Electron Energy Distributions During Pulsed Laser Annealing and Damage of Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
R. T. Williams ◽  
M. N. Kabler ◽  
J. P. Long ◽  
J. C. Rife ◽  
T. R. Royt
Keyword(s):  
Energy Resolution ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Energy Distributions ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Cylindrical Mirror ◽  
Molten Phase ◽  
532 Nm ◽  
Pulsed Laser Irradiation

ABSTRACTSpectra of photoelectrons and thermionic electrons emitted from silicon during pulsed laser irradiation at energy densities encompassing the thresholds for laser annealing and damage are reported. Annealing is accomplished with a 90-nsec pulse of 532-nm light, which may be accompanied by a 266-nm probe pulse. A cylindrical mirror analyzer is used for energy resolution of emitted electrons. Time-resolved reflectivity at 633 nm verifies attainment of the high-reflectivity annealing phase. Spectral widths and total yields imply a modest electron temperature (T < 3000 K) during annealing. The data suggest that the work function of the silicon (111) face may increase about 0.6 eV upon transition to the molten phase.

Synchrotron X-Ray Study of the Structure of Silicon During Pulsed Laser Processing

1981 ◽  
Vol 4 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. Mills
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Temperature Profiles ◽  
X Ray Diffraction ◽  
Time Resolved ◽  
Near Surface ◽  
X Ray ◽  
Pulsed Laser Annealing ◽  
Pulsed Laser Processing ◽  
Thermal Melting

ABSTRACTSynchrotron x-ray pulses have been used to make nanosecond resolution time-resolved x-ray diffraction measurements on silicon during pulsed laser annealing. Thermal expansion analysis of near-surface strains during annealing has provided depth dependent temperature profiles indicating >1100°C temperatures and diffraction from boron implanted silicon has shown evidence for near-surface melting. These results are in qualitative agreement with the thermal melting model of laser annealing.

Ion and Electron Spectroscopy During Pulsed Laser Irradiation of Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
J.P. Long ◽  
R.T. Williams ◽  
T.R. Royt ◽  
J.C. Rife ◽  
M.N. Kabler
Keyword(s):  
Alkali Metals ◽  
Laser Annealing ◽  
Thermal Evaporation ◽  
Pulsed Laser ◽  
Silicon Surfaces ◽  
Energy Distributions ◽  
Electrons And Ions ◽  
Ion Emission ◽  
Positive Ion ◽  
Pulsed Laser Irradiation

ABSTRACTIon mass spectrometry, charged particle yields, and kinetic energy distributions of electrons and ions are used to characterize silicon wafers and vacuum-cleaved silicon surfaces under conditions related to laser annealing. We find that alkali metals dominate the positive ion emission from chemically-cleaned wafers, a mass-72 peak tentatively identified as Si2O+ comprises the main ion emission from the cleaved surface, and ion and electron temperatures can be derived from the energy distribution curves although the Si2O+ emission implies more than a simple thermal evaporation process.

Surface Temperatures and Dissociation Loss During the Pulsed Laser Annealing of GaAs

1983 ◽  
Vol 23 ◽  
Author(s):  
John T.A. Pollock ◽  
Alex Rose
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pressure Data ◽  
Incident Laser ◽  
Time Resolved ◽  
Dissociation Pressure ◽  
Pulsed Laser Annealing ◽  
Modelling Studies ◽  
Maximum Temperatures ◽  
Good Agreement

ABSTRACTFrom reported equilibrium partial and total dissociation pressure data for GaAs and melt times derived from reported time resolved reflectivity experiments, estimates have been made of the anticipated rate of As loss. Good agreement was found with experimentally determined As loss. A similar approach using experimentally determined Ga loss data allowed estimates of the maximum temperatures reached during pulsed laser annealing. These temperatures are considerably higher than suggested in thermal modelling studies. The boiling point of Ga gould be exceeded at incident laser energies >0.8 J cm−2.

Time-resolved optical measurement of Si lattice temperature during nanosecond pulsed laser annealing

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 1024-1026 ◽  
Author(s):  
Kouichi Murakami ◽  
Hisayoshi Itoh ◽  
Kōki Takita ◽  
Kohzoh Masuda
Keyword(s):  
Laser Annealing ◽  
Optical Measurement ◽  
Pulsed Laser ◽  
Lattice Temperature ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Nanosecond Pulsed Laser

Time-resolved conductance and reflectance measurements of silicon during pulsed-laser annealing

1983 ◽  
Vol 27 (2) ◽  
pp. 1079-1087 ◽  
Author(s):  
G. J. Galvin ◽  
Michael O. Thompson ◽  
J. W. Mayer ◽  
P. S. Peercy ◽  
R. B. Hammond ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Reflectance Measurements
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