TUNABLE ASYMMETRIC FANO LINESHAPES IN SILICON-BASED MICRORING RESONATORS WITH FEEDBACK

2011 ◽  
Vol 20 (03) ◽  
pp. 357-366 ◽  
Author(s):  
SANTHAD PITAKWONGSAPORN ◽  
SURASAK CHIANGGA
Keyword(s):  
Continuous Wave ◽  
Operating Regime ◽  
Free Carrier ◽  
Photon Absorption ◽  
Microring Resonators ◽  
Free Carrier Absorption ◽  
Coupling Coefficients ◽  
Linear Absorption ◽  
Carrier Absorption ◽  
Silicon Based

We theoretically examine the Fano lineshapes of silicon-based compound microring resonators consisting of a single resonator channel dropping filter linked to a loop as a feedback structure. All possible optical effects for the continuous-wave operating regime, such as linear absorption or scattering, two-photon absorption, free-carrier absorption and dispersion, thermo-optics, are simultaneously considered. We show that sharp Fano resonances can be tuned by variation in the coupling coefficients, length of feedback loop, effective free carrier lifetime and the temperature inside the device. Tunable Fano lineshapes open up opportunities for applications in sensing, computing, and communications.

The Role of Free Carrier Absorption in LADA

2014 ◽  
Author(s):  
Kent Erington ◽  
Dan Bodoh ◽  
Kris Dickson ◽  
George Lange
Keyword(s):  
Integrated Circuit ◽  
Continuous Wave ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Electron Hole Pair ◽  
Carrier Absorption

Abstract Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuit. In this paper, the characterization of continuous wave 1340nm laser induced currents and the LADA failure rate show that a two photon absorption explanation for the LADA effect is not plausible. The following sections confirm the results of a 28nm-node nMOS transistor using a 2.45NA solid immersion lens. The effects of global heating to that of local laser heating are then compared. The paper shows that the LADA response time to approximately 1300nm irradiation is << 100ns. It explains LADA at approximately 1300nm, free carrier absorption in the silicon and in the local silicide layers, and presents selected 1320nm LADA images on 28nm-node devices. Finally, it shows 1064nm LADA images on the same structure that indicate that 1064nm interaction with transistors is related to free carrier absorption, rather than electron-hole pair creation.

scholarly journals Ultrafast Broadband Nonlinear Optical Response in Co-Doped Sb2Se3 Nanofilms at Near-Infrared

2021 ◽  
Vol 8 ◽  
Author(s):  
Di Sun ◽  
Yu Fang ◽  
Xiaoyan Yan ◽  
Wen Shan ◽  
Wenjun Sun ◽  
...  
Keyword(s):  
Nonlinear Optical ◽  
Near Infrared ◽  
Optical Response ◽  
Free Carrier ◽  
Nonlinear Optical Response ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Ultrafast Carrier ◽  
Carrier Absorption ◽  
Co Doped

Transition metal-doped Sb2Se3 has become a heated topic caused by the strong nonlinear optical response and the ultrafast response time at high laser excitation. In this paper, the Co-doped Sb2Se3 with different doping amount (0.5, 1.0, and 1.5 W) nanofilms were prepared by magnetron sputtering technology, and the nonlinear behavior of Co-doped Sb2Se3 nanofilms at near infrared were systematically studied. The results of the femtosecond Z-Scan experiment indicate that the Co-doped Sb2Se3 nanofilms exhibit broadband nonlinear response properties owing to the free carrier absorption, the Kerr refraction, the two-photon absorption, and the free carrier refraction. The nonlinear absorption coefficients of Co-doped Sb2Se3 nanofilms are from 3.0 × 10−9 to 2.03 × 10−8 m/ W under excitation at 800, 980, and 1,030 nm, and the nonlinear refractive index of the Co-doped Sb2Se3 nanofilms is from 4.0 × 10−16 to -3.89 × 10−15 m2/ W at 800, 980, and 1,030 nm. More importantly, Co-doped Sb2Se3 (1.5 W) nanofilm exhibits ultrafast carrier absorption (<1 ps) and a stronger transient absorption intensity of ΔOD > 6.3. The Co-doping content can controllably tune the crystalline degree, the ultrafast carrier absorption, the intensity of the reverse saturation absorption, the broadband nonlinear optical response, and the carrier relaxation time of Co-doped Sb2Se3 nanofilms. These results are sufficient to support their applications in broadband nonlinear photonic devices.

Free Carrier Absorption in P-Type Epitaxial Si and GaAs Films for far-Infrared Detection

1997 ◽  
Vol 484 ◽  
Author(s):  
A. O. U. Perera ◽  
W. Z. Shen ◽  
M. O. Tanner ◽  
K. L. Wang ◽  
W. Schaff
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Far Infrared ◽  
Infrared Region ◽  
Free Carrier ◽  
Photon Absorption ◽  
Free Carrier Absorption ◽  
Absorption Data ◽  
Carrier Absorption ◽  
P Type

AbstractWe report the investigation of free-carrier absorption characteristics for epitaxially grown p-type thin films in the far-infrared region (50 ∼ 200 μm), where homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si and three GaAs thin films were grown by MBE over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The freehole absorption is found to be almost independent of the wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors. The detector responsivity follows the quantum efficiency predicted by concentration dependence of the free carrier absorption coefficient.

scholarly journals Prospect of CW Raman Laser in Silicon- on- Insulator Nano-Waveguides

2020 ◽  
Vol 18 (45) ◽  
pp. 9-20
Author(s):  
Zainab Salam Khaleefia ◽  
Sh. S. Mahdi ◽  
S. Kh. Yaseen
Keyword(s):  
Communication Systems ◽  
Continuous Wave ◽  
Raman Laser ◽  
Silicon On Insulator ◽  
Photon Absorption ◽  
Lasing Threshold ◽  
Free Carrier Absorption ◽  
Carrier Absorption ◽  
Raman Lasing ◽  
On Chip

Numerical analysis predicts that continuous-wave (CW) Raman lasing is possible in Silicon-On-insulator (SOI) nano-waveguides, despite of presence of free carrier absorption. The scope of this paper lies on lasers for communication systems around 1550 nm wavelength. Two types of waveguide structures Strip and Rib waveguides have been incorporated. The waveguide structures have designed to be 220 nm in height. Three different widths of (350, 450, 1000) nm were studied. The dependence of lasing of the SOI Raman laser on effective carrier lifetime was discussed, produced by tow photon absorption. At telecommunication wavelength of 1550 nm, Raman lasing threshold was calculated to be 1.7 mW in Rib SOI waveguide with dimensions width (W= 450 nm) and Length (L= 25 mm). The obtained Raman lasing is the lowest reported value at relatively high reflectivities. Raman laser in SOI nano-waveguides presents the important step towards integrated on-chip optoelectronic devices.

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