Assessment of Thin Heteroepitaxial Layers Using Skew Angle Asymmetrical X-Ray Double Crystal Diffraction

1988 ◽  
Vol 138 ◽  
Author(s):  
S. J. Miles ◽  
G. S. Green ◽  
B. K. Tanner ◽  
M. A. G. Halliwell ◽  
M. H. Lyons
Keyword(s):  
Skew Angle ◽  
Double Crystal ◽  
X Ray ◽  
Heteroepitaxial Layers

X-Ray Double Crystal Diffractometry of Multiple and Very Thin Heteroepitaxial Layers

1985 ◽  
Vol 29 ◽  
pp. 337-343 ◽  
Author(s):  
B. K. Tanner ◽  
M. J. Hill
Keyword(s):  
Assessment Tool ◽  
Scientific Instruments ◽  
Double Crystal ◽  
X Ray ◽  
Optical Telecommunications ◽  
Quaternary Structures ◽  
Alignment Errors ◽  
Non Destructive ◽  
Heteroepitaxial Layers ◽  
Routine Assessment

The intense interest in production of heteroepitaxial quaternary structures of Gax In1-x Asy p1-y on InP for electro-optical telecommunications systems has Stimulated development of non-destructive techniques for their analysis. One of the most important is double axis X-ray diffractometry, a technique originally developed in the 1920s but only now coming into widespread use as a routine assessment tool. The basic theory is well treated by James and discussion of alignment errors are found in references cited by Fewster in a paper describing alignment procedures for the automated diffractometer manufactured by Bede Scientific Instruments of Durham, The application to III-V systems has been discussed by Tanner, Barnett and Bill.

X-ray double-crystal diffraction studies of CdTe/GaAs heteroepitaxial layers

1990 ◽  
Vol 100 (3) ◽  
pp. 508-514 ◽  
Author(s):  
Ing-Ruey Liaw ◽  
Kan-Sen Chou ◽  
Shih-Lin Chang
Keyword(s):  
Double Crystal ◽  
X Ray ◽  
Heteroepitaxial Layers

Simulation of X-ray double-crystal rocking curves at multiple and inhomogeneous heteroepitaxial layers

1985 ◽  
Vol 18 (6) ◽  
pp. 446-451 ◽  
Author(s):  
M. J. Hill ◽  
B. K. Tanner ◽  
M. A. G. Halliwell ◽  
M. H. Lyons
Keyword(s):  
Structural Parameters ◽  
Lattice Parameter ◽  
Dynamical Theory ◽  
Computational Method ◽  
Theory Approach ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Confining Layers ◽  
Heteroepitaxial Layers

Synchrotron radiation has been used to obtain double-crystal X-ray rocking curves from inhomogeneous layers of GaInAs on InP at a range of wavelengths. The consistency of the lattice-parameter profiles deduced by simulating the rocking curves using the Takagi–Taupin equations is shown to be good. The computational method has been extended to calculate the rocking curves from relatively thick multilayer structures of GaAlAs on GaAs grown by molecular beam epitaxy. This dynamical-theory approach permits the prediction of positions, heights and widths of major and satellite peaks. Results are in excellent agreement with experimental measurements, and by comparing experimental and calculated profiles the structural parameters of the layer can be deduced. The dynamical theory is particularly suitable for calculating the complete rocking curve especially where thick confining layers are present and the computational model is directly applicable to multi-layers with varying layer thicknesses.

A DOUBLE CRYSTAL MONOCHROMATOR FOR SOFT X-RAY BEAM LINE OF UVSOR

1986 ◽  
Vol 47 (C8) ◽  
pp. C8-135-C8-137
Author(s):  
T. MURATA ◽  
T. MATSUKAWA ◽  
M. MORI ◽  
M. OBASHI ◽  
S.-I. NAO-E ◽  
...  
Keyword(s):  
Beam Line ◽  
Double Crystal ◽  
X Ray ◽  
Double Crystal Monochromator

Double Crystal X‐Ray Dilatometer Using Continuous Radiation

1971 ◽  
Vol 42 (2) ◽  
pp. 196-199 ◽  
Author(s):  
Virgil E. Bottom ◽  
Renê Ayres Carvalho
Keyword(s):  
Double Crystal ◽  
X Ray ◽  
Continuous Radiation

Strain Shift Coefficients for Phonons in Si-Ge Heterostructures

1991 ◽  
Vol 239 ◽  
Author(s):  
J.-M. Baribeau ◽  
D. J. Lockwood
Keyword(s):  
Molecular Beam ◽  
Composition Dependence ◽  
Vibration Mode ◽  
Phonon Frequency ◽  
Longitudinal Optical ◽  
Stress Factor ◽  
Double Crystal ◽  
Raman Scattering Spectroscopy ◽  
X Ray ◽  
Shift Coefficient

ABSTRACTStrain shift coefficient measurements for longitudinal optical phonons in molecular beam epitaxy grown metastable pseudomorphic Si1−xGex layers on (100) Si (0 < x < 0.35) and Ge (0.80 < x < 1) are reported. Strain in partially relaxed annealed specimens was obtained by double-crystal x-ray diffractometry and the corresponding strain phonon shift was measured by Raman scattering spectroscopy. For epilayers grown on Si it was found that the epilayer Si-Si phonon frequency varies linearly with strain. The magnitude of the strain shift coefficient b however showed a small composition dependence varying from b ≈ -700 cm-1 at x = 0 to b ≈ -950 cm-1 at x = 0.35, corresponding to a stress factor τ = 0.40 + 0.57x: + 0.13x2 cm-1/kbar. For the Ge-Ge vibration mode in epilayers grown on Ge, b decreased from ∼-425 cm-1 at x = 1 to ∼-500 cm-1 at x = 0.8, corresponding to a stress factor τ ≈ 0.52 – 0.14x - 0.08x2 cm-1/kbar.

Anisotropic Lattice Relaxation and its Mechanism of ZnSe Epilayer Grown on (001) GaAs Substrate by Molecular Beam Epitaxy

1995 ◽  
Vol 399 ◽  
Author(s):  
C.S. Kim ◽  
S.K. Noh ◽  
H.J. Lee ◽  
Y.K. Cho ◽  
Y.I. Kim ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Gaas Substrate ◽  
Molecular Beam ◽  
Rotation Angle ◽  
Lattice Relaxation ◽  
High Dislocation Density ◽  
Sinusoidal Oscillation ◽  
Double Crystal ◽  
X Ray ◽  
Anisotropic Lattice

ABSTRACTWe have investigated anisotropic lattice relaxation and its mechanism of ZnSe epitaxial layer grown on (001) GaAs substrate by MBE. Double-crystal X-ray rocking curves for (004), {115} and {404} reflections were measured as a function of the azimuthal rotation angle of the sample. We observed the sinusoidal oscillation of the FWHM of the epilayer peak for (004) reflections due to the asymmetric dislocation density along two orthogonal <110> directions, and the direction of the maximum FWHM corresponding to high dislocation density is along [110]. In addition, the strain along [110] is smaller than that along [1-10], indicating that the layer suffered anisotropic lattice relaxation. The direction of larger relaxation([l-10]) is not consistent with that of high dislocation density([110]). The results suggest that the asymmetry in dislocation density is not responsible for the anisotropic relaxation of the ZnSe epilayer.

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