Pulsed Electron Beam Processing of Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
Anton C. Greenwald ◽  
Roger G. Little ◽  
Mark B. Spitzer ◽  
Robert G. Wolfson

ABSTRACTContinued study [1] of pulsed electron beam annealing (PEBA) of thin silicon films deposited by LPCVD on silicon substrates has shown that a thin SiO2 interface remains intact during melt. PEBA of ion-implant damage in silicon has been shown to correlate dopant activation with melt depth. Also, PEBA was superior to thermal annealing of ion-implant damage in processing solar cells in some types of polycrystalline silicon material.

2003 ◽  
Vol 150 (4) ◽  
pp. 293 ◽  
Author(s):  
R. Bilyalov ◽  
J. Poortmans ◽  
R. Sharafutdinov ◽  
S. Khmel ◽  
V. Schukin ◽  
...  

2008 ◽  
Author(s):  
Gou XianFang ◽  
li xudong ◽  
xu ying ◽  
liang xinqing

1989 ◽  
Author(s):  
J. Krishnaswamy ◽  
G. J. Collins ◽  
H. Hiraoka

2016 ◽  
Vol 683 ◽  
pp. 95-99 ◽  
Author(s):  
Victor Burdovitsin ◽  
Andrey Kazakov ◽  
Alexandr Medovnik ◽  
Efim Oks ◽  
Irina Puhova ◽  
...  

Influence of electron beam irradiation on the morphology and contact angle of polypropylene was investigated. Electron beam processing was carried out at 8 – 10 kV accelerating voltage and a pressure of 5 – 10 Pa. Beam current density was up to 4.5 A/cm2, and the pulse duration - from 150 to 300 μs. The morphology of irradiated polymer material was studied by scanning-electron and atomic-force microscopy methods. It was established formation of extended equally oriented “hills” divided by “valleys”. The height of hills increases with the growth of energy flux density per pulse.


2001 ◽  
Vol 401 (1-2) ◽  
pp. 84-87 ◽  
Author(s):  
M Rostalsky ◽  
J Müller

2003 ◽  
Vol 21 (6) ◽  
pp. 1934-1938 ◽  
Author(s):  
Ying Qin ◽  
Chuang Dong ◽  
Xiaogang Wang ◽  
Shengzhi Hao ◽  
Aimin Wu ◽  
...  

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