Pulsed Electron Beam Processing of Silicon
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ABSTRACTContinued study [1] of pulsed electron beam annealing (PEBA) of thin silicon films deposited by LPCVD on silicon substrates has shown that a thin SiO2 interface remains intact during melt. PEBA of ion-implant damage in silicon has been shown to correlate dopant activation with melt depth. Also, PEBA was superior to thermal annealing of ion-implant damage in processing solar cells in some types of polycrystalline silicon material.
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2016 ◽
Vol 683
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pp. 95-99
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2013 ◽
Vol 24
(11)
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pp. 4209-4212
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2003 ◽
Vol 21
(6)
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pp. 1934-1938
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