MODULATION WAVELENGTH DEPENDENCE OF THE INTERDIFFUSION IN AMORPHOUS Si/Ge MULTILAYER FILMS

1985 ◽  
Vol 56 ◽  
Author(s):  
S.M. PROKES ◽  
F. SPAEPEN
Keyword(s):  
Ion Beam ◽  
Wavelength Dependence ◽  
Dangling Bond ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Beam Sputtering ◽  
Amorphous Si ◽  
Effect Of Copper ◽  
Oxygen Impurities ◽  
Modulation Wavelength

AbstractCompositionally modulated amorphous Si/Ge thin films with repeat lengths (wavelengths) between 4.8 nm and 5.83 nm have been prepared using ion beam sputtering. The interdiffusion coefficient was determined from the decrease in the (000) x-ray satellite intensities with annealing, and was found to be relatively large, so that it could easily be measured without crystallization occurring. The effect of copper and oxygen impurities was found to be negligible. The dependence of the interdiffusivity on the modulation wavelength is similar to that of an ordering system. The temperature and wavelength dependence in the range T = 550-630 K is described by Dλ = 1.47×10−10 m.s−1 exp(-l.6 eV/kT)(l-21.8/λ2(nm)). It is suggested that diffusion is governed by the breaking of one bond near a pre-existing dangling bond.

The Effect of Self-Implantation on the Interdiffusion in Amorphous Si/Ge Multilayers

1986 ◽  
Vol 74 ◽  
Author(s):  
B. Park ◽  
F. Spaepen ◽  
J. M. Poate ◽  
D. C. Jacobson
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
Average Composition ◽  
X Ray ◽  
Composition Modulation ◽  
Beam Sputtering ◽  
Mixing Distance ◽  
Diffraction Peaks ◽  
Amorphous Si

AbstractArtificial amorphous Si/Ge multilayers of equiatomic average composition with a repeat length around 60 Å have been prepared by ion beam sputtering. Implantation with 29Si led to a decrease in the intensity of the X-ray diffraction peaks arising from the composition modulation, which could be used for an accurate measurement of the implantation-induced mixing distance. Subsequent annealing showed no difference between the interdiffusivity in an implanted and unimplanted sample.

scholarly journals Особенности фазообразования и электронного строения в пленочных композитах Al-=SUB=-1-x-=/SUB=-Si-=SUB=-x-=/SUB=- при магнетронном и ионно-лучевом напылении

2018 ◽  
Vol 60 (5) ◽  
pp. 1005
Author(s):  
В.А. Терехов ◽  
Д.С. Усольцева ◽  
О.В. Сербин ◽  
И.Е. Занин ◽  
Т.В. Куликова ◽  
...  
Keyword(s):  
Solid Solution ◽  
Silicon Nanocrystals ◽  
Ion Beam ◽  
Composite Films ◽  
Photon Radiation ◽  
Ion Beam Sputtering ◽  
Composite Target ◽  
X Ray ◽  
Beam Sputtering ◽  
Cubic System

AbstractThe peculiarities of the phase composition and electronic structure of aluminum–silicon composite films near the Al_0.75Si_0.25 composition obtained by the magnetron and ion-beam sputtering methods on a Si(100) silicon substrate are studied using the X-ray diffraction techniques and ultrasoft X-ray emission spectroscopy. In addition to silicon nanocrystals of about 25 nm in size, an ordered solid solution corresponding to the previously unknown Al_3Si phase is formed in magnetron sputtering on a polycrystalline Al matrix. Films obtained by ion-beam sputtering of the composite target are found to be monophasic and contained only one phase of an ordered solid solution of aluminum silicide Al_3Si of the Pm3m cubic system with the primitive cell parameter a = 4.085 Å. However, subsequent pulsed photon annealing of the composite with different radiation doses from 145 to 216 J/cm^2 gives rise to the partial decomposition of the Al_3Si phase with the formation of free metallic aluminum and silicon nanocrystals with sizes in the range from 50 to 100 nm, depending on the pulsed photon radiation dose.

X-ray scattering study of interfacial roughness correlation in Mo/Si multilayers fabricated by ion beam sputtering

2000 ◽  
Vol 87 (10) ◽  
pp. 7255-7260 ◽  
Author(s):  
A. Ulyanenkov ◽  
R. Matsuo ◽  
K. Omote ◽  
K. Inaba ◽  
J. Harada ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Interfacial Roughness ◽  
X Ray ◽  
X Ray Scattering ◽  
Beam Sputtering ◽  
Scattering Study ◽  
Ray Scattering

Relationship Between Microstructure and Hardness of ZrN/TiN Multi-Layers with Various Bilayer Thicknesses

2010 ◽  
Vol 63 ◽  
pp. 392-395
Author(s):  
Yoshifumi Aoi ◽  
Satoru Furuhata ◽  
Hiromi Nakano
Keyword(s):  
Mechanical Property ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Microstructure And Mechanical Property

ZrN/TiN multi-layers were synthesized by ion beam sputtering technique. Microstructure and mechanical property of the ZrN/TiN multi-layers were characterized and the relationships between microstructure and hardness of the ZrN/TiN multi-layers with various bilayer thicknesses and thickness ratios were investigated. The microstructure of multi-layers have been investigated using transmission electron microscope (TEM) and X-ray diffraction (XRD).

Magnetic and Structural Characteristics of Multi-layered Films Composed of Fe and Si Ultra-thin Layers

1991 ◽  
Vol 231 ◽  
Author(s):  
K. Kubota ◽  
M. Nagakubo ◽  
M. Naoe
Keyword(s):  
Structural Characteristics ◽  
Ion Beam ◽  
Thin Layers ◽  
Soft Magnetic Properties ◽  
Ion Beam Sputtering ◽  
Soft Magnetic ◽  
Magnetostatic Interaction ◽  
Beam Sputtering ◽  
Amorphous Si ◽  
The Relationship

AbstractFe and Si layers were deposited alternately by using ion beam sputtering apparatus and the relationship between crystal structure and soft magnetic properties of these multi-layered films have been investigated in detail. The clear periodicity of multi-layered films was confirmed even at the thicknesses of Fe and Si layers δFe and δSi as small as 8.5 Å.The saturation magnetization 4πMs for all Fe layers decreased with decrease of δFe and δSi, and the coercivity Hc of these films took minimum of 1.0 Oe at δFe of 8.5 Å.Such a significant decrease of 4TEMs may be attributed to the formation of nonmagnetic regions at both side of each Fe layers. The thickness of these nonmagnetic regions may be estimated at approximately 1.5 Å from the measured value of 4flMs. This thickness seems to be very small because it is almost equal to that of one monolayer of bcc α-Fe. The low Hc of the films with δFe and δSi of 8.5 Å may be due to the formation of ultra-fine crystallites in Fe layer by insertion of amorphous Si layer and the direct magnetostatic interaction among Fe layers.

scholarly journals Study of XUV beam splitter flatness for use on a Michelson interferometer

2004 ◽  
Vol 22 (3) ◽  
pp. 279-284 ◽  
Author(s):  
ANNE-SOPHIE MORLENS ◽  
PHILIPPE ZEITOUN ◽  
LAURENT VANBOSTAL ◽  
PASCAL MERCERE ◽  
GRÉGORY FAIVRE ◽  
...  
Keyword(s):  
Beam Splitter ◽  
Ion Beam ◽  
Michelson Interferometer ◽  
Fourier Transform Spectrometer ◽  
Ion Beam Sputtering ◽  
X Ray ◽  
Interference Fringes ◽  
Beam Sputtering ◽  
20 Nm ◽  
Better Than

A XUV Michelson interferometer has been developed by LIXAM/CEA/LCFIO and has been tested as a Fourier-transform spectrometer for measurement of X-ray laser line shape. The observed strong deformation of the interference fringes limited the interest of such an interferometer for plasma probing. Because the fringe deformation was coming from a distortion of the beam splitter (5 × 5 mm2open aperture, about 150 nm thick), several parameters of the multilayer deposition used for the beam splitter fabrication have been recently optimized. The flatness has been improved from 80 nm rms obtained by using the ion beam sputtering technique, to 20 nm rms by using the magnetron sputtering technique. Over 3 × 3 mm2, the beam splitter has a flatness better than 4 nm rms.

Electrical Properties of Oxygenated Amorphous Si Prepared by Ion-Beam Sputtering

1979 ◽  
Vol 18 (7) ◽  
pp. 1395-1396 ◽  
Author(s):  
Kiyoshi Ishii ◽  
Masahiko Naoe ◽  
Shun'ichi Yamanaka ◽  
Shuichi Okano ◽  
Masakuni Suzuki
Keyword(s):  
Electrical Properties ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Amorphous Si

Adhesion of Copper to Polytetrafluoroethylene

1989 ◽  
Vol 153 ◽  
Author(s):  
Yong-Kil Kim ◽  
Chin-An Chang ◽  
A.G. Schrott ◽  
J. Andreshak ◽  
M. Cali
Keyword(s):  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Peel Test ◽  
Peel Strength ◽  
Interface Morphology ◽  
Ion Beam Sputtering ◽  
Polymer Substrates ◽  
X Ray ◽  
Beam Sputtering ◽  
Scanning Electron

AbstractAn enhancement of the adhesion between copper and polytetrafluoroethylene (PTFE) has been studied. Thin-films of copper were electron-beam deposited on the surface of the polymer substrates. Peel test measurements showed that, without any treatment of the substrates, the adhesion was poor with a peel strength of 1-2 g/mm. A pronounced enhancement of the adhesion has been obtained when the fluorocarbon substrates were treated by either an ultraviolet (UV) irradiation, an ion-beam presputtering prior to the metal deposition, or heat treatments after the deposition. Among the treatments employed, the ion-beam sputtering was the most effective in improving the adhesion. The roles of the treatments and possible reasons for the enhanced adhesion are discussed in conjunction with the studies of interface morphology and chemistry using Scanning Electron Microscopy, Rutherford Backscattering Spectroscopy, and X-ray Photoelectron Spectroscopy.

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