽  
Edge Structure ◽  
X Ray ◽  
Beam Sputtering

AbstractTitanium aluminum nitride (TiAlN) thin films were deposited on Si(1 0 0 ) substrate using titanium and aluminum targets in 1:1 ratio at various N2 flow rates using ion beam sputtering (IBS) technique. The morphology, particle and crystallite size of TiAlN thin films were estimated by field emission scanning electron microscope (FE-SEM), atomic force microscope (AFM), and grazing incidence X-ray diffraction (GIXRD) technique, respectively. The SEM images of the TiAlN thin films revealed smooth and uniform coating, whereas AFM images confirmed the particle size varying from 2.5 nm to 8.8 nm, respectively. The crystallite size and lattice strain were observed to vary from 4.79 nm to 5.5 nm and 0.0916 and 0.0844, respectively, with an increase in N2 flow rate in the TiAlN thin films. The X-ray absorption near edge structure (XANES) results showed Ti L, N K and O K-edges of TiAlN coating within a range of 450 eV to 470 eV, 395 eV to 410 eV and 480 eV to 580 eV photon energy, respectively. The electronic structure and chemical bonding of state of c-TiAlN thin film of Ti L, N K and O K-edges were analyzed through semi-empirical curve fitting technique.

scholarly journals Особенности фазообразования и электронного строения в пленочных композитах Al-=SUB=-1-x-=/SUB=-Si-=SUB=-x-=/SUB=- при магнетронном и ионно-лучевом напылении

2018 ◽  
Vol 60 (5) ◽  
pp. 1005
Author(s):  
В.А. Терехов ◽  
Д.С. Усольцева ◽  
О.В. Сербин ◽  
И.Е. Занин ◽  
Т.В. Куликова ◽  
...  
Keyword(s):  
Solid Solution ◽  
Silicon Nanocrystals ◽  
Ion Beam ◽  
Composite Films ◽  
Photon Radiation ◽  
Ion Beam Sputtering ◽  
Composite Target ◽  
X Ray ◽  
Beam Sputtering ◽  
Cubic System

AbstractThe peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al_0.75Si_0.25 composition obtained by the magnetron and ion-beam sputtering methods on a Si(100) silicon substrate are studied using the X-ray diffraction techniques and ultrasoft X-ray emission spectroscopy. In addition to silicon nanocrystals of about 25 nm in size, an ordered solid solution corresponding to the previously unknown Al_3Si phase is formed in magnetron sputtering on a polycrystalline Al matrix. Films obtained by ion-beam sputtering of the composite target are found to be monophasic and contained only one phase of an ordered solid solution of aluminum silicide Al_3Si of the Pm3m cubic system with the primitive cell parameter a = 4.085 Å. However, subsequent pulsed photon annealing of the composite with different radiation doses from 145 to 216 J/cm^2 gives rise to the partial decomposition of the Al_3Si phase with the formation of free metallic aluminum and silicon nanocrystals with sizes in the range from 50 to 100 nm, depending on the pulsed photon radiation dose.

X-ray scattering study of interfacial roughness correlation in Mo/Si multilayers fabricated by ion beam sputtering

2000 ◽  
Vol 87 (10) ◽  
pp. 7255-7260 ◽  
Author(s):  
A. Ulyanenkov ◽  
R. Matsuo ◽  
K. Omote ◽  
K. Inaba ◽  
J. Harada ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Interfacial Roughness ◽  
X Ray ◽  
X Ray Scattering ◽  
Beam Sputtering ◽  
Scattering Study ◽  
Ray Scattering

Relationship Between Microstructure and Hardness of ZrN/TiN Multi-Layers with Various Bilayer Thicknesses

2010 ◽  
Vol 63 ◽  
pp. 392-395
Author(s):  
Yoshifumi Aoi ◽  
Satoru Furuhata ◽  
Hiromi Nakano
Keyword(s):  
Mechanical Property ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Microstructure And Mechanical Property

ZrN/TiN multi-layers were synthesized by ion beam sputtering technique. Microstructure and mechanical property of the ZrN/TiN multi-layers were characterized and the relationships between microstructure and hardness of the ZrN/TiN multi-layers with various bilayer thicknesses and thickness ratios were investigated. The microstructure of multi-layers have been investigated using transmission electron microscope (TEM) and X-ray diffraction (XRD).

scholarly journals High-throughput investigation of crystal-to-glass transformation of Ti–Ni–Cu ternary alloy

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jian Hui ◽  
Haiqian Ma ◽  
Zheyu Wu ◽  
Zhan Zhang ◽  
Yang Ren ◽  
...  
Keyword(s):  
Glass Transition ◽  
Solid State ◽  
High Throughput ◽  
Solid State Reaction ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Layer Sequence ◽  
Before And After ◽  
Key Factor

AbstractA high-throughput investigation of metallic glass formation via solid-state reaction was reported in this paper. Combinatorial multilayered thin-film chips covering the entire Ti–Ni–Cu ternary system were prepared using ion beam sputtering technique. Microbeam synchrotron X-ray diffraction (XRD) and X-ray fluorescence (XRF) measurements were conducted, with 1,325 data points collected from each chip, to map out the composition and the phase constitution before and after annealing at 373 K for 110 hours. The composition dependence of the crystal-to-glass transition by solid-state reaction was surveyed using this approach. The resulting composition–phase map is consistent with previously reported results. Time-of-flight secondary ion mass spectroscopy (ToF-SIMS) was performed on the representative compositions to determine the inter-diffusion between layers, the result shows that the diffusion of Ti is the key factor for the crystal-to-glass transition. In addition, both layer thickness and layer sequence play important roles as well. This work demonstrates that combinatorial chip technique is an efficient way for systematic and rapid study of crystal-to-glass transition for multi-component alloy systems.

MODULATION WAVELENGTH DEPENDENCE OF THE INTERDIFFUSION IN AMORPHOUS Si/Ge MULTILAYER FILMS

1985 ◽  
Vol 56 ◽  
Author(s):  
S.M. PROKES ◽  
F. SPAEPEN
Keyword(s):  
Ion Beam ◽  
Wavelength Dependence ◽  
Dangling Bond ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Beam Sputtering ◽  
Amorphous Si ◽  
Effect Of Copper ◽  
Oxygen Impurities ◽  
Modulation Wavelength

AbstractCompositionally modulated amorphous Si/Ge thin films with repeat lengths (wavelengths) between 4.8 nm and 5.83 nm have been prepared using ion beam sputtering. The interdiffusion coefficient was determined from the decrease in the (000) x-ray satellite intensities with annealing, and was found to be relatively large, so that it could easily be measured without crystallization occurring. The effect of copper and oxygen impurities was found to be negligible. The dependence of the interdiffusivity on the modulation wavelength is similar to that of an ordering system. The temperature and wavelength dependence in the range T = 550-630 K is described by Dλ = 1.47×10−10 m.s−1 exp(-l.6 eV/kT)(l-21.8/λ2(nm)). It is suggested that diffusion is governed by the breaking of one bond near a pre-existing dangling bond.

scholarly journals Study of XUV beam splitter flatness for use on a Michelson interferometer

2004 ◽  
Vol 22 (3) ◽  
pp. 279-284 ◽  
Author(s):  
ANNE-SOPHIE MORLENS ◽  
PHILIPPE ZEITOUN ◽  
LAURENT VANBOSTAL ◽  
PASCAL MERCERE ◽  
GRÉGORY FAIVRE ◽  
...  
Keyword(s):  
Beam Splitter ◽  
Ion Beam ◽  
Michelson Interferometer ◽  
Fourier Transform Spectrometer ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Interference Fringes ◽  
Beam Sputtering ◽  
20 Nm ◽  
Better Than

A XUV Michelson interferometer has been developed by LIXAM/CEA/LCFIO and has been tested as a Fourier-transform spectrometer for measurement of X-ray laser line shape. The observed strong deformation of the interference fringes limited the interest of such an interferometer for plasma probing. Because the fringe deformation was coming from a distortion of the beam splitter (5 × 5 mm2open aperture, about 150 nm thick), several parameters of the multilayer deposition used for the beam splitter fabrication have been recently optimized. The flatness has been improved from 80 nm rms obtained by using the ion beam sputtering technique, to 20 nm rms by using the magnetron sputtering technique. Over 3 × 3 mm2, the beam splitter has a flatness better than 4 nm rms.

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