Ion and Electron Spectroscopy During Pulsed Laser Irradiation of Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
J.P. Long ◽  
R.T. Williams ◽  
T.R. Royt ◽  
J.C. Rife ◽  
M.N. Kabler
Keyword(s):  
Alkali Metals ◽  
Laser Annealing ◽  
Thermal Evaporation ◽  
Pulsed Laser ◽  
Silicon Surfaces ◽  
Energy Distributions ◽  
Electrons And Ions ◽  
Ion Emission ◽  
Positive Ion ◽  
Pulsed Laser Irradiation

ABSTRACTIon mass spectrometry, charged particle yields, and kinetic energy distributions of electrons and ions are used to characterize silicon wafers and vacuum-cleaved silicon surfaces under conditions related to laser annealing. We find that alkali metals dominate the positive ion emission from chemically-cleaned wafers, a mass-72 peak tentatively identified as Si2O+ comprises the main ion emission from the cleaved surface, and ion and electron temperatures can be derived from the energy distribution curves although the Si2O+ emission implies more than a simple thermal evaporation process.

Electron Energy Distributions During Pulsed Laser Annealing and Damage of Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
R. T. Williams ◽  
M. N. Kabler ◽  
J. P. Long ◽  
J. C. Rife ◽  
T. R. Royt
Keyword(s):  
Energy Resolution ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Energy Distributions ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Cylindrical Mirror ◽  
Molten Phase ◽  
532 Nm ◽  
Pulsed Laser Irradiation

ABSTRACTSpectra of photoelectrons and thermionic electrons emitted from silicon during pulsed laser irradiation at energy densities encompassing the thresholds for laser annealing and damage are reported. Annealing is accomplished with a 90-nsec pulse of 532-nm light, which may be accompanied by a 266-nm probe pulse. A cylindrical mirror analyzer is used for energy resolution of emitted electrons. Time-resolved reflectivity at 633 nm verifies attainment of the high-reflectivity annealing phase. Spectral widths and total yields imply a modest electron temperature (T < 3000 K) during annealing. The data suggest that the work function of the silicon (111) face may increase about 0.6 eV upon transition to the molten phase.

Pulsed Laser Processing of Electrodeposited CuInSe2 Photovoltaic Absorber Thin Films

2010 ◽  
Vol 1268 ◽  
Author(s):  
Ashish Bhatia ◽  
Phillip Dale ◽  
Matt Nowell ◽  
Michael Scarpulla
Keyword(s):  
Thin Films ◽  
Electrochemical Deposition ◽  
Laser Processing ◽  
Laser Annealing ◽  
Thermal Evaporation ◽  
Pulsed Laser ◽  
Ultra Violet ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
The Cost

AbstractCuInSe2 (CIS) is commercially processed using energy intensive vacuum processes such as sputtering and thermal evaporation followed by thermal annealing. In order to reduce the cost of fabricating CIS photovoltaic absorber layers we need fast and cheap processing methods. We have investigated the use of non-vacuum electrochemical deposition (ED) followed by ultra violet pulsed laser annealing (UV-PLA). We report here on the results of ns pulsed KrF irradiation of ED CIS films and ED CIS films which were first annealed in a Se atmosphere.

Annihilation of nonradiative defects on hydrogenated silicon surfaces under pulsed-laser irradiation

2000 ◽  
Vol 77 (19) ◽  
pp. 3006-3008 ◽  
Author(s):  
V. Yu. Timoshenko ◽  
Th. Dittrich ◽  
F. Koch ◽  
B. V. Kamenev ◽  
J. Rappich
Keyword(s):  
Laser Irradiation ◽  
Pulsed Laser ◽  
Silicon Surfaces ◽  
Hydrogenated Silicon ◽  
Pulsed Laser Irradiation

Preparation of atomically clean silicon surfaces by pulsed laser irradiation

1980 ◽  
Vol 36 (1) ◽  
pp. 56-59 ◽  
Author(s):  
D. M. Zehner ◽  
C. W. White ◽  
G. W. Ownby
Keyword(s):  
Laser Irradiation ◽  
Pulsed Laser ◽  
Silicon Surfaces ◽  
Pulsed Laser Irradiation

Melting and Laser Annealing in Semiconductors using 0.485 μm and 0.193 μm Pulsed Lasers

1980 ◽  
Vol 2 ◽  
Author(s):  
J. Narayan ◽  
J. Fletcher ◽  
R. E. Eby
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Convincing Evidence ◽  
Dye Laser ◽  
Pulsed Lasers ◽  
Displacement Damage ◽  
Melting Phenomenon ◽  
Pulsed Laser Irradiation

ABSTRACTAnnealing of displacement damage, the dissolution of boron precipitates, the formation of constitution supercooling cells, and the broadening of dopant profiles have been studied in laser annealed silicon. These samples were irradiated with a dye laser (λ = 0.485 µm, τ = 9 ns, E = 0.7–1.2 J cm−2) and an Excimer laser (λ = 0.193 µm, τ= 9 ns, E = 0.5–0.7 J cm−2) pulses. These results can be consistently interpreted by invoking melting during pulsed laser irradiation. Thus these results provide convincing evidence for the melting phenomenon.

NUCLEATION KINETICS OF CdTe/CdTe (111) HOMOEPITAXY BY LASER MBE

1985 ◽  
Vol 56 ◽  
Author(s):  
J.T. Cheung
Keyword(s):  
Epitaxial Growth ◽  
Laser Irradiation ◽  
High Power ◽  
Thermal Evaporation ◽  
Pulsed Laser ◽  
Sticking Coefficient ◽  
Nucleation Kinetics ◽  
Laser Mbe ◽  
Kinetics Of ◽  
Pulsed Laser Irradiation

AbstractCdTe evaporates into Cd and Te atoms under high power, pulsed laser irradiation. The mechanism is different from thermal evaporation where only atomic Cd and molecular Te are formed. The presence of Te atoms is responsible for some unique nucleation processes, such as the epitaxial growth of CdTe on (111) CdTe substrates with either polarity and the enhancement in sticking coefficient in CdTe deposition.

Pulsed Laser Annealing of Zirconia Capped, Native Oxides Free GaAs Surfaces

1983 ◽  
Vol 23 ◽  
Author(s):  
D. Pribat ◽  
L.M. Mercandalli ◽  
M. Croset ◽  
J. Siejka
Keyword(s):  
Laser Irradiation ◽  
Laser Annealing ◽  
Defect Density ◽  
Pulsed Laser ◽  
Native Oxide ◽  
Thermally Activated ◽  
Native Oxides ◽  
Pulsed Laser Annealing ◽  
Gaas Substrates ◽  
Pulsed Laser Irradiation

ABSTRACTWe have studied the effects of pulsed laser irradiation on silicon implanted, thermally activated , Calcia Stabilized Zirconia (CSZ) capped GaAs substrates. Reference substrates have also been irradiated in air for comparison. CSZ as a solid electrolyte has been used to chemically reduce the GaAs surface native oxides prior to irradiation while maintaining the surface stoechiometry. Our results indicate a spectacular decrease in defect density after laser irradiation of the CSZ capped-native oxide free samples, as compared to the samples irradiated in air.

Amorphous Phase Trapping as a Result of Pulsed Laser Irradiation of Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
R. F. Wood
Keyword(s):  
Phase Transition ◽  
Laser Irradiation ◽  
Amorphous Phase ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Rate Model ◽  
Kinetic Rate ◽  
Pulsed Laser Annealing ◽  
Thermodynamic Effect ◽  
Pulsed Laser Irradiation

ABSTRACTIt is concluded that large interface undercoolings of ˜ 300 deg are not likely to occur during pulsed laser annealing and that the observed liquid to amorphous phase transition is not a purely thermodynamic effect. It is then shown that the formation of the amorphous phase can be understood on the basis of a kinetic rate model which makes large undercoolings of the interface unnecessary.

Stress Effects on Raman Measurements of Pulsed Laser Annealed Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
G. E. Jellison ◽  
R. F. Wood
Keyword(s):  
Raman Scattering ◽  
Laser Irradiation ◽  
Laser Annealing ◽  
Phonon Frequency ◽  
Pulsed Laser ◽  
Front Surface ◽  
Surface Region ◽  
Pulsed Laser Annealing ◽  
Anti Stokes ◽  
Pulsed Laser Irradiation

ABSTRACTIt has recently been shown that the front surface region of the silicon lattice is severely strained during pulsed laser irradiation. This uniaxial strain reduces the symmetry of the front surface region, resulting in additional shifts and splittings of the phonon frequency and changes in the Raman scattering tensor. It is shown that, for the case of pulsed laser irradiation, the phonon frequency is increased, and the 3-fold degenerate optical phonon is split into a singlet and a doublet. The changes in the Raman scattering tensor make it non-symmetric, and generally invalidate the technique used by Compaan et al. to determine the cross section experimentally. The complications introduced by the presence of stress during pulsed laser annealing, coupled with the temperature dependence of the optical and Raman tensors, make a simple interpretation of the Stokes to anti-Stokes ratio in terms of lattice temperature extremely unreliable.

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