Effect of Thermal Annealing on Characteristics of Polycrystalline Silicon used for Solar Cells

2008 ◽  
Author(s):  
Gou XianFang ◽  
li xudong ◽  
xu ying ◽  
liang xinqing
1981 ◽  
Vol 4 ◽  
Author(s):  
Anton C. Greenwald ◽  
Roger G. Little ◽  
Mark B. Spitzer ◽  
Robert G. Wolfson

ABSTRACTContinued study [1] of pulsed electron beam annealing (PEBA) of thin silicon films deposited by LPCVD on silicon substrates has shown that a thin SiO2 interface remains intact during melt. PEBA of ion-implant damage in silicon has been shown to correlate dopant activation with melt depth. Also, PEBA was superior to thermal annealing of ion-implant damage in processing solar cells in some types of polycrystalline silicon material.


ChemPlusChem ◽  
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Valentino Romano ◽  
Leyla Najafi ◽  
Albertus Sutanto ◽  
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Valentin Queloz ◽  
...  

2012 ◽  
Vol 21 (6) ◽  
pp. 1377-1383 ◽  
Author(s):  
Jonathon Dore ◽  
Rhett Evans ◽  
Ute Schubert ◽  
Bonne D. Eggleston ◽  
Daniel Ong ◽  
...  

2007 ◽  
Vol 142 (3) ◽  
pp. 181-184 ◽  
Author(s):  
Hui Jin ◽  
Yanbing Hou ◽  
Xianguo Meng ◽  
Yan Li ◽  
Quanmin Shi ◽  
...  

2012 ◽  
Vol 111 (3) ◽  
pp. 935-942 ◽  
Author(s):  
Hongtao Cui ◽  
Patrick R. Campbell ◽  
Martin A. Green

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